IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Parts Per Million Quality Compliant to RoHS Directive 2002/95/EC D TO-220AB DESCRIPTION The technology has expanded its product base to serve the low voltage, very low RDS(on) MOSFET transistor requirements. Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance. In addition to this feature all have documented reliability and parts per million quality! The transistor also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and in systems that are operated from low voltage batteries, such as automotive, portable equipment, etc. G S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFZ20PbF SiHFZ20-E3 IRFZ20 SiHFZ20 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltagea Gate-Source Voltagea Continuous Drain Current Pulsed Drain Currentb Single Pulse Avalanche Energyc Linear Derating Factor (see fig. 16) Maximum Power Dissipation (see fig. 16) Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM EAS TC = 25 °C for 10 s PD TJ, Tstg LIMIT 50 ± 20 15 10 60 5 0.32 40 - 55 to + 150 300 (0.063" (1.6 mm) from case UNIT V A mJ W/°C W °C Notes a. TJ = 25 °C to 150 °C b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11). c. Starting TJ = 25 °C, L = 0.07 mH, Rg = 25 , IAS = 12 A * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 www.vishay.com 1 IRFZ20, SiHFZ20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. 80 Typical Socket Mount, Junction-to-Ambient RthJA - Case-to-Sink, Mounting Surface Flat, Smooth, and Greased RthCS 1.0 - Junction-to-Case RthJC - 3.12 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static VDS VGS = 0 V, ID = 250 μA 50 - - VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 500 nA VDS > Max. Rating, VGS = 0 V - - 250 Zero Gate Voltage Drain Current IDSS VDS = Max. Rating x 0.8, VGS = 0 V, TC = 125 °C - - 1000 Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Current Drain-Source On-State Resistanceb Forward Transconductanceb μA ID(on) VGS = 10 V VDS > ID(on) x RDS(on) max. - - 15 A RDS(on) VGS = 10 V ID = 10 A - 0.080 0.10 S gfs VDS > ID(on) x RDS(on) max., ID = 9.0 A 5.0 6.0 - Input Capacitance Ciss - 560 860 Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 11 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Dynamic Rise Time Turn-Off Delay Time - 250 350 - 60 100 - 12 17 - 9.0 - - 3.0 - td(on) - 15 30 tr - 45 90 - 20 40 - 15 30 - 3.5 - - 4.5 - - - 15 - - 60 - - 1.5 V - 100 - ns - 0.4 - μC td(off) Fall Time tf Internal Drain Inductance LD Internal Source Inductance LS VGS = 10 V ID = 20 A, VDS = 0.8 max. rating, see fig. 18 for test circuit (Gate charge is essentially independent of operating temperature) VDD = 25 V, ID = 9.0 A, Z0 = 50 , see fig. 5b Modified MOSFET symbol showing the internal device inductances D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltageb VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction rectifier D A G S TC = 25 °C, IS = 15 A, VGS = 0 V TJ = 150 °C, IF = 15 A, dIF/dt = 100 A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5). b. Pulse test: Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Saturation Characteristics Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFZ20, SiHFZ20 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration VDS tp VDD VDS IAS Fig. 12a - Clamped Inductive Test Circuit Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFZ20, SiHFZ20 Vishay Siliconix Fig. 13 - Typical Transconductance vs. Drain Current Fig. 14 - Breakdown Voltage vs. Temperature Fig. 16 - Power vs. Temperature Derating Curve Fig. 15 - Typical On-Resistance vs. Drain Current Fig. 17 - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 IRFZ20, SiHFZ20 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91340. Document Number: 91340 S10-1682-Rev. A, 26-Jul-10 www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000