SiHP18N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V • 100 % Avalanche Tested 0.225 76 • High Peak Current Capability Qgs (nC) 21 • dV/dt Ruggedness Qgd (nC) 29 • Improved trr/Qrr Qg (Max.) (nC) Configuration Single • Improved Gate Charge • High Power Dissipations Capability D • Compliant to RoHS Directive 2002/95/EC TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP18N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Currentb Linear Derating Factor IDM TO-220AB Single Pulse Avalanche Energyc Maximum Power Dissipation TO-220AB Peak Diode Recovery dV/dtd Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d ID for 10 s UNIT V 18 11 A 72 1.8 W/°C EAS 361 mJ PD 223 W dV/dt 5 V/ns TJ, Tstg - 55 to + 150 300 °C Notes a. Drain current limited by maximum junction temperature. b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 17 A. d. ISD 18 A, dI/dt 380 A/μs, VDD VDS, TJ 150 °C. e. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91374 S11-0520-Rev. D, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP18N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient TO-220 RthJA - 62 Maximum Junction-to-Case (Drain) TO-220 RthJC - 0.56 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 500 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductancea RDS(on) gfs VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 μA - 0.225 0.270 VDS = 50 V, ID = 10 A - 6.4 - S VGS = 10 V ID = 10 A Dynamic Input Capacitance Ciss VGS = 0 V, - 2451 2942 Output Capacitance Coss VDS = 25 V, - 300 360 Reverse Transfer Capacitance Crss f = 1.0 MHz - 26 32 Internal Gate Resistance Rg f = 1.0 MHz, open drain - 1.1 - Total Gate Charge Qg - 65 76 Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10 V ID = 18 A, VDS = 400 V VDD = 250 V, ID = 18 A Rg = 7.5 , VGS = 10 V tf pF - 21 - - 29 - nC - 80 - - 27 - - 32 - - 44 - - - 18 - - 72 - - 1.5 V - 503 - ns - 6.7 - μC - 30 - A ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 18 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 35 V S Note a. Repetitive rating; pulse width limited by maximum junction temperature. The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. www.vishay.com 2 Document Number: 91374 S11-0520-Rev. D, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP18N50C Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 100 VGS 15 V 60 14 V 13 V 12 V 11 V 50 10 V 9.0 V 8.0 V 40 7.0 V 6.0 V Bottom 5.0 V 30 TJ = 25 °C TJ = 150 °C ID, Drain Current (A) ID, Drain Current (A) Top 20 10 TJ = 25 °C 1 0.1 7.0 V 10 0 0.01 0 6 12 18 24 30 5 TJ = 150 °C ID, Drain Current (A) 7.0 V 10 0 6 12 18 24 30 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91374 S11-0520-Rev. D, 21-Mar-11 RDS(on), Drain-to-Source On Resistance (Normalized) 40 0 8 9 10 Fig. 3 - Typical Transfer Characteristics Fig. 1 - Typical Output Characteristics, TC = 150 °C VGS 15 V 14 V 13 V 12 V 30 11 V 10 V 9.0 V 8.0 V 7.0 V 20 6.0 V Bottom 5.0 V 7 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Top 6 3 2.5 ID = 17 A 2 1.5 VGS = 10 V 1 0.5 0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP18N50C Vishay Siliconix 100 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 104 ISD, Reverse Drain Current (A) Capacitance (pF) 105 Ciss 103 102 Coss 1 10 100 VGS = 0 V 0.1 1000 0.2 0.5 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1.4 103 Operation in this area limited by RDS(on) VDS = 400 V VDS = 250 V VDS = 100 V 102 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 1.1 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = 17 A 16 0.8 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) 20 TJ = 25 °C 1 Crss 10 TJ = 150 °C 10 12 8 10 100 µs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 4 0 10 ms 0.1 0 30 60 90 120 102 10 QG, Total Gate Charge (nC) 103 104 VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area ID, Drain Current (A) 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature www.vishay.com 4 Document Number: 91374 S11-0520-Rev. D, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP18N50C Vishay Siliconix Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-2 10-3 0.1 1 Pulse Time (s) Fig. 10 - Normalized Thermal Transient Impedance, Junction-to-Case VDS RD VDS tp VDD VGS D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 11a - Switching Time Test Circuit QG 10 V VDS 90 % QGS QGD VG 10 % VGS td(on) Charge td(off) tf tr Fig. 13a - Basic Gate Charge Waveform Fig. 11b - Switching Time Waveforms Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ 12 V 0.2 µF 0.3 µF D.U.T RG - IAS + V DD D.U.T. - VDS VGS 10 V tp + 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91374 S11-0520-Rev. D, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP18N50C Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91374. www.vishay.com 6 Document Number: 91374 S11-0520-Rev. D, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-220 FULLPAK (HIGH VOLTAGE) A E A1 ØP n d1 d3 D u L1 V L b3 A2 b2 c b e MILLIMETERS DIM. A A1 A2 b b2 b3 c D d1 d3 E e L L1 n ØP u v ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 MIN. 4.570 2.570 2.510 0.622 1.229 1.229 0.440 8.650 15.88 12.300 10.360 INCHES MAX. 4.830 2.830 2.850 0.890 1.400 1.400 0.629 9.800 16.120 12.920 10.630 MIN. 0.180 0.101 0.099 0.024 0.048 0.048 0.017 0.341 0.622 0.484 0.408 13.730 3.500 6.150 3.450 2.500 0.500 0.520 0.122 0.238 0.120 0.094 0.016 2.54 BSC 13.200 3.100 6.050 3.050 2.400 0.400 MAX. 0.190 0.111 0.112 0.035 0.055 0.055 0.025 0.386 0.635 0.509 0.419 0.100 BSC 0.541 0.138 0.242 0.136 0.098 0.020 Notes 1. To be used only for process drawing. 2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet Cpk > 1.33. 4. All dimensions include burrs and plating thickness. 5. No chipping or package damage. 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