V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Industry-Best trr of 63 ns I INNOVAT AND TEC O L OGY SiHF8N50L-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFET 500 V Low-trr in TO-220 FULLPAK Package KEY BENEFITS • Low trr = 63 ns –– RDS(on) max: 1.0 Ω at VGS = 10 V –– Industry-best trr at 63 ns • Improved EMI results • Improved efficiency • Avoids internal body diode recovery failure • 100 % avalanche tested • Improved gate charge • Improved Trr / Qrr APPLICATIONS • LLC topology • Full-bridge topology • Half-bridge topology • Double-forward topology RESOURCES • • • • Datasheet: SiHF8N50L-E3 - http://www.vishay.com/doc?91387 More featured products: http://www.vishay.com/ref/featuredmosfets For technical questions contact [email protected] Material categorization: For definitions of compliance please see http://www.vishay.com/doc?99912 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0198-1208 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) 10.4 SiHF8N50L-E3 Power MOSFET • Gate Charge Improved • Trr/Qrr Improved Single PRODUCT SUMMARY D G VGS = 10 V FEATURES 34 Qgs (nC) 7.8 Qgd (nC) 10.4 N-Channel MOSFET VGS = 10 V 1 RDS(on) (Ω) Qg (Max.) (nC) G • Gate Charge Improved 7.8 gs Package Qgd (nC) Lead (Pb)-free Configuration TO-220 FULLPAK • Trr/Q rr Improved SiHF8N50L-E3 10.4 Single S G D S N-Channel MOSFET • Compliant to RoHS Directive 2002/95/EC ORDERING INFORMATION D TO-220 FULLPAK ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Package PARAMETER Lead (Pb)-free SYMBOL Drain-Source Voltage Gate-Source Voltage LIMIT VDS UNIT TO-220 FULLPAK SiHF8N50L-E3 500 V MAXIMUM RATINGS TC = 25 °C, unless otherwise noted New ProductABSOLUTE VGS ± 30 G Continuous Drain Currenta VGS at 10 V SiHF8N50L Pulsed Drain Current PARAMETER TC = 25 °CDrain-SourceIDVoltage 8 IDM Gate-Source Voltage 22 b Linear Derating Factor Vishay Siliconix G D S Single Pulse Avalanche Energyc • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC D • 100 % Avalanche Tested 34 ORDERING INFORMATION Q (nC) • Gate Charge Improved • Low Figure-of-Merit Ron x Qg 560S G D S x Qg • 100 % Avalanche Tested Single FEATURES TO-220 FULLPAK PRODUCT SUMMARY on 1 Qg (Max.) (nC) Configuration Continuous Drain Currenta S Operating Junction and Storage Temperature Range PARAMETER SYMBOL Lead (Pb)-free e Soldering Recommendations Maximum Junction-to-Ambient(Peak Temperature)R VGS at 10W/°C V TC = 25 °C 180 mJ D Single PulsePAvalanche Energyc 40 W Maximum dV/dt Power Dissipation 24 EAS Linear Derating Factor TC = 25 °C ORDERING INFORMATION Peak Diode Recovery dV/dtd THERMAL RESISTANCE RATINGS Package SYMBOL A 0.32 Pulsed Drain Currentb N-Channel MOSFET Maximum Power Dissipation TO-220 FULLPAK Peak Diode Recovery dV/dtd TYP. MAX. - 55 to + 150 SiHF8N50L-E3TJ, Tstg Operating Junction and Storage Temperature Range for 10 s 300 65 e 500 VGS ± 30 ID 8 IDM 22 0.32 TCV/ns = 25 °C UNIT LIMIT VDS °C EAS 180 PD 40 dV/dt 24 TJ, Tstg - 55 to + 150 thJA Soldering Recommendations (Peak Temperature) for 10 s °C/W Notes: a) Drain current limited by maximum junction temperature. b) Repetitive rating; pulse with limited by maximum junction temperature. Notes Maximum Junction-to-Case (Drain) RthJC 3.1 MAXIMUM C ==6 25 ABSOLUTE c) Vdd = 50 V, starting TJ = 25 ºC, L = RATINGS 10 mH, Rg = 25 Ω,T IAS A. d)°C, ISD ≤ unless 8 A, dI/dt ≤otherwise 460Notes A/μs, Vdd noted ≤ VDS, TJ ≤ 150 °C. e) 1.6 mm from case. a. Drain current limited by maximum junction temperature. a. Drain current limited by maximum junction temperature. SYMBOL UNIT b. Repetitive rating; pulse width limitedLIMIT by maximum junction temperature. b. PARAMETER Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 Ω, IAS = 6 A. = 50 V, starting T = 25 °C, L = 10 mH, R = 25 Ω, I = 6 A. c. SPECIFICATIONS V DD J g AS T = 25 °C, unless otherwise noted Drain-Source Voltage 500 J DS ≤ 460 A/µs, VDD ≤ VDS d. ISD ≤ 8 A,V dI/dt , TJ ≤ 150 °C. V d. ISD ≤ 8 A, dI/dt ≤ 460 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. e. 1.6 mm from case. PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT e. Gate-Source 1.6 mm fromVoltage case. Static Continuous Drain Currenta b Drain-Source Breakdown Voltage Pulsed Drain Current Coefficient V Linear Derating Factor DS Temperature Gate-Source Threshold Voltage Single Pulse Avalanche Energyc Gate-Source Leakage Maximum Power Dissipation VGS VGS at 10 V TC = 25 °C VGS = 0 V, ID = 250IDM µA ΔVDS/TJ Reference to 25 °C, ID = 1 mA VGS(th) IGSS e Drain-Source On-State Resistance RDS(on) Soldering Recommendations (Peak Temperature) Document Number: 91387 S09-1703-Rev. A, 07-Sep-09 Forward Transconductance gfs Notes Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Document Number: 91387 Gate Input Resistance S09-1703-Rev. A, 07-Sep-09 tr td(off) - 0.32 VDS = VGS, ID = 250 µA EAS VDS = 500 V, VGSNumber: = 0 V 91387 dV/dt Document A, 07-Sep-09 125 °C VDS = 400 V, VS09-1703-Rev. GS = 0 V,TT J,JT=stg ID = 4.0 A VGS = 0 V, VDS = 25 V, f = 1.0 MHz VGS = 0 V ID = 6 A, VDS = 400 V 0.5 - V/°C W/°C 5.0 mJ V - - 40 - - 24 - - to + 150- 55 2 V ± 100 W nA 50 V/ns µA www 250 °C 1 Ω www.vishay.com S 1 - 873 - - 105 - - 11 34 - 22 - 7.8 - - 10.4 - - 17.3 - pF nC VDD = 250 V, ID = 6 A RG = 14 Ω, VGS = 10 V - 35 - - 23.6 - - 17 f = 1 MHz, open drain - 0.7 - - 8 - - 22 - - 1.5 V - 63 - ns - 114 - nC - 3.3 - A tf Rg - 3.0180 - A - - 300 0.85 VDS = 50 V, ID = 3 A a.Dynamic Drain current limited by maximum junction temperature. b. Repetitive rating; pulse width limited by maximum junction temperature. Input iss Ω, IAS = 6 A. = 50 V, starting TJ = 25 °C, L = 10 mH, Rg =C25 c. VDD Capacitance d.Output ISD ≤ 8 A, dI/dt ≤ 460 A/µs, VDD ≤ VDS, TJ ≤ 150C°C. Capacitance oss e. 1.6 mm from case. Reverse Transfer Capacitance Crss Total Gate Charge 8 500 22 TC = 25 °C VGS = ± 30 V PD VGS for =1010s V 300 ± 30 ID VDS Peak Diode Recovery dV/dtd Zero Gate Voltage Drain Current IDSS Operating Junction and Storage Temperature Range ns www.vishay.com Ω 1 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Revision 07-Sep-09 MOSFETs - 500 V with Industry-Best trr of 63 ns RDS(on) (Ω) 62-2012 Vishay Siliconix • Low Figure-of-Merit R 560 VDS (V) at TJ max. IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Reverse Recovery Current IRRM PRODUCT SHEET SiHF8 Vishay S 19 SiHF8N50L • Compliant to RoHS Directive 2002/95/EC High-Voltage MOSFET Power MOSFET 500 V Low-trr in TO-220 FULLPAK Package VDS (V) at TJ max. I • 100 % Avalanche Tested New Product AND TEC INNOVAT 1 N O L OGY VGS = 10 V TO-220 FULLPAK O POWER MOSFETs 560 Configuration New Product • Low Figure-of-Merit Ron x Qg HN VDS (V) at TJ max. RDS(on) (Ω) V I S H AY I N T E R T E C H N O L O G Y, I N C . FEATURES PRODUCT SUMMARY MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 8 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/µs, VR = 15 V 2/2 VMN-PT0198-1208 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000