Si4500BDY Datasheet

Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
- 20
RDS(on) (Ω)
ID (A)
0.020 at VGS = 4.5 V
9.1
0.030 at VGS = 2.5 V
7.5
0.060 at VGS = - 4.5 V
- 5.3
0.100 at VGS = - 2.5 V
- 4.1
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
S2
SO-8
S1
1
8
D
G1
2
7
D
S2
3
6
D
G2
4
5
D
G2
D
G1
Top View
Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free)
Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
Parameter
Symbol
10 s
P-Channel
Steady State
10 s
Steady State
Drain-Source Voltage
VDS
20
- 20
Gate-Source Voltage
VGS
± 12
± 12
Continuous Drain Current (TJ = 150 °C)a,b
TA = 25 °C
TA = 70 °C
9.1
6.6
- 5.3
7.3
5.3
- 4.9
IDM
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
Maximum Power Dissipationa,b
ID
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IS
PD
V
- 3.8
- 3.1
30
- 20
2.1
1.1
- 2.1
- 1.1
2.5
1.3
2.5
1.3
1.6
0.8
1.6
0.8
TJ, Tstg
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
P-Channel
Typ.
Max.
Typ.
Max.
40
50
41
50
75
95
75
95
20
22
23
26
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
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Si4500BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.6
1.5
VDS = VGS, ID = - 250 µA
P-Ch
- 0.6
- 1.5
VDS = 0 V, VGS = ± 12 V
IGSS
VDS = 20 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
IDSS
N-Ch
± 100
P-Ch
± 100
N-Ch
1
VDS = - 20 V, VGS = 0 V
P-Ch
-1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
-5
VDS = 5 V, VGS = 4.5 V
N-Ch
30
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 20
VGS = 4.5 V, ID = 9.1 A
N-Ch
0.016
0.020
VGS = - 4.5 V, ID = - 5.3 A
P-Ch
0.048
0.060
VGS = 2.5 V, ID = 3.3 A
N-Ch
0.024
0.030
VGS = - 2.5 V, ID = - 1 A
P-Ch
0.082
0.100
ID(on)
RDS(on)
gfs
VSD
V
nA
µA
A
VDS = 15 V, ID = 9.1 A
N-Ch
29
VDS = - 15 V, ID = - 5.3 A
P-Ch
11
IS = 2.1 A, VGS = 0 V
N-Ch
0.8
1.2
IS = - 2.1 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
N-Ch
11
17
P-Ch
6.0
9
N-Ch
2.5
P-Ch
1.3
Ω
S
V
Dynamica
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 9.1 A
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.3 A
N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
P-Channel
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
N-Ch
3.2
P-Ch
1.6
nC
N-Ch
35
50
P-Ch
20
30
N-Ch
50
80
P-Ch
35
60
N-Ch
31
50
P-Ch
55
85
N-Ch
15
30
P-Ch
35
60
IF = 2.1 A, dI/dt = 100 A/µs
N-Ch
30
60
IF = - 2.1 A, dI/dt = 100 A/µs
P-Ch
25
50
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
30
VGS = 5 V thru 3 V
2.5 V
25
ID - Drain Current (A)
ID - Drain Current (A)
25
20
15
2V
10
20
15
10
TC = 125 °C
5
5
25 °C
- 55 °C
1.5 V
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.08
1600
0.07
1400
0.06
1200
3.0
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0
0
0.0
0.05
0.04
0.03
VGS = 2.5 V
0.02
VGS = 4.5 V
1000
800
600
Coss
400
0.01
200
0.00
0
Crss
0
5
10
15
20
25
30
0
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
20
1.6
5
VDS = 10 V
ID = 9.1 A
4
1.4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
4
3
2
VGS = 4.5 V
ID = 9.1 A
1.2
1.0
0.8
1
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
10
12
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
30
ID = 9.1 A
R DS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.07
TJ = 150 °C
10
TJ = 25 °C
0.06
0.05
ID = 3.3 A
0.04
0.03
0.02
0.01
0.00
0
0
0.3
0.6
0.9
1.2
0
1.5
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
80
70
ID = 250 µA
0.2
0.0
50
Power (W)
V GS(th) Variance (V)
60
- 0.2
40
30
20
- 0.4
10
- 0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
Limited by R(DS)on*
IDM Limited
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
1
ID(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
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Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 5 V thru 3.5 V
3V
TC = - 55 °C
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
2.5 V
8
25 °C
125 °C
12
8
2V
4
4
1.5 V
0
0
1
2
3
4
0
0.0
5
0.5
1.0
VDS - Drain-to-Source Voltage (V)
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
800
Ciss
600
VGS = 2.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
700
0.16
0.12
0.08
VGS = 4.5 V
500
400
300
Coss
200
0.04
Crss
100
0.00
0
0
4
8
12
16
20
0
4
ID - Drain Current (A)
8
16
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
5
VGS = 4.5 V
ID = 5.3 A
VDS = 10 V
ID = 5.3 A
1.4
4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
3
2
1.2
1.0
0.8
1
0
0
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1
2
3
4
5
6
7
8
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
20
R DS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
0.16
ID = 1 A
0.12
ID = 5.3 A
0.08
0.04
0.00
1
0.0
0.3
0.6
0.9
1.2
0
1.5
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
80
70
0.3
Power (W)
V GS(th) Variance (V)
60
0.2
ID = 250 µA
0.1
0.0
50
40
30
20
- 0.1
10
- 0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
100
IDM Limited
Limited by R(DS)on*
P(t) = 0.0001
ID - Drain Current (A)
10
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
TA = 25 °C
Single Pulse
0.1
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
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Si4500BDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 75 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72281.
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Document Number: 72281
S09-0705-Rev. D, 27-Apr-09
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Revision: 02-Oct-12
1
Document Number: 91000