SUD50N02-04P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 34 0.006 @ VGS = 4.5 V 28 VDS (V) 20 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D TO-252 Drain Connected to Tab G D D Synchronous Buck Converter − Low-Side − Desktop, Servers, Desknote D Synchronous Rectification − POL G S Top View S Ordering Information: SUD50N02-04P SUD50N02-04P—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TC= 25_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Currentc Avalanche L= 0.1 0 1 mH Energyc TA = 25_C Maximum Power Dissipation TC = 25_C Operating Junction and Storage Temperature Range Unit V 34a ID 50b A IDM 100 IS 8.3a IAS 50 A 125 mJ Eas 8.3a PD W 136 TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Single Pulse Document Number: 72216 S-40272—Rev. B, 23-Feb-04 www.vishay.com 1 SUD50N02-04P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 0.0043 0.0061 VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs mA A 0.0035 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.0048 VDS = 15 V, ID = 20 A W 0.006 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 5000 VGS = 0 V, VDS = 10 V, f = 1 MHz f = 1 MHz 1.6 W 40 60 14 VDS = 10 V, VGS = 4.5 V, ID = 50 A nC 13 VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec pF p 770 tr Turn-Off Delay Timec 1650 tf 20 30 20 30 50 75 15 25 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 0.9 1.5 V trr IF = 50 A, di/dt = 100 A/ms 45 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 200 160 120 ID - Drain Current (A) ID - Drain Current (A) VGS = 10 thru 5 V 4V 80 150 100 50 40 25_C 3V 0 0.0 2 −55_C 0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) www.vishay.com TC = 125_C 2.5 3.0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72216 S-40272—Rev. B, 23-Feb-04 SUD50N02-04P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 0.010 TC = −55_C TC = 25_C 120 0.008 RDS-on - On−Resistance (W) GFS - Transconductance (S) 160 TC = 125_C 80 40 0.006 VGS = 4.5 V VGS = 10 V 0.004 0.002 0 0.000 0 15 30 45 60 0 20 40 Capacitance V GS − Gate-to-Source Voltage (V) Ciss C − Capacitance (pF) 100 Gate Charge 10 6000 5000 4000 3000 Coss 2000 80 ID - Drain Current (A) ID - Drain Current (A) 7000 60 Crss 1000 0 8 VDS = 10 V ID = 50 A 6 4 2 0 0 5 10 15 0 20 20 VDS − Drain-to-Source Voltage (V) 1.8 40 60 80 Qg − Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 1.4 VGS = 10 V ID = 20 A I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 1.6 1.2 1.0 TJ = 150_C 10 TJ = 25_C 0.8 0.6 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72216 S-40272—Rev. B, 23-Feb-04 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUD50N02-04P Vishay Siliconix THERMAL RATINGS Max Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 40 Limited by rDS(on) 10 ms 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) 32 24 16 8 1 ms 10 10 ms 100 ms 1 1s 0.1 0 0 25 50 75 100 125 150 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance dc 0.0 175 Tc − Case Temperature (_C) 1 10 s 100 s Single Pulse TA = 25_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72216 S-40272—Rev. B, 23-Feb-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1