SK80GM063 ' ( )* +, Absolute Maximum Ratings Symbol Conditions IGBT -." '/ ( )* + # '/ ( 3)* + #78 IGBT Module SK80GM063 122 - 43 5 ' ( 42 + *6 5 )22 5 : )2 - '/ ( 3)* + 32 ? ' ( )* + 32* 5 ' ( 42 + 6* 5 #78( ) # - ( ;22 -< -9. = )2 -< -." > 122 - Units ' ( )* + -9." SEMITOP® 2 Values Inverse Diode #@ '/ ( 3*2 + #@78 #@78( ) #@ #@"8 ( 32 < $ 5 '/ ( 3*2 + 442 5 Module #78" Preliminary Data 5 '$/ ' Features ! Typical Applications* " #$ " %&" - 5, 3 C -9. ( -., # ( ) 5 #." -9. ( 2 -, -. ( -." + AB2 CCC D3)* + )*22 - ' ( )* +, Characteristics Symbol Conditions IGBT -9. AB2 CCC D3*2 min. typ. max. B,* *,* 1,* - 2,; 5 '/ ( )* + '/ ( 3)* + #9." -. ( 2 -, -9. ( ;2 - 5 '/ ( )* + )B2 '/ ( 3)* + -.2 . -. -9. ( 3* - '/ ( 3)* + 2,E - '/ ( )*+ 33 F '/ ( 3)*+ 3* F . -9.(2 CCC )2 79 ( 33 F 79 ( 33 F . 7/A ) - ),* - B,B @ @ 2,B @ ;32 - ( ;22#( 125 '/ ( 3)* + -9.(:3*- B* ;* ; )*2 )* 12 *2 ;22 B2 ),; #9' - ),B ( 3 8G H9 5 2,E # ( 322 5, -9. ( 3* - '/ ( )*+ $C -. ( )*, -9. ( 2 - 5 '/ ( )* + '/ ( 3)*+ $C Units I I 2,1 JKL GM 1 13-02-2007 DIL © by SEMIKRON SK80GM063 Characteristics Symbol Conditions Inverse Diode -@ ( -. SEMITOP® 2 IGBT Module #@ ( 12 5< -9. ( 2 - min. '/ ( )* + $C typ. max. Units 3,; 3,* - '/ ( 3)* + $C 3,) 3,B* - -@2 '/ ( 3)* + 2,4* 2,E - @ '/ ( 3)* + *,4 6,* F '/ ( 3)* + )) ),) )1 ;,* 5 ? 2,) 2,; I #778 H #@ ( 12 5 K ( A*22 5K? . -( ;22- 7/A 3,) JKL 8 M 83 ) N )3 SK80GM063 Preliminary Data Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. ! Typical Applications* " #$ " %&" GM 2 13-02-2007 DIL © by SEMIKRON SK80GM063 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 13-02-2007 DIL © by SEMIKRON SK80GM063 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 13-02-2007 DIL © by SEMIKRON SK80GM063 UL recognized file no. E 63 532 ';* " , &, O ) ' ;* 5 98 13-02-2007 DIL © by SEMIKRON