Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET ■ Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C (10.2) (8.9) Symbol Rating Unit Drain-source surrender voltage VDSS 250 V Gate-source surrender voltage VGSS ±30 V Drain current ID 20 A Peak drain current IDP 80 A EAS 657 mJ 50 W Avalanche energy capability * Power dissipation PD Ta = 25°C 2 3 (2.1) 1 (6.4) (1.4) Parameter 1.5±0.3 • Low on-resistance, low Qg • High avalanche resistance 1: Gate 2: Drain 3: Source TO-220C-G1 Package Marking Symbol: K3494 1.4 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Note) *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Drain-source surrender voltage Symbol VDSS Conditions Min ID = 1 mA, VGS = 0 250 2.0 Gate threshold voltage Vth VDS = 10 V, ID = 1 mA Drain-source cutoff current IDSS VDS = 200 V, VGS = 0 Gate-source cutoff current IGSS VGS = ±30 V, VDS = 0 Drain-source ON resistance RDS(on) VGS = 10 V, ID = 10 A Forward transfer admittance Yfs VDS = 10 V, ID = 10 A Typ Unit V 82 4.0 V 10 µA ±1 µA 105 mΩ 14 S 2 450 pF Coss 356 pF Reverse transfer capacitance (Common-source) Crss 40 pF Turn-on delay time td(on) VDD ≈ 100 V, ID = 10 A 36 ns Tr RL = 10 Ω, VGS = 10 V Short-circuit forward transfer capacitance (Common-source) Ciss Short-circuit output capacitance (Common-source) Rise time Turn-off delay time Fall time Publication date: March 2004 VDS = 25 V, VGS = 0, f = 1 MHz 7 Max 20 ns td(off) 184 ns tf 29 ns SJG00037AED 1 2SK3494 ■ Electrical Characteristics (continued) TC = 25°C ± 3°C Parameter Symbol Diode foward voltage Conditions Min Typ IDR = 20 A, VGS = 0 VDSF Max Unit −1.5 V Reverse recovery time trr L = 230 µH, VDD = 100 V 142 ns Reverse recovery charge Qrr IDR = 10 A, di/dt = 100 A/µs 668 nC Gate charge load Qg VDD = 100 V, ID = 10 A 41 nC Gate-source charge Qgs VGS = 10 V 8.4 nC Gate-drain charge Qgd 14 nC Thermal resistance (ch-c) Rth(ch-c) 2.5 °C/W Thermal resistance (ch-a) Rth(ch-a) 89.2 °C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. PC Ta Safe operation area 1 000 IDP Drain current ID (A) t = 100 µs ID 10 t= 1 ms 1 t= 10 ms 10−1 DC (1) TC = Ta (2) Without heat sink 50 (1) (2) 1 10 100 Drain-source voltage VDS (V) 2 Collector power dissipation PC (W) Non repetitive pulse TC = 25°C 100 10−2 100 1 000 0 0 25 50 75 100 125 Ambient temperature Ta (°C) SJG00037AED 150 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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