PANASONIC 2SK3372

Silicon Junction FETs (Small Signal)
2SK3372
Silicon N-Channel Junction
Unit: mm
0.33+0.05
–0.02
For impedance conversion in low frequency
For electret capacitor microphone
0.10+0.05
–0.02
0.15 min.
5˚
■ Features
1.20±0.05
0.80±0.05
3
2
0.15 min.
1
0.23+0.05
–0.02
• High mutual conductance gm
• Low noise voltage of NV
(0.40) (0.40)
0.80±0.05
1.20±0.05
0.52±0.03
5˚
Parameter
Rating
Unit
VDSO
20
V
Drain-gate voltage
VDGO
20
V
Drain-source current
IDSO
2
mA
Drain-gate current
IDGO
2
mA
Gate-source current
IGSO
2
mA
Allowable power dissipation
PD
100
mW
Operating ambient temperature
Topr
−20 to +80
°C
Storage temperature
Tstg
−55 to +125
°C
0.15 max.
Symbol
Drain-source voltage
0 to 0.01
■ Absolute Maximum Ratings Ta = 25°C
1: Drain
2: Source
3: Gate
SSSMini3-F1 Package
Marking Symbol: 1H
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Drain current
Symbol
Conditions
Min
ID *1
VDS = 2.0 V, RD = 2.2 kΩ ± 1%
100
Typ
IDSS
VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0
107
Mutual conductance
gm
VD = 2.0 V, VGS = 0, f = 1 kHz
660
Noise voltage
NV
VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, A-Curve
Voltage gain
GV1
VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
−7.5
−4.7
GV2
VD = 12 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
−4.0
−1.5
GV3
VD = 1.5 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
−8.0
−5.0
∆GV. f*2
Voltage gain difference
Electrostatic discharge *3
Max
Unit
460
µA
470
µS
1 600
4
VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz
0
dB
1.7
GV2 − GV1
0
4.0
GV1 − GV3
0
1.7
ESD
C = 200 pF, R = 0 Ω
±200
mV
dB
V
Note) *1: ID is assured for IDSS.
*2: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
*3: Test method of electrostatic discharge are based on Standard of Electronic Industries Association of Japan EIAJ ED-4701
Environmental and endurance test methods for semiconductor devices. Judgment standard is product specification.
Publication date: April 2002
SJF00032AED
1
2SK3372
PD  Ta
ID  VDS
120
ID  VGS
0.45
2.0
100
60
40
0.35
1.4
0.3 V
1.2
0.2 V
1.0
0.8
0.1 V
0.6
0V
0.4
20
− 0.3 V
0.2
0
20
40
60
80
0
100 120 140
0
Ambient temperature Ta (°C)
2
4
Forward transadmittance Yfs  (mS)
Forward transadmittance Yfs  (mS)
1.2
0.8
0.4
– 0.8
– 0.6
– 0.4
10
Yfs  ID
2.0
VDS = 2 V
Ta = 25°C
1.6
0
– 1.0
8
Drain-source voltage VDS (V)
Yfs  VGS
2.0
6
– 0.2
Gate-source voltage VGS (V)
0
VDS = 2 V
Ta = 25°C
1.6
1.2
0.8
0.4
0
0
50
100 150 200 250 300 350
Drain current ID (µA)
SJF00032AED
Drain current ID (mA)
80
0
2
VDS = 2 V
0.40
VGS = 0.4 V
1.6
Drain current ID (mA)
Allowable power dissipation PD (mW)
Ta = 25°C
1.8
0.30
0.25
Ta = 75°C
0.20
25°C
0.15
−25°C
0.10
0.05
0
– 0.5
– 0.4
– 0.3
– 0.2
– 0.1
Gate-source voltage VGS (V)
0
Request for your special attention and precautions in using the technical information
and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this book.
(4) The products described in this book are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum
rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
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permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY