Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors 26.3±1.0 24.3±1.0 5.25±0.3 1.5 Transparent epoxy resin package Long lead-wire type 2-0.8 max. 2-0.6±0.15 Parameter Symbol Ratings Unit PD 160 mW Forward current (DC) IF 50 mA Pulse forward current IFP* 1 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) 0.6±0.15 2.54 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol Conditions min typ max 9 Unit Center radiant intensity Ie IF = 50mA Radiant power PO IF = 50mA 12 mW/sr mW Peak emission wavelength λP IF = 50mA 950 nm Spectral half band width ∆λ IF = 50mA 50 nm Forward voltage (DC) VF IF = 50mA 1.3 Pulse forward voltage VFP* IFP = 1A Reverse current (DC) IR VR = 3V Capacitance between terminals Ct VR = 0V, f = 1MHz 35 pF Half-power angle θ The angle in which radiant intencity is 50% 20 deg. 1.5 V 3 V 10 µA f = 100 Hz, Duty cycle = 0.1 % 1 LNA2901L Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle 10 2 tw = 10µs Ta = 25˚C Ta = 25˚C 20 IF (mA) Pulse forward current 30 10 Forward current 50 40 Allowable forward current IF — VF 80 70 IFP (A) IF (mA) 60 1 10 –1 60 50 40 30 20 10 10 20 40 60 80 10 –2 10 –1 100 1 Ambient temperature Ta (˚C ) ∆Ie — IFP 1.2 10mA (2) 10 –1 0.8 0.4 0 – 40 1 Pulse forward current IFP (mA) λP — Ta 1000 0 40 80 120 10 2 10 1 – 40 0 40 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 940 920 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 960 120 Ambient temperature Ta (˚C ) 100 980 80 Ambient temperature Ta (˚C ) IF = 50mA Peak emission wavelength λP (nm) 1.6 ∆Ie — Ta 1mA 10 –1 1.2 10 3 IF = 50mA (1) 10 –2 0.8 IF = 50mA VF (V) 10 10 –2 10 –3 0.4 VF — Ta (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 0 Forward voltage VF (V) 1.6 Forward voltage Relative radiant intensity ∆Ie 10 2 0 10 2 10 Duty cycle (%) Relative radiant intensity (%) 0 Relative radiant intensity ∆Ie 0 – 25 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm)