Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm ø3.0±0.15 3.75±0.3 2.0±0.2 For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW (typ.) 12.5 min. Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 2 Parameter Symbol Ratings Unit PD 75 mW Forward current (DC) IF 50 mA Pulse forward Current IFP* 1 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min 1.5 typ max Unit Radiant power PO IF = 50mA Peak emission wavelength λP IF = 50mA 3.5 mW 950 nm Spectral half band width ∆λ IF = 50mA 50 Forward voltage (DC) VF IF = 50mA 1.2 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 50 pF Half-power angle θ The angle in which radiant intencity is 50% 80 deg. nm 1.5 V 10 µA 1 Infrared Light Emitting Diodes LN162S IF — Ta IFP — Duty cycle IF — VF 60 80 Ta = 25˚C 30 20 10 10 IF (mA) Pulse forward current Allowable forward current 40 1 Forward current 50 10 –1 60 50 40 30 20 10 –2 10 0 20 40 60 80 10 –3 10 –2 100 10 –1 Ambient temperature Ta (˚C ) 10 1 2 3 4 VF (V) 0 40 Relative radiant intensity (%) Peak emission wavelength λP (nm) 960 940 920 Ambient temperature Ta (˚C ) 120 80 120 0.8 0.4 0 – 40 0 40 80 120 Ambient temperature Ta (˚C ) Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C IF = 50mA 980 IF = 50mA 1.2 Ambient temperature Ta (˚C ) 100 80 1.6 VF — Ta 10 λP — Ta 40 1.2 10mA 1 – 40 5 1000 0 0.8 1.6 10 2 Forward voltage VF (V) 900 – 40 0.4 Forward voltage VF (V) Forward voltage Pulse forward current 10 2 1 0 IF = 50mA Relative radiant power ∆PO IFP (mA) tw = 10µs Duty Cycle = 0.1% Ta = 25˚C 0 0 10 2 10 3 10 3 10 –1 10 ∆PO — Ta IFP — VF 10 4 1 Duty cycle (%) 80 80 60 40 60 10˚ 20 20˚ 30˚ 40˚ 100 Relative radiant intensity (%) 0 – 25 2 Ta = 25˚C 70 IFP (A) IF (mA) 10 2 50˚ 60˚ 70˚ 80˚ 90˚ 40 20 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm)