S4101 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS(on) (Typ.) 40mW ID 55A*1 lFeatures lInner circuit 1) Low on-resistance 2) Fast switching speed (1) Gate (2) Drain (3) Source 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode 5) Simple to drive lApplication ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V ID *1 55 A ID,pulse *2 137 A Gate - Source voltage VGSS -4 to 22 V Junction temperature Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Tc = 25°C Pulsed drain current Range of storage temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 2015.10 - Rev.A Data Sheet S4101 lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 mA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA VGS (th) VDS = 10V, ID = 10mA 2.7 - 5.6 V - 40 50 mW Tj = 125°C - 60 - f = 1MHz, open drain - 7 - Gate threshold voltage VGS = 18V, ID = 20A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. RDS(on) *3 Tj = 25°C RG 2/11 W 2015.10 - Rev.A Data Sheet S4101 lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *3 VDS = 10V, ID = 20A - 8.3 - Input capacitance Ciss VGS = 0V - 1337 - Output capacitance Coss VDS = 800V - 76 - Reverse transfer capacitance Crss f = 1MHz - 27 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 600V - 122 - Turn - on delay time td(on) *3 VDD = 400V, ID = 18A - 21 - VGS = 18V/0V - 39 - td(off) *3 RL = 22W - 49 - tf *3 RG = 0W - 24 - - 283 - tr *3 Rise time Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss Eon *3 Eoff *3 S pF pF ns VDD = 600V, ID=20A VGS = 18V/0V RG = 0W L=250mH *Eon includes diode reverse recovery mJ - 118 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *3 VDD = 600V - 107 - Gate - Source charge Qgs *3 ID = 20A - 22 - Gate - Drain charge Qgd VGS = 18V - 41 - VDD = 600V, ID = 20A - 9.6 - Gate plateau voltage *3 V(plateau) nC V *1 Limited For Tj=175°C only byand maximum thermaltemperature dissiparion to allowed. ambience of 165W or more. Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/11 2015.10 - Rev.A Data Sheet S4101 lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol Conditions IS *1 Unit Min. Typ. Max. - - 55 A - - 137 A - 3.2 - V - 25 - ns - 115 - nC - 9 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *3 Reverse recovery time trr *3 Reverse recovery charge Qrr *3 Peak reverse recovery current Irrm *3 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. VGS = 0V, IS = 20A IF = 20A, VR = 600V di/dt = 1100A/ms 4/11 2015.10 - Rev.A Data Sheet S4101 lElectrical characteristic curves Fig.1 Typical Output Characteristics(I) Fig.2 Typical Output Characteristics(II) 25 50 20V 18V 16V 40 20V Drain Current : ID [A] 12V Drain Current : ID [A] 18V 16V 20 14V Ta = 25ºC Pulsed 30 20 10V 10 14V 15 12V 10V 10 Ta = 25ºC Pulsed 5 VGS= 8V VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.3 Tj = 150ºC Typical Output Characteristics(I) Fig.4 Tj = 150ºC Typical Output Characteristics(II) 25 50 16V 14V 12V 20V 18V 40 20V 10V Drain Current : ID [A] Drain Current : ID [A] 1 30 20 VGS= 8V 10 10V 20 12V 15 14V 16V 18V VGS= 8V 10 5 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 5/11 2015.10 - Rev.A Data Sheet S4101 lElectrical characteristic curves Fig.5 Typical Transfer Characteristics (I) Fig.6 Typical Transfer Characteristics (II) 50 100 VDS = 10V Pulsed VDS = 10V Pulsed 40 Drain Current : ID [A] Drain Current : ID [A] 10 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 30 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 20 10 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.8 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 10mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.7 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 -50 2 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0 50 100 150 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 10 Drain Current : ID [A] 6/11 2015.10 - Rev.A Data Sheet S4101 lElectrical characteristic curves Fig.9 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.10 Static Drain - Source On - State Resistance vs. Junction Temperature 0.16 Ta = 25ºC Pulsed 0.14 0.12 0.1 0.08 ID = 37A 0.06 ID = 20A 0.04 0.02 0 6 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 0.16 Gate - Source Voltage : VGS [V] 0.14 VGS = 18V Pulsed 0.12 0.1 0.08 0.06 ID = 37A 0.04 ID = 20A 0.02 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Fig.11 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [W] 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/11 2015.10 - Rev.A Data Sheet S4101 lElectrical characteristic curves Fig.12 Typical Capacitance vs. Drain - Source Voltage Fig.13 Coss Stored Energy 40 10000 Coss Stored Energy : EOSS [mJ] Ta = 25ºC Ciss Capacitance : C [pF] 1000 Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 30 20 10 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 600 800 Fig.15 Dynamic Input Characteristics 10000 20 tf Drain - Source Voltage : VDS [V] Ta = 25ºC VDD = 400V VGS = 18V RG = 0W Pulsed 1000 Switching Time : t [ns] 400 Drain - Source Voltage : VDS [V] Fig.14 Switching Characteristics 100 200 td(off) tr td(on) 10 1 15 Ta = 25ºC VDD = 600V ID = 20A Pulsed 10 5 0 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100110 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Total Gate Charge : Qg [nC] 8/11 2015.10 - Rev.A Data Sheet S4101 lElectrical characteristic curves Fig.16 Typical Switching Loss vs. Drain - Source Voltage Fig.17 Typical Switching Loss vs. Drain Current 500 1800 Ta = 25ºC ID=20A VGS = 18V/0V RG=0W L=250mH Switching Energy : E [mJ] 400 350 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0W L=250mH 1600 Switching Energy : E [mJ] 450 Eon 300 250 200 150 Eoff 100 1400 1200 Eon 1000 800 600 400 Eoff 200 50 0 0 200 400 600 800 0 1000 Drain - Source Voltage : VDS [V] 10 20 30 40 50 60 Drain Current : ID [A] Fig.18 Typical Switching Loss vs. External Gate Resistance 1800 Ta = 25ºC VDD=600V ID=20A VGS = 18V/0V L=250mH 1600 Switching Energy : E [mJ] 1400 1200 1000 Eon 800 Eoff 600 400 200 0 0 5 10 15 20 25 30 External Gate Resistance : RG [W] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/11 2015.10 - Rev.A Data Sheet S4101 lElectrical characteristic curves Fig.19 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.20 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.01 Ta = 25ºC di / dt = 1100A / us VR = 600V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 100 Inverse Diode Forward Current : IS [A] 10/11 2015.10 - Rev.A Data Sheet S4101 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/11 2015.10 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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