QS6J11 Dual Pch -12V -2.0A Power MOSFET Datasheet lOutline VDSS -12V RDS(on) (Max.) 105mW ID -2A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant (4) Tr2 Drain (5) Tr1 Source (6) Tr1 Drain *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging specifications Packaging Taping Reel size (mm) lApplication DC/DC converters Type 180 Tape width (mm) Basic ordering unit (pcs) 8 3,000 Taping code TR Marking J11 lAbsolute maximum ratings(Ta = 25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Value Unit Drain - Source voltage VDSS -12 V Continuous drain current ID *1 2 A ID,pulse *2 8 A VGSS 10 V PD *3 1.25 W PD *4 0.6 W Tj 150 °C Tstg -55 to +150 °C Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/11 2012.06 - Rev.B Data Sheet QS6J11 lThermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient RthJA *3 - - 100 °C/W Thermal resistance, junction - ambient RthJA *4 - - 208 °C/W lElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = -1mA ΔV(BR)DSS ID = -1mA ΔTj referenced to 25°C Values Unit Min. Typ. Max. -12 - - V - -17 - mV/°C Zero gate voltage drain current IDSS VDS = -12V, VGS = 0V - - -1 mA Gate - Source leakage current IGSS VGS = 10V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = -6V, ID = -1mA -0.3 - -1.0 V Gate threshold voltage temperature coefficient ΔV(GS)th ΔTj ID = -1mA referenced to 25C - 2.4 - mV/°C VGS= -4.5V, ID= -2A, Tj=25°C - 75 105 VGS= -2.5V, ID= -1A, Tj=25°C - 105 145 VGS= -1.8V, ID= -1A, Tj=25°C - 150 225 VGS= -4.5V, ID= -2A, Tj=25°C - 200 400 VGS= -10V, ID= -9A, Tj=125°C - 120 170 f = 1MHz, open drain - 3 - W 2.0 4.8 - S Static drain - source on - state resistance Gate input resistannce Transconductance RDS(on) *5 RG gfs *5 VDS = -6V, ID = -2A mW *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a seramic board (30×30×0.8mm) *4 Mounted on a FR4 (15×20×0.8mm) *5 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/11 2012.06 - Rev.B Data Sheet QS6J11 lElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 770 - Output capacitance Coss VDS = -6V - 75 - Reverse transfer capacitance Crss f = 1MHz - 60 - VDD ⋍ -6V, VGS = -4.5V - 10 - tr *5 ID = -1A - 17 - td(off) *5 RL = 6W - 65 - RGS = 10W - 35 - Turn - on delay time Rise time Turn - off delay time td(on) *5 tf *5 Fall time Unit pF ns lGate Charge characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Total gate charge Qg *5 Gate - Source charge Qgs *5 Gate - Drain charge Qgd *5 Conditions VDD ⋍ -6V, ID = -2A VGS = -4.5V VDD ⋍ -6V, ID = -2A VGS = -4.5V Values Min. Typ. Max. - 6.5 - - 1.3 - - 0.8 - Unit nC lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Inverse diode continuous, forward current Forward voltage www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Symbol IS *1 VSD *5 Conditions Values Unit Min. Typ. Max. Ta = 25°C - - -0.75 A VGS = 0V, Is = -2A - - -1.2 V 3/11 2012.06 - Rev.B Data Sheet QS6J11 Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 120 10 PW = 100ms 100 PW = 1ms 80 Drain Current : -ID [A] Power Dissipation : PD/PD max. [%] lElectrical characteristic curves 60 40 20 0 0 50 100 150 1 PW = 10ms 0.1 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 100 Drain - Source Voltage : -VDS [V] Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maxmum Power dissipation 1000 10 Ta= 25ºC Single Pulse Ta=25ºC Single Pulse 1 top D=1 D=0.5 D=0.1 D=0.05 D=0.01 bottom Signle 0.1 0.01 0.001 0.0001 Rth(ch-a)=100ºC/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Mounted on ceramic board (30mm × 30mm × 0.8mm) 0.01 1 Peak Transient Power : P(W) Normalized Transient Thermal Resistance : r(t) DC Operation Ta= 25ºC Single Pulse 0.01 200 Operation in this area is limited by RDS(on) ( VGS = -4.5V ) 10 1 0.1 0.0001 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 100 0.01 1 100 Pulse Width : PW [s] 4/11 2012.06 - Rev.B Data Sheet QS6J11 lElectrical characteristic curves Fig.6 Typical Output Characteristics(II) Fig.5 Typical Output Characteristics(I) 4 4 VGS= -10V VGS= -4.5V 3.5 Drain Current : -ID [A] Drain Current : -ID [A] 3 VGS= -2.5V VGS= -1.8V 2.5 2 1.5 VGS= -1.6V 1 VGS= -1.5V 0.5 0 0.2 0.4 0.6 0.8 VGS= -1.8V 3 VGS= -4.5V VGS= -2.5V 2.5 2 VGS= -1.5V 1.5 1 0 1 VGS= -1.2V 0 2 4 6 8 10 Drain - Source Voltage : -VDS [V] Drain - Source Voltage : -VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Ta= 25ºC 0.5 Ta= 25ºC 0 VGS= -10V 3.5 5/11 2012.06 - Rev.B Data Sheet QS6J11 Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics 10 40 VDS= -6V VGS=0V ID= -1mA 1 Drain Current : -ID [A] Drain - Source Breakdown Voltage : -V(BR)DSS [V] lElectrical characteristic curves 20 0 -50 0 50 100 0.1 0.01 0.001 150 0 Junction Temperature : Tj [°C] 0.5 1 1.5 2 Gate - Source Voltage : -VGS [V] Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 10 1 VDS= -6V 0.8 Transconductance : gfs [S] Gate Threshold Voltage : -VGS(th) [V] Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.6 0.4 VDS= -6V ID= -1mA 0.2 0 -50 0 50 100 Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC 0.1 0.01 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 0.1 1 10 Drain Current : -ID [A] 6/11 2012.06 - Rev.B Data Sheet QS6J11 lElectrical characteristic curves Fig.11 Drain CurrentDerating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 500 Drain Current Dissipation : ID/ID max. (%) 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [mW] 1.2 Ta= 25ºC 400 ID= -1.0A 300 ID= -2.0A 200 100 0 0 Junction Temperature : Tj [ºC] 2 4 6 8 10 Gate - Source Voltage : -VGS [V] 1000 140 Ta= 25ºC VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 . 10 0.1 1 10 Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 120 100 80 60 40 20 0 VGS= -4.5V ID= -2.0A -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] 7/11 2012.06 - Rev.B Data Sheet QS6J11 lElectrical characteristic curves Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 1000 1000 VGS= -4.5V Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 100 10 0.1 1 10 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Drain Current : -ID [A] VGS= -2.5V Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 100 10 0.1 1 10 Drain Current : -ID [A] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(IV) 1000 VGS= -1.8V 100 10 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 1 10 Drain Current : -ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/11 2012.06 - Rev.B Data Sheet QS6J11 lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Switching Characteristics 10000 10000 Ciss Switching Time : t [ns] Capacitance : C [pF] Ta = 25ºC f=1MHz VGS=0V 1000 Coss 100 Crss 1000 td(off) tf Ta = 25ºC VDD= -6V VGS= -4.5V RG=10W 100 tr 10 td(on) 10 0.01 0.1 1 10 1 100 0.01 0.1 Fig.20 Dynamic Input Characteristics Fig.21 Source Current vs. Sourse Drain Voltage 5 10 VGS= 0V Ta = 25ºC VDD= -6V ID= -2.0A RG= 10W 4 Source Current : -IS [A] Gate - Source Voltage : -VGS [V] 10 Drain Current : -ID [A] Drain - Source Voltage : -VDS [V] 3 2 1 0 1 0 1 2 3 4 5 6 7 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.01 8 Total Gate Charge : Qg [nC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 0 0.5 1 1.5 Source-Drain Voltage : -VSD [V] 9/11 2012.06 - Rev.B Data Sheet QS6J11 lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/11 2012.06 - Rev.B Data Sheet QS6J11 lDimensions (Unit : mm) D A e TSMT6 c L1 Lp HE E Q b x S A A3 e1 A l1 y S A1 A2 e S b2 Patterm of terminal position areas DIM A A1 A2 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 0.00 0.10 0.75 0.95 0.25 0.35 0.50 0.10 0.26 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.05 0.25 0.20 0.10 MILIMETERS MIN MAX 2.10 0.70 0.90 INCHES MIN 0 0.03 MAX 0.039 0.004 0.037 0.01 0.014 0.004 0.11 0.059 0.02 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.002 - 0.118 0.024 0.028 0.01 0.008 0.004 INCHES MIN MAX 0.08 - 0.028 0.035 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/11 2012.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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