Data Sheet

PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
Rev. 1— 2 September 2013
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
•
•
•
•
Ultra low diode capacitance Cd = 0.35 pF
High reverse standoff voltage VRWM = 18 V
Very small voltage dependency of the capacitance
ESD protection up to ±10 kV according to IEC 61000-4-2, level 4
3. Applications
• NFC antenna protection
• Protection of high-speed data lines
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Cd
diode capacitance f = 1 MHz; VR = 0 V
0.28 0.35 0.5
pF
VRWM
reverse standoff
voltage
-
V
-
18
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
2
sym045
Transparent
top view
DFN1006-2 (SOD882)
PESD18VF1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
6. Ordering information
Table 3.
Ordering information
Type number
Package
PESD18VF1BL
Name
Description
Version
DFN1006-2
leadless ultra small plastic package; 2 terminals
SOD882
7. Marking
Table 4.
Marking codes
Type number
Marking code
PESD18VF1BL
WM
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
IPPM
peak pulse current
tp = 8/20 µs; IEC 61000-4-5;
IEC 61643-321
Tj
junction temperature
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Min
Max
Unit
-
1
A
-
150
°C
ESD maximum ratings
VESD
electrostatic discharge voltage
IEC 61000-4-2; contact discharge
[1][2]
-
10
kV
IEC 61000-4-2; air discharge
[1][2]
-
15
kV
MIL-STD-883; human body model;
HBM
[1]
-
10
kV
machine model; MM
[1]
-
400
V
[1]
Measured from pin 1 to pin 2.
[2]
Device stressed with ten non-repetitive ESD pulses.
PESD18VF1BL
Product data sheet
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Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
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PESD18VF1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 μs
IPP
(%)
90 %
80
e−t
50 % IPP; 20 μs
40
10 %
0
0
10
20
30
t
tr = 0.7 ns to 1 ns
40
t (μs)
30 ns
60 ns
Fig 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
VRWM
reverse standoff
voltage
IRM
reverse leakage
current
VR = 18 V
VCL
clamping voltage
IPP = 1 A; tp = 8/20 µs; IEC 61000-4-5;
IEC 61643-321
VBR
breakdown voltage
IR = 10 mA
Cd
diode capacitance
f = 1 MHz; VR = 0 V
Rdyn
dynamic resistance
Conditions
IR = 10 A
[1]
[2]
Min
Typ
Max
Unit
-
-
18
V
-
1
30
nA
-
-
17
V
19
22
24
V
0.28
0.35
0.5
pF
-
0.8
-
Ω
[1]
Measured from pin 1 to pin 2.
[2]
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.1-2008.
PESD18VF1BL
Product data sheet
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Rev. 1 — 2 September 2013
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PESD18VF1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
Rd
450 Ω
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
10x
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 network
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
70
-10
-10
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig 3.
ESD clamping test setup and waveforms
aaa-008158
100
VCL
(V)
VCL
(V)
60
-20
20
-60
-20
-50
Fig 4.
aaa-008159
20
0
50
100
150
200
250
t (ns)
300
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD18VF1BL
Product data sheet
-100
-50
Fig 5.
0
50
100
150
200
250
t (ns)
300
Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
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Rev. 1 — 2 September 2013
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PESD18VF1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
IPPM
IPP
aaa-008157
0.4
Cd
(pF)
0.35
0.30
IR
IRM
-VCL -VBR -VRWM
-IRM
-IR
VRWM VBR VCL
0.25
-
0.20
-20
-10
0
10
+
-IPP
20
VR (V)
-IPPM
006aab325
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Fig 6.
Diode capacitance as a function of reverse
voltage; typical values
Fig 7.
V-I characteristics for a bidirectional ESD
protection diode
aaa-009078
25
I
(A)
20
15
10
5
0
0
10
20
30
40
VCL (V)
tp = 100 ns; Transmission Line Pulse (TLP)
Fig 8.
Dynamic resistance
PESD18VF1BL
Product data sheet
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Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
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PESD18VF1BL
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Ultra low capacitance bidirectional ESD protection diode
10. Application information
The device is designed for the protection of one bidirectional data line from surge pulses
and ESD damage. The device is suitable on lines where the signal polarities are both
positive and negative with respect to ground.
line to be protected
ESD protection diode
GND
aaa-002737
Fig 9.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input
terminal or connector as possible.
2. Minimize the path length between the
device and the protected line.
3. Keep parallel signal paths to a
minimum.
4. Avoid running protected conductors in
parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board
(PCB) conductive loops including
power and ground loops.
6. Minimize the length of the transient
return path to ground.
7. Avoid using shared transient return
paths to a common ground point.
8. Use ground planes whenever
possible. For multilayer PCBs, use
ground vias.
PESD18VF1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
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Ultra low capacitance bidirectional ESD protection diode
11. Package outline
0.50
0.46
0.62
0.55
2
0.30
0.22
0.65
0.30
0.22
1.02
0.95
1
0.55
0.47
cathode marking on top side (if applicable)
Dimensions in mm
03-04-17
Fig 10. Package outline DFN1006-2 (SOD882)
12. Soldering
1.3
0.7
R0.05 (8×)
solder lands
0.6 0.7 0.8
(2×) (2×) (2×)
0.9
solder resist
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
0.5
(2×)
sod882_fr
Fig 11. Reflow soldering footprint for DFN1006-2 (SOD882)
PESD18VF1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
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PESD18VF1BL
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Ultra low capacitance bidirectional ESD protection diode
13. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD18VF1BL v.1
20130902
Product data sheet
-
-
PESD18VF1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
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Ultra low capacitance bidirectional ESD protection diode
14. Legal information
14.1 Data sheet status
Document status[1] [2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
14.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
PESD18VF1BL
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
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inclusion and/or use of NXP Semiconductors products in such equipment or
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
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products planned, as well as for the planned application and use of
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NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
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Ultra low capacitance bidirectional ESD protection diode
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products are sold subject to the general terms and conditions of commercial
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In the event that customer uses the product for design-in and use in
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14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
15. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:[email protected]
PESD18VF1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 September 2013
© NXP B.V. 2013. All rights reserved.
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PESD18VF1BL
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Ultra low capacitance bidirectional ESD protection diode
16. Contents
1
2
3
4
5
6
7
8
9
10
11
12
13
14
14.1
14.2
14.3
14.4
15
General description . . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .1
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Application information. . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Contact information. . . . . . . . . . . . . . . . . . . . . .10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 September 2013
Document identifier: PESD18VF1BL