Power Transistors 2SB0951 (2SB951), 2SB0951A (2SB951A) Silicon PNP epitaxial planar type darlington Unit: mm Collector-base voltage (Emitter open) Symbol Rating Unit VCBO −60 V 2SB0951 Collector-emitter voltage 2SB0951 (Base open) 2SB0951A VCEO Emitter-base voltage (Collector open) VEBO −60 4.2±0.2 0.5+0.2 –0.1 0.8±0.1 16.7±0.3 5.08±0.5 V −80 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 −7 V IC −8 A Peak collector current ICP −12 A PC 45 W Ta = 25°C 1.3±0.2 1.4±0.1 2.54±0.3 Collector current dissipation φ 3.1±0.1 −80 2SB0951A Collector power 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 2.7±0.2 Solder Dip (4.0) • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 7.5±0.2 ■ Features Parameter 10.0±0.2 0.7±0.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A Internal Connection 2 C B Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) 2SB0951 Collector-base cutoff current (Emitter open) 2SB0951 Conditions IC = −30 mA, IB = 0 VCEO Min Typ Max −60 Unit V −80 2SB0951A ICBO 2SB0951A VCB = −60 V, IE = 0 −100 VCB = −80 V, IE = 0 −100 Emitter-base cutoff current (Collector open) IEBO VEB = −7 V, IC = 0 Forward current transfer ratio hFE1 * VCE = −3 V, IC = −4 A 1 000 500 hFE2 VCE = −3 V, IC = −8 A Collector-emitter saturation voltage VCE(sat) IC = −4 A, IB = −8 mA Base-emitter saturation voltage VBE(sat) IC = −4 A, IB = −8 mA µA −2 mA 10 000 −1.5 V −2.0 V fT VCE = −10 V, IC = −1 A, f = 1 MHz 20 Turn-on time ton IC = −4 A, IB1 = −8 mA, IB2 = 8 mA 0.5 µs Storage time tstg VCC = −50 V 2.0 µs Fall time tf 1.0 µs Transition frequency MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R hFE1 1 000 to 2 500 Q P 2 000 to 5 000 4 000 to 10 000 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00030BED 1 2SB0951, 2SB0951A PC Ta IC VCE (1) 20 10 (3) IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA −6 −4 –0.8mA –0.6mA –0.4mA −2 (2) –0.2mA (4) 0 40 80 120 0 160 −1 0 Ambient temperature Ta (°C) (3) (2) (1) −1 −10 −100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25 C −1 TC=–25˚C 25˚C 100˚C −1 − 0.01 − 0.1 −1 −10 −1 −10 Collector current IC (A) −100 (1)IC/IB=250 (2)IC/IB=500 (3)IC/IB=1000 TC=25˚C −10 (1) (2) (3) −1 − 0.1 − 0.1 −10 −1 −10 Collector current IC (A) Safe operation area −100 104 IE=0 f=1MHz TC=25˚C 103 Collector current IC (A) 103 Collector current IC (A) 2 − 0.1 − 0.1 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE 25˚C –25˚C −1 –25˚C Cob VCB VCE=–3V 104 102 − 0.1 −1 VBE(sat) IC −10 hFE IC TC=100˚C −5 IC/IB=500 Collector current IC (A) 105 −4 25˚C TC=100˚C VBE(sat) IC −10 − 0.1 − 0.1 −3 −10 Collector-emitter voltage VCE (V) VCE(sat) IC −100 −2 Base-emitter saturation voltage VBE(sat) (V) 0 IC/IB=500 2 10 Non repetitive pulse TC=25˚C ICP −10 IC t=1ms t=10ms DC −1 − 0.1 10 1 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) SJD00030BED − 0.01 −1 −10 2SB0951A 30 TC=25˚C 2SB0951 40 Collector-emitter saturation voltage VCE(sat) (V) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC −100 −8 50 −100 −1 000 Collector-emitter voltage VCE (V) 2SB0951, 2SB0951A Rth t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 100×100×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00030BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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