PANASONIC 2SB1504

Power Transistors
2SB1504
Silicon PNP epitaxial planar type darlington
Unit: mm
For power switching
90˚
10.8±0.2
0.85±0.1
1.0±0.1 0.8 C
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
−50
V
Emitter-base voltage (Collector open)
VEBO
−7
V
Collector current
IC
−8
A
Peak collector current
ICP
−12
A
Collector power dissipation
PC
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
16.0±1.0
2.5±0.1
0.65±0.1
0.8 C
0.7±0.1
0.7±0.1
1.15±0.2
1.15±0.2
0.4±0.1
0.5±0.1
0.8 C
1
2
2.5±0.2
3
2.05±0.2
• High forward current transfer ratio hFE
• High-speed switching
• Allowing automatic insertion with radial taping
4.5±0.2
3.8±0.2
7.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-emitter voltage (Base open)
VCEO
IC = −30 mA, IB = 0
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
VEB = −7 V, IC = 0
Forward current transfer ratio
hFE1 *
VCE = −3 V, IC = −4 A
1 000
500
hFE2
VCE = −3 V, IC = −8 A
Collector-emitter saturation voltage
VCE(sat)
IC = −4 A, IB = −8 mA
Base-emitter saturation voltage
VBE(sat)
IC = −4 A, IB = −8 mA
Min
Typ
Max
Unit
−100
µA
−50
V
−2
mA
10 000

−1.5
V
−2.0
V
fT
VCB = −10 V, IE = 0.5 A, f = 200 MHz
20
Turn-on time
ton
IC = −4 A, IB1 = −8 mA, IB2 = 8 mA
0.5
µs
Storage time
tstg
VCC = −50 V
2.0
µs
1.0
µs
Transition frequency
Fall time
tf
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
hFE1
1 000 to 2 500
Publication date: April 2003
Q
R
2 000 to 5 000 4 000 to 10 000
SJD00080BED
1
2SB1504
PC  Ta
IC  VCE
VCE(sat)  IC
−8
−100
TC=25˚C
1.6
Collector current IC (A)
1.2
0.8
IB=–2.0mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
−6
−4
–0.8mA
–0.6mA
–0.4mA
−2
0.4
–0.2mA
0
0
40
80
120
0
160
Ambient temperature Ta (°C)
−1
0
Forward current transfer ratio hFE
Base-emitter saturation voltage VBE(sat) (V)
−10
TC=–25˚C
25˚C
100˚C
−1
−1
−4
TC=100˚C
25˚C
103
−1
−10
t=10ms
t=300ms
− 0.1
103
102
10
1
− 0.1
−1
−10
−100
Collector-base voltage VCB (V)
−1 000
Without heat sink
103
102
10
1
10−1
10−4
10−3
10−2
10−1
1
Time t (s)
Collector-emitter voltage VCE (V)
2
IE=0
f=1MHz
TC=25˚C
104
Thermal resistance Rth (°C/W)
Collector current IC (A)
t=1ms
−100
−10
Rth  t
IC
−10
−1
104
Collector current IC (A)
ICP
− 0.01
−1
–25˚C
Cob  VCB
–25˚C
102
− 0.1
−10
Non repetitive pulse
TC=25˚C
−1
−1
Collector current IC (A)
VCE=–3V
Safe operation area
−10
25˚C
TC=100˚C
− 0.1
− 0.1
−5
104
Collector current IC (A)
−100
−10
hFE  IC
105
IC/IB=500
− 0.1
− 0.1
−3
IC/IB=500
Collector-emitter voltage VCE (V)
VBE(sat)  IC
−100
−2
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Collector power dissipation PC (W)
Without heat sink
Collector-emitter saturation voltage VCE(sat) (V)
2.0
SJD00080BED
10
102
103
104
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and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL