Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm For power switching 90˚ 10.8±0.2 0.85±0.1 1.0±0.1 0.8 C ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −8 A Peak collector current ICP −12 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 16.0±1.0 2.5±0.1 0.65±0.1 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package Internal Connection C B E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Collector-emitter voltage (Base open) VCEO IC = −30 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = −7 V, IC = 0 Forward current transfer ratio hFE1 * VCE = −3 V, IC = −4 A 1 000 500 hFE2 VCE = −3 V, IC = −8 A Collector-emitter saturation voltage VCE(sat) IC = −4 A, IB = −8 mA Base-emitter saturation voltage VBE(sat) IC = −4 A, IB = −8 mA Min Typ Max Unit −100 µA −50 V −2 mA 10 000 −1.5 V −2.0 V fT VCB = −10 V, IE = 0.5 A, f = 200 MHz 20 Turn-on time ton IC = −4 A, IB1 = −8 mA, IB2 = 8 mA 0.5 µs Storage time tstg VCC = −50 V 2.0 µs 1.0 µs Transition frequency Fall time tf MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P hFE1 1 000 to 2 500 Publication date: April 2003 Q R 2 000 to 5 000 4 000 to 10 000 SJD00080BED 1 2SB1504 PC Ta IC VCE VCE(sat) IC −8 −100 TC=25˚C 1.6 Collector current IC (A) 1.2 0.8 IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA −6 −4 –0.8mA –0.6mA –0.4mA −2 0.4 –0.2mA 0 0 40 80 120 0 160 Ambient temperature Ta (°C) −1 0 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) −10 TC=–25˚C 25˚C 100˚C −1 −1 −4 TC=100˚C 25˚C 103 −1 −10 t=10ms t=300ms − 0.1 103 102 10 1 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) −1 000 Without heat sink 103 102 10 1 10−1 10−4 10−3 10−2 10−1 1 Time t (s) Collector-emitter voltage VCE (V) 2 IE=0 f=1MHz TC=25˚C 104 Thermal resistance Rth (°C/W) Collector current IC (A) t=1ms −100 −10 Rth t IC −10 −1 104 Collector current IC (A) ICP − 0.01 −1 –25˚C Cob VCB –25˚C 102 − 0.1 −10 Non repetitive pulse TC=25˚C −1 −1 Collector current IC (A) VCE=–3V Safe operation area −10 25˚C TC=100˚C − 0.1 − 0.1 −5 104 Collector current IC (A) −100 −10 hFE IC 105 IC/IB=500 − 0.1 − 0.1 −3 IC/IB=500 Collector-emitter voltage VCE (V) VBE(sat) IC −100 −2 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (W) Without heat sink Collector-emitter saturation voltage VCE(sat) (V) 2.0 SJD00080BED 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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