Power Transistors 2SB1179, 2SB1179A Silicon PNP epitaxial planar type darlington Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 Parameter Collector-base voltage (Emitter open) 2SB1179 Symbol Rating Unit VCBO −60 V −60 0.75±0.1 0.4±0.1 1 2 3 V Collector-emitter voltage 2SB1179 (Base open) 2SB1179A VCEO Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −4 A Peak collector current ICP −8 A Collector power dissipation PC 15 W 1: Base 2: Collector 3: Emitter I-G1 Package −80 Ta = 25°C Note) Self-supported type package is also prepared. Internal Connection C 1.3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SB1179 E Conditions IC = −30 mA, IB = 0 VCEO Collector-base cutoff current (Emitter open) 2SB1179 Collector-emitter cutoff current (Base open) 2SB1179 Min Typ Max −60 V VBE VCE = −3 V, IC = −3 A −2.5 V ICBO VCB = −60 V, IE = 0 −200 µA VCB = −80 V, IE = 0 −200 VCE = −40 V, IB = 0 −500 VCE = −40 V, IB = 0 −500 2SB1179A ICEO 2SB1179A Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 Forward current transfer ratio hFE1 VCE = −3 V, IC = − 0.5 A 1 000 hFE2 * VCE = −3 V, IC = −3 A 2 000 VCE(sat) IC = −3 A, IB = −12 mA −2 IC = −5 A, IB = −20 mA −4 Collector-emitter saturation voltage Unit −80 2SB1179A Base-emitter voltage 0.9±0.1 0˚ to 0.15˚ 2.3±0.2 4.6±0.4 −80 2SB1179A 2.5±0.2 (1.0) 1.1±0.1 1.0±0.2 ■ Absolute Maximum Ratings TC = 25°C 12.6±0.3 7.2±0.3 • High forward current transfer ratio hFE which has satisfactory linearity • High-speed switching • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 0˚ to 0.15˚ (1.0) ■ Features 3.5±0.2 2.5±0.2 For power amplification and switching Complementary to 2SD1749, 2SD1749A −2 µA mA 10 000 V Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 Turn-on time ton IC = −3 A, IB1 = −12 mA, IB2 = 12 mA 0.3 µs Storage time tstg VCC = −50 V 2.0 µs 0.5 µs Fall time tf MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE2 Publication date: February 2003 2 000 to 5 000 4 000 to 10 000 SJD00055AED 1 2SB1179, 2SB1179A PC Ta IC VCE TC=25˚C −5 Collector current IC (A) 15 10 (1) 5 VCE=–3V IB=–3.0mA –2.5mA –2.0mA –1.5mA –1.0mA −4 −8 Collector current IC (A) (1)TC=Ta (2)Without heat sink (PC=1.3W) Collector power dissipation PC (W) IC VBE −10 −6 20 –0.5mA −3 –0.4mA −2 –0.3mA –0.2mA −6 TC=100˚C 25˚C –25˚C −4 −2 −1 (2) 0 40 80 120 0 160 Ambient temperature Ta (°C) −1 0 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −4 −10 TC=100˚C 25˚C −1 –25˚C − 0.1 −1 25˚C TC=100˚C 104 –25˚C 103 102 − 0.01 −10 − 0.1 −1 −10 t=10ms t=300ms 2SB1179A 2SB1179 − 0.1 −10 −100 102 10 1 − 0.1 −1 −10 −100 −1 000 (1)Without heat sink (2)With a 50×50×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−4 10−3 10−2 Collector-emitter voltage VCE (V) 2 103 Collector-base voltage VCB (V) 103 Thermal resistance Rth (°C/W) Collector current IC (A) t=1ms 10−1 1 Time t (s) SJD00055AED −3.2 IE=0 f=1MHz TC=25˚C Rth t −10 ICP − 0.01 −1 −2.4 104 Collector current IC (A) Non repetitive pulse TC=25˚C −1 −1.6 Cob VCB VCE=–3V Safe operation area IC − 0.8 0 Base-emitter voltage VBE (V) 105 Collector current IC (A) −100 0 −5 hFE IC 106 IC/IB=250 − 0.1 −3 Collector-emitter voltage VCE (V) VCE(sat) IC −100 − 0.01 − 0.01 −2 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL