PANASONIC 2SB1179

Power Transistors
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
Unit: mm
7.0±0.3
3.0±0.2
2.0±0.2
Parameter
Collector-base voltage
(Emitter open)
2SB1179
Symbol
Rating
Unit
VCBO
−60
V
−60
0.75±0.1 0.4±0.1
1
2
3
V
Collector-emitter voltage 2SB1179
(Base open)
2SB1179A
VCEO
Emitter-base voltage (Collector open)
VEBO
−5
V
Collector current
IC
−4
A
Peak collector current
ICP
−8
A
Collector power dissipation
PC
15
W
1: Base
2: Collector
3: Emitter
I-G1 Package
−80
Ta = 25°C
Note) Self-supported type package is also prepared.
Internal Connection
C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
B
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Collector-emitter voltage
(Base open)
Symbol
2SB1179
E
Conditions
IC = −30 mA, IB = 0
VCEO
Collector-base cutoff
current (Emitter open)
2SB1179
Collector-emitter cutoff
current (Base open)
2SB1179
Min
Typ
Max
−60
V
VBE
VCE = −3 V, IC = −3 A
−2.5
V
ICBO
VCB = −60 V, IE = 0
−200
µA
VCB = −80 V, IE = 0
−200
VCE = −40 V, IB = 0
−500
VCE = −40 V, IB = 0
−500
2SB1179A
ICEO
2SB1179A
Emitter-base cutoff current (Collector open)
IEBO
VEB = −5 V, IC = 0
Forward current transfer ratio
hFE1
VCE = −3 V, IC = − 0.5 A
1 000
hFE2 *
VCE = −3 V, IC = −3 A
2 000
VCE(sat)
IC = −3 A, IB = −12 mA
−2
IC = −5 A, IB = −20 mA
−4
Collector-emitter saturation voltage
Unit
−80
2SB1179A
Base-emitter voltage
0.9±0.1
0˚ to 0.15˚
2.3±0.2
4.6±0.4
−80
2SB1179A
2.5±0.2
(1.0)
1.1±0.1
1.0±0.2
■ Absolute Maximum Ratings TC = 25°C
12.6±0.3
7.2±0.3
• High forward current transfer ratio hFE which has satisfactory linearity
• High-speed switching
• I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
0˚ to 0.15˚
(1.0)
■ Features
3.5±0.2
2.5±0.2
For power amplification and switching
Complementary to 2SD1749, 2SD1749A
−2
µA
mA

10 000
V
Transition frequency
fT
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
20
Turn-on time
ton
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA
0.3
µs
Storage time
tstg
VCC = −50 V
2.0
µs
0.5
µs
Fall time
tf
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
Publication date: February 2003
2 000 to 5 000 4 000 to 10 000
SJD00055AED
1
2SB1179, 2SB1179A
PC  Ta
IC  VCE
TC=25˚C
−5
Collector current IC (A)
15
10
(1)
5
VCE=–3V
IB=–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
−4
−8
Collector current IC (A)
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
Collector power dissipation PC (W)
IC  VBE
−10
−6
20
–0.5mA
−3
–0.4mA
−2
–0.3mA
–0.2mA
−6
TC=100˚C
25˚C
–25˚C
−4
−2
−1
(2)
0
40
80
120
0
160
Ambient temperature Ta (°C)
−1
0
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
−4
−10
TC=100˚C
25˚C
−1
–25˚C
− 0.1
−1
25˚C
TC=100˚C
104
–25˚C
103
102
− 0.01
−10
− 0.1
−1
−10
t=10ms
t=300ms
2SB1179A
2SB1179
− 0.1
−10
−100
102
10
1
− 0.1
−1
−10
−100
−1 000
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
102
(1)
(2)
10
1
10−1
10−4
10−3
10−2
Collector-emitter voltage VCE (V)
2
103
Collector-base voltage VCB (V)
103
Thermal resistance Rth (°C/W)
Collector current IC (A)
t=1ms
10−1
1
Time t (s)
SJD00055AED
−3.2
IE=0
f=1MHz
TC=25˚C
Rth  t
−10 ICP
− 0.01
−1
−2.4
104
Collector current IC (A)
Non repetitive pulse
TC=25˚C
−1
−1.6
Cob  VCB
VCE=–3V
Safe operation area
IC
− 0.8
0
Base-emitter voltage VBE (V)
105
Collector current IC (A)
−100
0
−5
hFE  IC
106
IC/IB=250
− 0.1
−3
Collector-emitter voltage VCE (V)
VCE(sat)  IC
−100
− 0.01
− 0.01
−2
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
10
102
103
104
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
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2002 JUL