Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 ■ Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −80 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −4 A Peak collector current ICP −8 A PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C TC = 25°C 13.7±0.2 4.2±0.2 Solder Dip ■ Absolute Maximum Ratings Ta = 25°C Collector power dissipation φ 3.2±0.1 15.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package 2.0 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −30 mA, IB = 0 Base-emitter voltage VBE VCE = −3 V, IC = −3 A −2.5 V Collector-base cutoff current (Emitter open) ICBO VCB = −80 V, IE = 0 −200 µA Collector-emitter cutoff current (Base open) ICEO VCE = −40 V, IB = 0 −500 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −2 mA hFE1 Forward current transfer ratio Collector-emitter saturation voltage Conditions Min Typ Max −80 Unit V VCE = −3 V, IC = − 0.5 A 1 000 hFE2 * VCE = −3 V, IC = −3 A 1 000 VCE(sat)1 IC = −3 A, IB = −12 mA −2 VCE(sat)2 IC = −5 A, IB = −20 mA −4 10 000 V Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = −3 A, IB1 = −12 mA, IB2 = 12 mA 0.3 µs Storage time tstg VCC = −50 V 2.0 µs 0.5 µs Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R hFE2 1 000 to 2 500 Publication date: January 2003 Q P 2 000 to 5 000 4 000 to 10 000 SJD00301AED 1 2SB1623A 30 20 (2) 10 IC VBE −4.5 mA −4.0 mA −3.5 mA −3.0 mA −2.5 mA −2.0 mA −1.5 mA IB = −5.0 mA −8 −6 −1.0 mA −4 − 0.5 mA −2 (4) −4 −2 TC = 25°C 40 80 120 0 160 −2 0 −8 −10 0 −12 − 0.4 − 0.8 −1.2 0 Forward current transfer ratio hFE −1.6 −1.8 Base-emitter voltage VBE (V) hFE IC Safe operation area 105 −1 − 0.1 − 0.01 −6 Collector-emitter voltage VCE (V) VCE(sat) IC −10 −4 −2.0 Non repetitive pulse TC = 25°C Collector current IC (A) 0 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) −6 (3) 0 104 103 t = 1 ms −10 ICP IC t=1s t = 10 ms −1 − 0.1 − 0.1 −1 Collector current IC (A) 2 TC = 25°C VCE = −3 V −8 Collector current IC (A) (1) 40 IC VCE Collector current IC (A) Collector power dissipation PC (W) PC Ta (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) With a 50 × 50 × 2 mm Al heat sink (4) Without heat sink (PC = 2 W) −10 102 − 0.01 − 0.1 −1 Collector current IC (A) SJD00301AED −10 −10 −100 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL