PESD5V0H1BSF Ultra low capacitance bidirectional ESD protection diode 7 May 2015 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection family is optimized for safeguarding very sensitive high-speed interfaces against ESD pulses with a high level of robustness. 2. Features and benefits • • • • Bidirectional ESD protection of one line Extremely low diode capacitance: – Cd = 0.15 pF at 1 MHz – Cd = 0.13 pF at 2.5 GHz ESD protection up to ±15 kV according to IEC 61000-4-2 Ultra small SMD package 3. Applications ESD and surge protection for: • • • ultra high-speed datalines very sensitive interface lines generic interface lines in portable electronics, communication, consumer and computing devices. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.15 0.19 pF f = 2.5 GHz; VR = 0 V; Tamb = 25 °C - 0.13 - pF Tamb = 25 °C - - 5 V VRWM reverse standoff voltage Scan or click this QR code to view the latest information for this product PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) Simplified outline 1 2 Graphic symbol 1 2 sym045 Transparent top view DSN0603-2 (SOD962-2) 6. Ordering information Table 3. Ordering information Type number PESD5V0H1BSF Package Name Description Version DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PESD5V0H1BSF G PESD5V0H1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IPPM rated peak pulse current tp = 8/20 µs - 7 A Tj junction temperature - 150 °C Tamb ambient temperature -40 125 °C Tstg storage temperature -65 150 °C [1] ESD maximum ratings VESD electrostatic discharge voltage [1] [2] IEC 61000-4-2; contact discharge [2] - 15 kV IEC 61000-4-2; air discharge [2] - 15 kV According to IEC 61000-4-5 and IEC 61643-321. Device stressed with ten non-repetitive ESD pulses. 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 µs IPP (%) 80 90 % e- t 50 % IPP; 20 µs 40 10 % 0 Fig. 1. 0 10 20 30 t (µs) 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 PESD5V0H1BSF Product data sheet tr = 0.6 ns to 1 ns 40 t 30 ns 60 ns Fig. 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage Tamb = 25 °C - - 5 V Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 0.15 0.19 pF f = 2.5 GHz; VR = 0 V; Tamb = 25 °C - 0.13 - pF 6 10 - V VBR breakdown voltage IR = 1 mA; Tamb = 25 °C VCL clamping voltage Tamb = 25 °C; IPPM = 7 A; tp = 8/20 µs [1] - - 5 V Tamb = 25 °C; IPP = 8 A; tp = TLP [2] - 4.4 - V Tamb = 25 °C; IPP = 16 A; tp = TLP [2] - 6.3 - V [2] - 0.25 - Ω - 1 50 nA Rdyn dynamic resistance Tamb = 25 °C; IR = 10 A IRM reverse leakage current VRWM = 5 V; Tamb = 25 °C [1] [2] According to IEC 61000-4-5 and IEC 61643-321. Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008. IPPM IPP aaa-016870 0.20 Cd (pF) 0.16 -VCL -VBR -VRWM 0.12 IR IRM -IRM -IR VRWM VBR VCL - 0.08 0.04 + 0.00 -IPP -IPPM Fig. 3. V-I characteristics for a bidirectional ESD protection diode PESD5V0H1BSF Product data sheet -5 -3 -1 1 006aab325 3 VR (V) 5 f = 1 MHz; Tamb = 25 °C Fig. 4. Diode capacitance as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode aaa-016871 0.18 aaa-016872 2 Cd (pF) S21 (dB) 0.12 -2 0.06 -6 0.00 Fig. 5. 0 2 4 6 f (GHz) -10 10-2 8 Diode capacitance as a function of frequency; typical values Fig. 6. 1 10 102 aaa-016874 0 IPP (A) f (GHz) Insertion loss; typical values aaa-016873 20 10-1 IPP (A) 15 -5 Rdyn = 0.25 Ω 10 -10 Rdyn = 0.25 Ω 5 0 -15 0 5 10 15 VCL (V) -20 -20 20 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 7. Dynamic resistance with positive clamping voltage PESD5V0H1BSF Product data sheet -15 -10 -5 VCL (V) 0 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 8. Dynamic resistance with negative clamping voltage All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 -10 -10 70 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 9. ESD clamping test setup and waveforms aaa-016875 140 VCL (V) VCL (V) 100 -20 60 -60 VCL at 30 ns = 5.7 V 20 -20 -10 aaa-016876 20 0 10 20 30 40 50 -100 60 t (ns) -140 -10 70 Fig. 10. Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD5V0H1BSF Product data sheet VCL at 30 ns = 4.2 V 0 10 20 30 40 50 60 t (ns) 70 Fig. 11. Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 10. Application information The device is designed for the protection of one bidirectional data line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both positive and negative with respect to ground. The device is not designed to be used on lines connected to a DC supply. line to be protected ESD protection diode GND aaa-002737 Fig. 12. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. 2. 3. 4. 5. Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. PESD5V0H1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 11. Package outline Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 L 1 2 b e1 A A1 E D (1) 0 0.5 mm scale Dimensions (mm are the original dimensions) Unit A max 0.32 nom min 0.28 mm A1 0.03 b D E e1 0.25 0.325 0.625 0.23 0.275 0.575 0.4 L 0.15 0.13 Note 1. The marking bar indicates the cathode. Outline version sod962-2_po References IEC JEDEC JEITA European projection Issue date 13-07-12 13-07-17 SOD962-2 Fig. 13. Package outline DSN0603-2 (SOD962-2) PESD5V0H1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 12. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2 0.85 0.4 0.4 R0.025 (8×) 0.24 (2×) 0.14 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962-2_fr Fig. 14. Reflow soldering footprint for DSN0603-2 (SOD962-2) PESD5V0H1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD5V0H1BSF v.2 20150507 Product data sheet - PESD5V0H1BSF v.1 Modifications: • PESD5V0H1BSF v.1 20150429 - - PESD5V0H1BSF Product data sheet Product status changed Preliminary data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 13 PESD5V0H1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Characteristics ....................................................... 4 10 Application information .........................................7 11 Package outline ..................................................... 8 12 Soldering ................................................................ 9 13 Revision history ................................................... 10 14 14.1 14.2 14.3 14.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 May 2015 PESD5V0H1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 7 May 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 13