Data Sheet

PESD5V0L1BSF
Ultra low profile bidirectional low capacitance
ESD protection diode
Rev. 1 — 18 February 2011
Product data sheet
1. Product profile
1.1 General description
Low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD962 leadless ultra small Surface-Mounted Device (SMD) package designed to
protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
„ Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen
and antimony (Dark Green compliant)
„ Bidirectional ESD protection of one line
„ Low diode capacitance Cd = 12 pF
„ ESD protection up to ±30 kV according to IEC 61000-4-2
„ Ultra small SMD package
„ Symmetrical breakdown voltage
1.3 Applications
„
„
„
„
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
[1]
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
This parameter is guaranteed by design.
[1]
Min
Typ
Max
Unit
−5
-
5
V
9
12
15.4
pF
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode (diode 1)
2
cathode (diode 2)
Simplified outline
1
Graphic symbol
1
2
2
sym045
Transparent
top view
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PESD5V0L1BSF -
Description
Version
leadless ultra small package; 2 terminals;
body 0.6 × 0.3 × 0.3 mm
SOD962
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD5V0L1BSF
none
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
peak pulse power
IPP
peak pulse current
PPP
PESD5V0L1BSF
Product data sheet
Min
Max
Unit
tp = 8/20 μs
[1][2]
-
35
W
tp = 8/20 μs
[1][2]
-
3
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5;
see Figure 1.
[2]
Measured from pin 1 to pin 2.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
2 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
Table 6.
Symbol
VESD
ESD maximum ratings
Parameter
Conditions
electrostatic
discharge voltage
Min
Max
Unit
-
30
kV
IEC 61000-4-2
(air discharge)
-
30
kV
MIL-STD-883 (human
body model)
-
30
kV
[1][2]
IEC 61000-4-2
(contact discharge)
[1]
Measured from pin 1 to pin 2.
[2]
Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Table 7.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2, level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
001aaa191
Ipp
mle218
120
100 %
90 %
100 % Ipp; 8 μs
Ipp
(%)
80
e−t
50 % Ipp; 20 μs
40
10 %
0
Fig 1.
t
tr = 0.7 to 1 ns
0
10
20
30
t (μs)
60 ns
8/20 μs pulse waveform according to
IEC 61000-4-5
PESD5V0L1BSF
Product data sheet
30 ns
40
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
3 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
−5
-
5
V
-
1
100
nA
Per diode
VRWM
reverse standoff
voltage
IRM
reverse leakage
current
VRWM = 5 V
VCL
clamping voltage
IPP = 1 A
[1][2]
-
-
11.5
V
IPP = 3 A
[1][2]
-
-
13.5
V
IR = 1 mA
[3]
6
-
10
V
IR = −1 mA
[3]
−10
-
−6
V
f = 1 MHz
[4]
VR = 0 V
9
12
15.4
pF
VR = 2.5 V
-
8.9
11.4
pF
breakdown voltage
VBR
diode capacitance
Cd
VR = 5 V
LS
series inductance
[5]
Rdyn
dynamic resistance
[6]
[1]
PESD5V0L1BSF
Product data sheet
-
8
10.2
pF
-
0.05
-
nH
-
1
-
Ω
Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5;
see Figure 1.
[2]
Measured from pin 1 to pin 2.
[3]
Breakdown voltage is always symmetrical within the characterized range, which means no difference in
breakdown voltage from pin 1 to pin 2 and vice versa.
[4]
This parameter is guaranteed by design.
[5]
Calculated from S-parameter values.
[6]
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5.1-2008.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
4 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
018aaa055
15.0
IPP
Cd
(pF)
12.0
9.0
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
6.0
3.0
VRWM VBR VCL
−
0.0
0.0
1.0
2.0
3.0
4.0
+
−IPP
5.0
VR (V)
006aaa676
f = 1 MHz; Tamb = 25 °C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
PESD5V0x1BSF
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
Fig 5.
018aaa037
ESD clamping test setup
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
5 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
018aaa056
20
VCL
(V)
018aaa057
5
VCL
(V)
15
0
10
−5
5
−10
0
−15
−5
−50
20
90
160
230
300
t (ns)
−20
−50
f = 1 MHz; Tamb = 25 °C
Fig 6.
90
160
230
300
t (ns)
f = 1 MHz; Tamb = 25 °C
Clamped +1 kV ESD pulse waveform
(IEC 61000-4-2 network)
Clamped −1 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 7.
018aaa058
50
VCL
(V)
018aaa059
10
VCL
(V)
30
−10
10
−30
−10
−50
20
90
160
230
300
t (ns)
−50
−50
f = 1 MHz; Tamb = 25 °C
Fig 8.
20
Product data sheet
90
160
230
300
t (ns)
f = 1 MHz; Tamb = 25 °C
Clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
PESD5V0L1BSF
20
Fig 9.
Clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
6 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
7. Application information
The PESD5V0L1BSF is designed for the protection of one data or signal line from the
damage caused by ESD and/or other surge pulses. The device may be used on lines
where the signal polarities are both, positive and negative with respect to ground.
It provides protection against surges with up to 35 W per line.
line to be protected
PESD5V0L1BSF
GND
018aaa060
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible
2. The path length between the device and the protected line should be minimized
3. Avoid running protected conductors in parallel with unprotected conductors
4. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops
5. Minimize the length of the transient return path to ground
6. Avoid using shared transient return paths to a common ground point
7. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
7 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
8. Package outline
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm
SOD962
L
1
2
b
e1
A
A1
E
D
(2)
0
0.5 mm
scale
Dimensions
Unit
A(1)
A1
b
D
E
e1
max 0.32 0.0076 0.25 0.325 0.625
nom
0.4
min 0.28
0.23 0.275 0.575
mm
L
0.15
0.13
Note
1. Dimension A is including coating foil thickness.
2. The marking bar indicates the cathode.
Outline
version
sod962_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
10-11-03
10-11-11
SOD962
Fig 11. Package outline PESD5V0L1BSF (SOD962)
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
8 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
9000
PESD5V0L1BSF
[1]
SOD962
2 mm pitch, 8 mm tape and reel
-315
For further information and the availability of packing methods, see Section 13.
10. Soldering
Footprint information for reflow soldering of leadless ultra small package; 2 terminals
SOD962
0.85
0.4
0.4
R0.025 (8×)
0.22
(2×)
0.12
(2×)
0.2
(2×)
solder land
solder land plus solder paste
solder paste deposit
solder resist
Dimensions in mm
sod962_fr
Reflow soldering is the required soldering method.
Fig 12. Required reflow soldering footprint PESD5V0L1BSF (SOD962)
Based on results of board mount testing, NXP Semiconductors requires the following
soldering guidelines:
1. Soldering footprint as indicated in Figure 12: solder paste has to cover the whole
solder land area.
2. Non-solder mask defined (copper-defined) solder lands.
3. Minimum stencil thickness of 100 μm.
4. Paste type 4 or smaller sphere size.
5. Pick and placement accuracy of ±50 μm.
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
9 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD5V0L1BSF v.1
20110218
Product data sheet
-
-
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
10 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
11 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
12 of 13
PESD5V0L1BSF
NXP Semiconductors
Bidirectional low capacitance ESD protection diode
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 February 2011
Document identifier: PESD5V0L1BSF