ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are important. The combination of precision, low noise, and high speed combined with a small footprint provides the user with outstanding value and flexibility relative to similar competitive parts. • Wide Supply Range. . . . . . . . . . . . . . . . . 9V to 40V Applications for these amplifiers include precision medical and analytical instrumentation, sensor conditioning, precision power supply controls, industrial controls and photodiode amplifiers. • Low Current Consumption . . . . . . . . . . . . . 2.55mA The ISL28110 single amplifier is available in the 8 Ld SOIC, TDFN, and MSOP packages. The ISL28210 dual amplifier is available in the 8 Ld SOIC and TDFN packages. All devices are offered in standard pin configurations and operate over the extended temperature range from -40°C to +125°C. • Low Voltage Noise . . . . . . . . . . . . . . . . . . 6nV/√Hz • Input Bias Current . . . . . . . . . . . . . . . . . . . . . 2pA • High Slew Rate. . . . . . . . . . . . . . . . . . . . . . 23V/µs • High Bandwidth . . . . . . . . . . . . . . . . . . . .12.5MHz • Low Input Offset . . . . . . . . . . . . . . . . .300µV, Max • Offset Drift . . . . . . . . . . . . . . . . Grade C 10µV/°C • Operating Temperature Range . . . -40°C to +125°C • Small Package Offerings in Single, and Dual • Pb-Free (RoHS compliant) Applications*(see page 22) • Precision Instruments • Photodiode Amplifiers • High Impedance Buffers • Medical Instrumentation • Active Filter Blocks • Industrial Controls Input Bias Current vs Common Mode Input Voltage RF CF V+ PHOTO DIODE RSH CT OUTPUT + V- BASIC APPLICATION CIRCUIT - PHOTODIODE AMPLIFIER December 8, 2010 FN6639.1 1 NORMALIZED INPUT BIAS CURRENT (pA) Typical Application 10 8 VS = ±15V 6 4 2 0 -2 -4 -6 -8 -10 -15 -10 -5 0 5 10 15 VCM (V) CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2010. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. ISL28110, ISL28210 Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Pin Configurations ISL28110 (8 LD, SOIC, MSOP) TOP VIEW ISL28110 (8 LD TDFN) TOP VIEW NC 1 -IN A 2 - + +IN A 3 V- 4 8 NC NC 1 7 V+ -IN A 2 +IN A 3 6 VOUT A V- 4 5 NC 6 VOUT A PAD 5 NC 1 -IN A 2 +IN A 3 V- 4 8 V+ 7 VOUT B - + PAD 6 -IN B + - 7 V+ - + ISL28210 (8 LD SOIC) TOP VIEW ISL28210 (8 LD TDFN) TOP VIEW VOUT A 8 NC 5 +IN B VOUT A 1 -IN A 2 +IN A 3 V- 4 8 V+ 7 VOUT B - + + - 6 -IN B 5 +IN B Pin Descriptions ISL28110 (8 Ld TDFN) ISL28110 (8 Ld SOIC, ISL28210 8 Ld MSOP) (8 Ld TDFN) ISL28210 (8 Ld SOIC) PIN NAME EQUIVALENT CIRCUIT DESCRIPTION 3 3 3 3 +IN A Circuit 1 Amplifier A non-inverting input 2 2 2 2 -IN A Circuit 1 Amplifier A inverting input 6 6 1 1 VOUT A Circuit 2 Amplifier A output 4 4 4 4 V- Circuit 3 Negative power supply 5 5 +IN B Circuit 1 Amplifier B non-inverting input 6 6 -IN B Circuit 1 Amplifier B inverting input 7 7 VOUT B Circuit 2 Amplifier B output 8 8 V+ Circuit 3 Positive power supply 7 7 1, 5, 8 1, 5, 8 No connect PAD PAD IN- PAD V+ V+ IN+ OUT V- V- CIRCUIT 1 CIRCUIT 2 2 Thermal Pad is electrically isolated from active circuitry. Pad can float, connect to Ground or to a potential source that is free from signals or noise sources. V+ CAPACITIVELY TRIGGERED ESD CLAMP VCIRCUIT 3 FN6639.1 December 8, 2010 ISL28110, ISL28210 Ordering Information PART NUMBER (Notes 1, 2, 3) PART MARKING TCVOS (µV/°C) PACKAGE (Pb-free) PKG. DWG. # ISL28110FBZ 28110 FBZ -C 10 (C Grade) 8 Ld SOIC M8.15E ISL28210FBZ 28210 FBZ -C 10 (C Grade) 8 Ld SOIC M8.15E Coming Soon ISL28110FRTZ -C 8110 10 (C Grade) 8 Ld TDFN L8.3x3A Coming Soon ISL28210FRTZ -C 8210 10 (C Grade) 8 Ld TDFN L8.3x3A Coming Soon ISL28110FRTBZ 8110 4 (B Grade) 8 Ld TDFN L8.3x3A Coming Soon ISL28210FRTBZ 8210 4 (B Grade) 8 Ld TDFN L8.3x3A Coming Soon ISL28110FBBZ 28110 FBZ -C 4 (B Grade) 8 Ld SOIC M8.15E Coming Soon ISL28210FBBZ 28210 FBZ 4 (B Grade) 8 Ld SOIC M8.15E Coming Soon ISL28110FUBZ 8110Z 4 (B Grade) 8 Ld MSOP M8.118 Coming Soon ISL28110FUZ 8110Z 10 (C Grade) 8 Ld MSOP M8.118 NOTES: 1. Add “-T*” suffix for tape and reel. Please refer to TB347 for details on reel specifications.. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), please see device information page for ISL28110, ISL28210. For more information on MSL please see techbrief TB363. 3 FN6639.1 December 8, 2010 ISL28110, ISL28210 Absolute Voltage Ratings Thermal Information Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . 42V Maximum Supply Turn On Voltage Slew Rate . . . . . . . . 1V/µs Maximum Differential Input Voltage . . . . . . . . . . . . . . . 33V Min/Max Input Voltage . . . . . . . . . . . V- - 0.5V to V+ + 0.5V Max/Min Input Current for Input Voltage >V+ or <V- . .±20mA Output Short-Circuit Duration (1 output at a time) . . . . . . . . . . . . . . . . . . . . Indefinite ESD Ratings Human Body Model . . . . . . . . . . . . . . . . . . . . . . . 4000V Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Charged Device Model . . . . . . . . . . . . . . . . . . . . . 2000V Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W) 8 Ld SOIC (Notes 5, 7) ISL28110 . . . . . . . . . . . . . . . . . 125 70 ISL28210 . . . . . . . . . . . . . . . . . 120 50 8 Ld TDFN (Notes 4, 6) ISL28110 . . . . . . . . . . . . . . . . . 48 7.8 ISL28210 . . . . . . . . . . . . . . . . . 46 4.5 8 Ld MSOP (Notes 5, 7) ISL28110 . . . . . . . . . . . . . . . . . 158 60 Ambient Operating Temperature Range . . . -40°C to +125°C Storage Temperature Range . . . . . . . . . . . -65°C to +150°C Operating Junction Temperature . . . . . . . . . . . . . . +150°C Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 5. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 6. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside. 7. For θJC, the “case temp” location is taken at the package top center. Electrical Specifications PARAMETER VS = ±5V, VCM = 0, VOUT = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating temperature range, -40°C to +125°C. DESCRIPTION CONDITIONS MIN (Note 8) TYP MAX (Note 8) UNITS INPUT CHARACTERISTICS VOS Input Offset Voltage -40°C < TA < +125°C TCVOS IB Input Offset Voltage Temperature Coefficient Input Bias Current ISL28110 Input Bias Current ISL28210 IOS Input Offset Current ISL28110 -40°C < TA < +60°C 4 1 10 µV/C ±0.3 2 pA 5.3 pA -5.3 -40°C < TA < +85°C -36 36 pA -40°C < TA < +125°C -235 235 pA 2 pA -2 ±0.3 -40°C < TA < +60°C -4.5 4.5 pA -40°C < TA < +85°C -50 50 pA -40°C < TA < +125°C -245 245 pA 1 pA -40°C < TA < +60°C -2.25 2.25 pA -40°C < TA < +85°C -30 30 pA 105 pA 1 pA 3.5 pA -1 -40°C < TA < +60°C ±0.15 -105 -1 -40°C < TA < +125°C Differential Input Capacitance µV µV -2 -40°C < TA < +85°C CIN-DIFF 300 1300 -40°C < TA < +125°C -40°C < TA < +125°C Input Offset Current ISL28210 -300 -1300 ±0.15 -3.5 -32 32 pA -245 245 pA 8.3 pF FN6639.1 December 8, 2010 ISL28110, ISL28210 Electrical Specifications PARAMETER CIN-CM VS = ±5V, VCM = 0, VOUT = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating temperature range, -40°C to +125°C. (Continued) DESCRIPTION CONDITIONS MIN (Note 8) TYP MAX (Note 8) UNITS Common Mode Input Capacitance 11.8 pF Differential Input Resistance 530 GΩ RIN-CM Common Mode Input Resistance 560 GΩ VCMIR Common Mode Input Voltage Range Guaranteed by CMRR test CMRR Common Mode Rejection Ratio VCM = -3.5V to +3.5V RIN-DIFF AVOL Open-loop Gain V- + 1.5 V+ - 1.5 V- + 2.5 V+ - 2.5 V V 90 dB dB VCM = -2.5V to +2.5V 88 100 RL = 10kΩ to ground VO = -3V to +3V 104 108 103 dB dB DYNAMIC PERFORMANCE GBWP SR THD+N ts Gain-bandwidth Product G = 100, RL = 100kΩ, CL = 4pF Slew Rate, VOUT 20% to 80% G = -1, RL = 2kΩ, 4V Step Total Harmonic Distortion + Noise 11 12.5 MHz 20 V/µs G = 1, f = 1kHz, 4VP-P, RL = 2kΩ 0.0002 % G = 1, f = 1kHz, 4VP-P, RL = 600Ω 0.0003 % Settling Time to 0.1% 4V Step; 10% to VOUT AV = 1, VOUT = 4VP-P, RL = 2kΩ to VCM 0.4 µs Settling Time to 0.01% 4V Step; 10% to VOUT AV = 1, VOUT = 4VP-P, RL = 2kΩ to VCM 1 µs 580 nVP-P NOISE PERFORMANCE enP-P en in Peak-to-Peak Input Voltage Noise 0.1Hz to 10Hz Input Voltage Noise Spectral Density f = 10Hz Input Current Noise Spectral Density 14 nV/√Hz f = 100Hz 7 nV/√Hz f = 1kHz 6 nV/√Hz f = 10kHz 6 nV/√Hz f = 1kHz 9 fA/√Hz OUTPUT CHARACTERISTICS VOL Output Voltage Low, VOUT to V- RL = 10kΩ 0.8 RL = 2kΩ VOH Output Voltage High, V+ to VOUT 0.9 RL to GND = 10kΩ 0.8 RL to GND = 2kΩ ISC Output Short Circuit Current 0.9 RL = 10Ω to V+. V- 1.0 V 1.1 V 1.1 V 1.2 V 1.0 V 1.1 V 1.1 V 1.2 V ±50 mA POWER SUPPLY VSUPPLY PSRR Supply Voltage Range Guaranteed by PSRR ±4.5 Power Supply Rejection Ratio VS = ± 4.5V to ±5V 102 ±20V 115 dB 100 IS Supply Current/Amplifier 5 V dB 2.5 2.9 mA 3.8 mA FN6639.1 December 8, 2010 ISL28110, ISL28210 Electrical Specifications PARAMETER VS = ±15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating temperature range, -40°C to +125°C. DESCRIPTION CONDITIONS MIN (Note 8) MAX (Note 8) UNITS -300 300 µV -1300 1300 µV 1 10 µV/C ±2 TYP INPUT CHARACTERISTICS VOS Input Offset Voltage -40°C < TA < +125°C TCVOS IB IB IOS IOS CIN-DIFF Input Offset Voltage Temperature Coefficient (Grade C) Input Bias Current ISL28110 Input Bias Current ISL28210 Input Offset Current ISL28110 Input Offset Current ISL28210 -40°C < TA < +125°C 4.5 pA -40°C < TA < +60°C -25 4.5 25 pA -40°C < TA < +85°C -85 85 pA -40°C < TA < +125°C -950 950 pA 5 pA 5 ±2 -40°C < TA < +60°C -350 350 pA -40°C < TA < +85°C -700 700 pA -40°C < TA < +125°C -3600 3600 pA 2.5 pA -2.5 ±0.5 -40°C < TA < +60°C -25 25 pA -40°C < TA < +85°C -85 85 pA -40°C < TA < +125°C -650 650 pA 2.5 pA -2.5 ±0.5 -40°C < TA < +60°C -285 285 pA -40°C < TA < +85°C -445 445 pA -40°C < TA < +125°C -2000 2000 pA 8.3 pF Common Mode Input Capacitance 11.8 pF Differential Input Resistance 530 GΩ RIN-CM Common Mode Input Resistance 560 GΩ VCMIR Common Mode Input Voltage Range Guaranteed by CMRR test CMRR Common Mode Rejection Ratio VCM = -13.5V to +13.5V 80 100 dB Open-loop Gain RL = 10kΩ to ground VO = -12.5V to +12.5V 107 109 dB -40°C < TA < +125°C 106 CIN-CM RIN-DIFF AVOL Differential Input Capacitance V- + 1.5 V+ - 1.5 V dB DYNAMIC PERFORMANCE GBWP SR THD+N Gain-bandwidth Product G = 100, RL = 100kΩ, CL = 4pF Slew Rate, VOUT 20% to 80% G = -1, RL = 2kΩ, 10V Step Total Harmonic Distortion + Noise G = 1, f = 1kHz, 10VP-P, RL = 2kΩ G = 1, f = 1kHz, 10VP-P, RL = 600Ω ts 11 12.5 MHz 20 V/µs 0.00025 % 0.0003 % Settling Time to 0.1% 10V Step; 10% to VOUT AV = 1, VOUT = 10VP-P, RL = 2kΩ to VCM 1.3 µs Settling Time to 0.01% 10V Step; 10% to VOUT AV = 1, VOUT = 10VP-P, RL = 2kΩ to VCM 1.6 µs 6 FN6639.1 December 8, 2010 ISL28110, ISL28210 Electrical Specifications PARAMETER VS = ±15V, VCM = 0, VO = 0V, TA = +25°C, unless otherwise noted. Boldface limits apply over the operating temperature range, -40°C to +125°C. (Continued) DESCRIPTION CONDITIONS MIN (Note 8) TYP MAX (Note 8) UNITS NOISE PERFORMANCE enP-P Peak-to-Peak Input Voltage Noise 0.1Hz to 10Hz en Input Voltage Noise Spectral Density in Input Current Noise Spectral Density 600 nVP-P f = 10Hz 18 nV/√Hz f = 100Hz 7.8 nV/√Hz f = 1kHz 6 nV/√Hz f = 10kHz 6 nV/√Hz f = 1kHz 9 fA/√Hz OUTPUT CHARACTERISTICS VOL Output Voltage Low, VOUT to V- RL = 10kΩ 0.8 RL = 2kΩ VOH Output Voltage High, V+ to VOUT 0.9 RL to GND = 10kΩ 0.8 RL to GND = 2kΩ ISC Output Short Circuit Current 0.9 RL = 10Ω to V+. V- 1.0 V 1.1 V 1.1 V 1.2 V 1.0 V 1.1 V 1.1 V 1.2 V ±50 mA 115 dB POWER SUPPLY PSRR Power Supply Rejection Ratio VS = ±4.5V to ±20V 102 100 IS Supply Current/Amplifier dB 2.55 3.1 mA 3.9 mA NOTE: 8. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design. 7 FN6639.1 December 8, 2010 ISL28110, ISL28210 Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, T = +25°C, unless otherwise specified. 25 250 NUMBER OF AMPLIFIERS NUMBER OF AMPLIFIERS 200 150 100 50 0 -150 -100 -50 0 50 100 150 200 20 15 10 5 0 250 -10 -8 -6 FIGURE 1. INPUT OFFSET VOLTAGE (VOS) DISTRIBUTION 0 -2 2 4 8 6 10 FIGURE 2. TCVOS DISTRIBUTION, -40°C to +125°C 1.6 10 1.4 0 1.2 -10 -20 1.0 IB (pA) INPUT BIAS CURRENT (pA) -4 TCVOS(µV/C) VOS (µV) 0.8 0.6 VS = ±5V -30 VS = ±15V -40 -50 0.4 -60 0.2 0 VS = ±15V TA = -40°C TO +125°C VS = ±15V -70 5 6 7 8 9 10 11 ±VSUPPLY (±V) 12 13 14 -80 -40 15 FIGURE 3. INPUT BIAS CURRENT (IB) vs SUPPLY VOLTAGE -20 0 20 40 60 80 TEMPERATURE (°C) 100 120 140 FIGURE 4. ISL28110 INPUT BIAS CURRENT (IB) vs TEMPERATURE 20 100 -200 10 VS = ±5V -300 -400 VS = ±15V IOS (pA) INPUT BIAS (pA) 0 -100 -500 -600 VS = ±5V 0 -700 -800 -10 VS = ±15V -900 -1000 -1100 -40 -20 0 20 40 60 80 TEMPERATURE (°C) 100 120 140 FIGURE 5. ISL28210 INPUT BIAS CURRENT (IB) vs TEMPERATURE 8 -20 -40 -20 0 20 40 60 80 TEMPERATURE (°C) 100 120 140 FIGURE 6. ISL28110 INPUT OFFSET CURRENT (IOS) vs TEMPERATURE FN6639.1 December 8, 2010 ISL28110, ISL28210 Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, T = +25°C, unless otherwise specified. (Continued) 20 300 VS = ±5V VS = ±15V 250 IOS CHA 200 IOS CHA IOS (pA) IOS (pA) 10 0 -10 150 IOS CHB 100 50 IOS CHB 0 -20 0 20 40 60 80 TEMPERATURE (°C) 100 120 NORMALIZED INPUT BIAS CURRENT (pA) 3.5 VS = ±5V 3.0 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -5 -4 -3 -2 -1 0 1 -20 0 20 2 3 4 5 80 100 120 140 10 8 VS = ±15V 6 4 2 0 -2 -4 -6 -8 -10 -15 -10 -5 0 5 10 15 VCM (V) FIGURE 9. NORMALIZED INPUT BIAS CURRENT (IB) vs INPUT COMMON MODE VOLTAGE (VCM), VS = ±5V 500 FIGURE 10. NORMALIZED INPUT BIAS CURRENT (IB) vs INPUT COMMON MODE VOLTAGE (VCM), VS = ±15V 500 VS = ±5V 400 VS = ±15V 400 300 NORMALIZED VOS (uV) NORMALIZED VOS (uV) 60 FIGURE 8. ISL28210 INPUT OFFSET CURRENT (IOS) vs TEMPERATURE, VS = ±15V VCM (V) 200 100 0 -100 -200 -300 -400 -500 -5 40 TEMPERATURE (°C) FIGURE 7. ISL28210 INPUT OFFSET CURRENT (IOS) vs TEMPERATURE, VS = ±5V 4.0 -50 -40 140 NORMALIZED INPUT BIAS CURRENT (pA) -20 -40 300 200 100 0 -100 -200 -300 -400 -4 -3 -2 -1 0 1 VCM (V) 2 3 4 5 FIGURE 11. NORMALIZED INPUT OFFSET VOLTAGE (VOS) vs INPUT COMMON MODE VOLTAGE (VCM), VS = ±5V 9 -500 -15 -10 -5 0 VCM (V) 5 10 15 FIGURE 12. NORMALIZED INPUT OFFSET VOLTAGE (VOS) vs INPUT COMMON MODE VOLTAGE (VCM), VS = ±15V FN6639.1 December 8, 2010 ISL28110, ISL28210 Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, T = +25°C, unless otherwise specified. (Continued) 100 INPUT NOISE CURRENT 10 10 1 0.1 1 10 100 1k 10k INPUT NOISE VOLTAGE (nV/√Hz) INPUT NOISE VOLTAGE 100 1000 1000 VS = ±18V INPUT NOISE VOLTAGE 100 INPUT NOISE CURRENT 10 10 1 100k 1 0.1 1 10 100 1k FREQUENCY (Hz) FREQUENCY (Hz) FIGURE 13. INPUT NOISE VOLTAGE (en) AND CURRENT (in) vs FREQUENCY, VS = ±5V 1000 VS = ±5V AV = 10k 800 600 400 200 0 -200 -400 -600 -800 -1000 0 1 2 3 4 5 6 7 8 9 600 400 200 0 -200 -400 -600 -800 -1000 10 VS = ±18V AV = 10k 800 0 1 2 3 4 TIME (s) +25°C 0.001 -40°C 0.1 VS = ±15V CL = 4pF RL = 600 VOUT = 10VP-P C-WEIGHTED 22Hz to 500kHz -40°C +25°C 100 +125°C AV = 10 +125°C 0.01 8 9 10 VS = ±15V CL = 4pF RL = 2k VOUT = 10VP-P -40°C +25°C +125°C AV = 10 0.001 -40°C 1k 10k FREQUENCY (Hz) +25°C +125°C AV = 1 100k FIGURE 17. THD+N vs FREQUENCY vs TEMPERATURE, AV = 1, 10, VOUT = 10VP-P, RL = 600Ω 10 7 C-WEIGHTED 22Hz to 500kHz AV = 1 0.0001 10 6 FIGURE 16. 0.1Hz TO 10Hz VP-P NOISE VOLTAGE, VS = ±18V THD + N (%) THD + N (%) 0.01 5 TIME (s) FIGURE 15. 0.1Hz TO 10Hz VP-P NOISE VOLTAGE, VS =±5V 0.1 1 100k 10k FIGURE 14. INPUT NOISE VOLTAGE (en) AND CURRENT (in) vs FREQUENCY, VS = ±18V INPUT NOISE VOLTAGE (nVP-P) INPUT NOISE VOLTAGE (nVP-P) 1000 100 INPUT NOISE CURRENT (fA/√Hz) 1000 VS = ±5V INPUT NOISE CURRENT (fA/√Hz) INPUT NOISE VOLTAGE (nV/√Hz) 1000 0.0001 10 100 1k FREQUENCY (Hz) 10k 100k FIGURE 18. THD+N vs FREQUENCY vs TEMPERATURE, VOUT = 10VP-P, RL = 2kΩ FN6639.1 December 8, 2010 ISL28110, ISL28210 Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, T = +25°C, unless otherwise specified. (Continued) 1 +25°C 0.001 -40°C 5 10 15 VOUT (VP-P) 20 25 30 FIGURE 19. THD+N vs OUTPUT VOLTAGE (VOUT) vs TEMPERATURE, AV = 1 f = 1kHz, RL = 600Ω 0 RL_RECEIVE = 10k -60 RL-TRANSMIT = ∞ RL_RECEIVE = ∞ 5 10 15 VOUT (VP-P) 20 25 30 VS = ±15V VOUT = 100mVP-P 50 40 AV = 10 AV = -1 30 AV = 1 20 10 -120 1 10 100 1k 10k 100k FREQUENCY (Hz) 1M 10M 0.01 0.1 1 LOAD CAPACITANCE (nF) 10 100 FIGURE 22. SMALL SIGNAL OVERSHOOT vs LOAD CAPACITANCE (CL) 70 60 PHASE ACL = 1000 GAIN 40 30 20 10 0 100 1k 10k 100k 1M 10M 100M 1G FREQUENCY (Hz) FIGURE 23. OPEN LOOP GAIN-PHASE vs FREQUENCY 11 RF = 100kΩ, RG = 100Ω RF = 100kΩ, RG = 1kΩ 50 GAIN (dB) 200 180 160 140 120 100 80 60 40 20 0 -20 -40 -60 VS = ±15V -80 RL=1MΩ -100 0.1 1 10 0 0.001 100M FIGURE 21. CROSSTALK vs FREQUENCY GAIN (dB) -40°C FIGURE 20. THD+N vs OUTPUT VOLTAGE (VOUT) vs TEMPERATURE, AV = 1 f =1kHz, RL = 2kΩ OVERSHOOT (%) CROSSTALK (dB) RL-TRANSMIT = 2k -40 -140 +25°C +125°C 60 VS = ±15V -20 CL = 4pF VCM = 1VP-P -100 0.01 0.0001 0 -80 C-WEIGHTED 22Hz to 22kHz 0.001 +125°C 0 AV = 1 VS = ±15V CL= 4pF RL= 2k 0.1 f = 1kHz C-WEIGHTED 22Hz to 22kHz 0.01 0.0001 1 AV = 1 THD + N (%) THD + N (%) VS = ±15V CL = 4pF RL = 600 0.1 f = 1kHz ACL = 100 VS = ±5V & ±15V CL = 4pF RL = OPEN VOUT = 100mVP-P ACL = 10 RF = 100kΩ, RG = 10kΩ ACL = 1 -10 1k RF = 0, RG = ∞ 10k 100k 1M 10M 100M FREQUENCY (Hz) FIGURE 24. CLOSED LOOP GAIN vs FREQUENCY FN6639.1 December 8, 2010 ISL28110, ISL28210 Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, T = +25°C, unless otherwise specified. (Continued) 120 PSRR- 90 CMRR (dB) PSRR (dB) 80 70 60 50 40 30 20 10 VS = ±15V AV = 1 CL = 4pF RL = 10k VCM = 1VP-P 0 10 PSRR+ 100 1k 10k 100k 1M 10M 130 120 110 100 90 80 70 60 50 40 30 20 VS = ±15V 10 SIMULATION 0 0.1 1 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) 5 15 4 14 -40°C 3 +125°C +25°C VS = ±5V 1 A =2 V -1 R = R = 100k F G -2 VIN = 2.5VP-P VOL +85°C -3 -5 10 20 30 40 I-FORCE (mA) 50 60 70 INPUT INPUT (mV) 120 OUTPUT AV = 1 80 8 40 0 0 2 4 6 8 10 12 TIME (µs) 14 16 18 -13 0°C 0 10 20 30 40 I-FORCE (mA) 50 60 70 0 INPUT -40 -4 -80 -8 -12 -120 OUTPUT 4 -160 0 20 -200 FIGURE 29. POSITIVE OUTPUT OVERLOAD RECOVERY TIME 12 85°C 0 OUTPUT (V) 20 VS = ±15V AV = 100 RL = 10k 16 VIN = 100mVP-P OVERDRIVE = 1V 12 160 VS = ±15V AV = 2 RF = RG = 100k VIN = 7.5VP-P FIGURE 28. OUTPUT VOLTAGE (VOUT) vs OUTPUT CURRENT (IOUT) vs TEMPERATURE, VS = ±15V FIGURE 27. OUTPUT VOLTAGE (VOUT) vs OUTPUT CURRENT (IOUT) vs TEMPERATURE, VS = ±5V 200 25°C -12 -14 -15 0°C 0 125°C 12 10 -10 -11 -4 100M -40°C 13 11 INPUT (mV) VOL 2 10M FIGURE 26. COMMON-MODE REJECTION RATIO (CMRR) vs FREQUENCY VOH VOH FIGURE 25. POWER SUPPLY REJECTION RATIO (PSRR) vs FREQUENCY 1M 0 2 4 6 8 10 12 VS = ±15V AV = 100 RL = 10k VIN = 100mVP-P OVERDRIVE = 1V 14 16 18 OUTPUT (V) 110 100 -16 -20 20 TIME (µs) FIGURE 30. NEGATIVE OUTPUT OVERLOAD RECOVERY TIME FN6639.1 December 8, 2010 ISL28110, ISL28210 Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, T = +25°C, unless otherwise specified. (Continued) 30 30 -SR -SR 25 SLEW RATE (V/µs) SLEW RATE (V/µs) 25 20 +SR 15 10 VS = ±5V VOUT-PP = 4V RL = 2k CL = 4pF 5 0 -1 -2 -3 20 +SR 15 10 VS = ±15V VOUT-PP = 10V RL = 2k CL = 4pF 5 -4 -5 -6 -7 -8 -9 0 -1 -10 -2 -3 -4 -5 GAIN -6 -7 -8 -9 -10 GAIN FIGURE 31. SLEW RATE vs INVERTING CLOSED LOOP GAIN, VS = ±5V FIGURE 32. SLEW RATE vs INVERTING CLOSED LOOP GAIN, VS = ±15V 30 30 25 25 -SR SLEW RATE (V/µs) SLEW RATE (V/µs) -SR 20 15 +SR 10 VS = ±5V VOUT-PP = 4V RL = 2k CL = 4pF 5 0 1 2 3 4 5 6 GAIN 7 8 9 10 0 10 VS = ±15V VOUT-PP = 10V RL = 2k CL = 4pF 1 2 3 4 5 6 GAIN 7 8 9 10 FIGURE 34. SLEW RATE vs NON-INVERTING CLOSED LOOP GAIN, VS = ±15V 6 0.15 VS = ±15V AV = 1 RL = 2k CL = 4pF 0.10 2 0 0 -0.05 -2 -0.10 -4 0 0.1 0.2 VS = ±15V AV = 1 RL = 2k CL = 4pF 4 VOUT (V) 0.05 -0.15 +SR 15 5 FIGURE 33. SLEW RATE vs NON-INVERTING CLOSED LOOP GAIN, VS = ±5V VOUT (V) 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TIME (µs) FIGURE 35. SMALL SIGNAL TRANSIENT RESPONSE 13 -6 0 1 2 3 4 5 6 7 8 9 10 TIME (µs) FIGURE 36. LARGE SIGNAL UNITY GAIN TRANSIENT RESPONSE FN6639.1 December 8, 2010 ISL28110, ISL28210 Typical Performance Curves VS = ±15V, VCM = 0V, RL = Open, T = +25°C, unless otherwise specified. (Continued) 6 6 VS = ±15V AV = +10 4 R = 2k L CL = 4pF 2 VS = ±15V AV = -1 RL = 2k CL = 4pF 4 VOUT (V) VOUT (V) 2 0 -2 -2 -4 -4 -6 0 1 2 3 4 5 6 TIME (µs) 7 8 9 -6 10 FIGURE 37. LARGE SIGNAL 10V STEP RESPONSE AV = -1 0 VS = ±15V VOUT = 10VP-P RL = 2kΩ 1 2 3 4 7 8 9 10 VS = ±15V 100 G = 10 ZOUT (Ω) 0.01% 10 5 6 TIME (µs) FIGURE 38. LARGE SIGNAL 10V STEP RESPONSE AV = +10 1000 100 SETTLING TIME (µs) 0 0.1% 10 G = 100 1 1 0.1 0.1 1 10 100 CLOSED LOOP GAIN (V/V) FIGURE 39. SETTLING TIME (tS) vs CLOSED LOOP GAIN Applications Information Functional Description The ISL28110 and ISL28210 are single and dual 12.5 MHz precision JFET input op amps. These devices are fabricated in the PR40 Advanced Silicon-on-Insulator (SOI) bipolar-JFET process to ensure latch-free operation. The precision JFET input stage provides low input offset voltage (300µV max @ +25°C), low input voltage noise (6nV/√Hz), and input current noise that is very low with virtually no 1/f component. A high current complementary NPN/PNP emitter-follower output stage provides high slew rate and maintains excellent THD+N performance into heavy loads (0.0003% @ 10VP-P @ 1kHz into 600Ω). Operating Voltage Range The devices are designed to operate over the 9V (±4.5V) to 40V (±20V) range and are fully characterized at 10V (±5V) and 30V (±15V). The JFET input stage maintains high impedance over a maximum input differential 14 0.01 10 G=1 100 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) FIGURE 40. ZOUT vs FREQUENCY voltage range of ±33V. Internal ESD protection diodes clamp the non-inverting and inverting inputs to one diode drop above and below the V+ and V- the power supply rails (“Pin Descriptions” on page 2, CIRCUIT 1). Input ESD Diode Protection The JFET gate is a reverse-biased diode with >33V reverse breakdown voltage which enables the device to function reliably in large signal pulse applications without the need for anti-parallel clamp diodes required on MOSFET and most bipolar input stage op amps. No special input signal restrictions are needed for power supply operation up to ±15V, and input signal distortion caused by nonlinear clamps under high slew rate conditions are avoided. For power supply operation greater than ±16V (>32V), the internal ESD clamp diodes alone cannot clamp the maximum input differential signal to the power supply rails without the risk of exceeding the 33V breakdown of the JFET gate. Under these conditions, differential input voltage limiting is necessary to prevent damage to the JFET input stage. FN6639.1 December 8, 2010 ISL28110, ISL28210 In applications where one or both amplifier input terminals are at risk of exposure to voltages beyond the supply rails, current limiting resistors may be needed at each input terminal (see Figure 41 RIN+, RIN-) to limit current through the power supply ESD diodes to 20mA. V+ VINVIN+ RIN- - RIN + RL FIGURE 41. INPUT ESD DIODE CURRENT LIMITING JFET Input Stage Performance The ISL28110, ISL28210 JFET input stage has the linear gain characteristics of the MOSFET but can operate at high frequency with much lower noise. The reversedbiased gate PN gate junction has significantly lower gate capacitance than the MOSFET, enabling input slew rates that rival op amps using bipolar input stages. The added advantage for high impedance, precision amplifiers is the lack of a significant 1/f component of current noise (Figures 13, 14) as there is virtually no gate current. 10 INPUT OFFSET VOLTAGE (VOS) 500 VS = ±15V T = +25°C 400 6 300 4 200 2 100 0 0 -2 -100 -4 -200 -300 INPUT BIAS (IB) -8 -10 -15 -400 -10 -5 0 5 10 -500 15 VCM (V) FIGURE 42. INPUT OFFSET VOLTAGE AND BIAS CURRENT vs COMMON MODE INPUT VOLTAGE 15 NORMALIZED VOS (uV) NORMALIZED INPUT BIAS CURRENT (pA) The input stage JFETs are bootstrapped to maintain a constant JFET drain to source voltage which keeps the JFET gate currents and input stage frequency response nearly constant over the common mode input range of the device. These enhancements provide excellent CMRR, AC performance and very low input distortion over a wide temperature range. The common mode input performance for offset voltage and bias current is shown in Figure 42. Note that the input bias current remains low even after the maximum input stage common mode voltage is exceeded (as indicated by the abrupt change in input offset voltage). -6 The complementary bipolar emitter follower output stage features low output impedance (Figure 40) and is capable of substantial current drive over the full temperature range (Figures 27, 28) while driving the output voltage close to the supply rails. The output current is internally limited to approximately ±50mA at +25°C. The amplifiers can withstand a short circuit to either rail as long as the power dissipation limits are not exceeded. This applies to only 1 amplifier at a time for the dual op amp. Continuous operation under these conditions may degrade long term reliability. Output Phase Reversal V- 8 Output Drive Capability Output phase reversal is a change of polarity in the amplifier transfer function when the input voltage exceeds the supply voltage. The ISL28110 and ISL28210 are immune to output phase reversal, out to 0.5V beyond the rail (VABS MAX) limit. Beyond these limits, the device is still immune to reversal to 1V beyond the rails but damage to the internal ESD protection diodes can result unless these input currents are limited. Maximizing Dynamic Signal Range The amplifiers maximum undistorted output swing is a figure of merit for precision, low distortion applications. Audio amplifiers are a good example of amplifiers that require low noise and low signal distortion over a wide output dynamic range. When these applications operate from batteries, raising the amplifier supply voltage to overcome poor output voltage swing has the penalty of increased power consumption and shorter battery life. Amplifiers whose input and output stages can swing closest to the power supply rails while providing low noise and undistorted performance, will provide maximum useful dynamic signal range and longer battery life. Rail-to-rail input and output (RRIO) amplifiers have the highest dynamic signal range but their added complexity degrades input noise and amplifier distortion. Many contain two input pairs, one pair operating to each supply rail. The trade-offs for these are increased input noise and distortion caused by non-linear input bias current and capacitance when amplifying high impedance sources. Their rail-to-rail output stages swing to within a few millivolts of the rail, but output impedances are high so that their output swing decreases and distortion increases rapidly with increasing load current. At heavy load currents the maximum output voltage swing of RRO op amps can be lower than a good emitter follower output stage. The ISL28110 and ISL28210 low noise input stage and high performance output stage are optimized for low THD+N into moderate loads over the full -40°C to +125°C temperature range. Figures 19 and 20 show the 1kHz THD+N unity gain performance vs output voltage swing at load resistances of 2kΩ and 600Ω. Figure 43 shows the unity-gain THD+N performance driving 600Ω from ±5V supplies. FN6639.1 December 8, 2010 ISL28110, ISL28210 ISL28110 and ISL28210 SPICE Model 1 VS = ±5V RL = 600Ω THD+N (%) 0.1 AV = 1 +125°C +85°C +25°C 0.01 0.001 0°C -40°C 0.0001 0 1 2 3 4 5 6 VP-P (V) 7 8 9 10 FIGURE 43. UNITY-GAIN THD+N vs OUTPUT VOLTAGE vs TEMPERATURE AT VS = ±5V FOR 600Ω LOAD Power Dissipation It is possible to exceed the +150°C maximum junction temperatures under certain load and power supply conditions. It is therefore important to calculate the maximum junction temperature (TJMAX) for all applications to determine if power supply voltages, load conditions, or package type need to be modified to remain in the safe operating area. These parameters are related using Equation 1: T JMAX = T MAX + θ JA xPD MAXTOTAL (EQ. 1) where: • PDMAXTOTAL is the sum of the maximum power dissipation of each amplifier in the package (PDMAX) • PDMAX for each amplifier can be calculated using Equation 2: V OUTMAX PD MAX = V S × I qMAX + ( V S - V OUTMAX ) × ---------------------------RL (EQ. 2) where: • TMAX = Maximum ambient temperature • θJA = Thermal resistance of the package • PDMAX = Maximum power dissipation of 1 amplifier • VS = Total supply voltage • IqMAX = Maximum quiescent supply current of 1 amplifier Figure 44 shows the SPICE model schematic and Figure 45 shows the net list for the SPICE model. The model is a simplified version of the actual device and simulates important AC and DC parameters. AC parameters incorporated into the model are: 1/f and flatband noise voltage, Slew Rate, CMRR, Gain and Phase. The DC parameters are IOS, total supply current and output voltage swing. The model uses typical parameters given in the “Electrical Specifications” Table beginning on page 4. The AVOL is adjusted for 125dB with the dominant pole at 7Hz. The CMRR is set 120dB, f = 280kHz. The input stage models the actual device to present an accurate AC representation. The model is configured for ambient temperature of +25°C. Figures 46 through 59 show the characterization vs simulation results for the Noise Voltage, Closed Loop Gain vs Frequency, Small Signal 0.1V Step, Large Signal 5V Step Response, Open Loop Gain Phase, CMRR and Output Voltage Swing for ±5V and ±15V supplies. LICENSE STATEMENT The information in this SPICE model is protected under the United States copyright laws. Intersil Corporation hereby grants users of this macro-model hereto referred to as “Licensee”, a nonexclusive, nontransferable licence to use this model as long as the Licensee abides by the terms of this agreement. Before using this macro-model, the Licensee should read this license. If the Licensee does not accept these terms, permission to use the model is not granted. The Licensee may not sell, loan, rent, or license the macro-model, in whole, in part, or in modified form, to anyone outside the Licensee’s company. The Licensee may modify the macro-model to suit his/her specific applications, and the Licensee may make copies of this macro-model for use within their company only. This macro-model is provided “AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUY NOT LIMITED TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.” In no event will Intersil be liable for special, collateral, incidental, or consequential damages in connection with or arising out of the use of this macro-model. Intersil reserves the right to make changes to the product and the macro-model without prior notice. • VOUTMAX = Maximum output voltage swing of the application • RL = Load resistance 16 FN6639.1 December 8, 2010 C3 6e-12 21 9 DN 19 3 2 +- + - NPN_CASCODE R3 5e11 E En CinDif 5.87E-40 5 0 6 J1 7 Cin2 7.27e-40 4 R7 16 18 DX Vg Vg Vmid Vmid D8 V7 1.18 D4 DBREAK 17 24 G2 PJ110_INPUT 250 R10 5 Vmid G4 1 GAIN = 33 J3 PJ110_CASCODE Cin1 7.27e-40 V6 1.18 25 V5 1.18 15 J4 C4 2.5e-12 27 G GAIN = 181.819E-6 D6 V-- C5 R14 200k E2 + + - E GAIN = 0.5 2.5e-12 D10 V-- V-- VCM INPUT STAGE GAIN STAGE MID SUPPLY REF V V+ E3 + + - E GAIN = 1 L3 L1 5.30532e-10 31 R17 0.001 318.319274232055 318.319274232055 G11 G9 + + G G GAIN = 0.0031415 D11 GAIN = 0.0031415 DX C6 C8 29 10e-12 Vc Vg Vmid VC .523 R23 50 Vout VOUT 38 L4 5.30532e-10 10e-12 GAIN = 0.0031415 R20 R22 318.319274232055 318.319274232055 V-- D13 G13 G14 + + G G GAIN = 1.11e-2 GAIN = 1.11e-2 D16 V-V- COMMON MODE GAIN STAGE WITH ZERO Vout .523 DY 10e-12 GAIN = 0.0031415 V9 36 C9 G12 DY + - + - FN6639.1 December 8, 2010 VCM 32 + - V-- C7 G10 + - GAIN = 1 GAIN = 1 L2 5.30532e-10 G15 Vout GAIN = 20e-3 Vout ISY R18 0.001 G8 V8 37 DX 30 G6 G 35 34 D12 R16 0.001 D15 10e-12 33 2.5E-3 Vmid D14 DX 5.30532e-10 G7 + 28 G R15 0.001 GAIN = 1 V++ R21 DX VCM G5 + G GAIN = 1 V++ R19 V-E4 + + - E GAIN = 1 0 FIGURE 44. SPICE NET LIST CORRECTION CURRENT OUTPUT STAGE SOURCES Vout G + - 0 ++ - V++ G16 GAIN = 20e-3 Vout R24 50 ISL28110, ISL28210 PJ110_CASCODE J2 14 R13 200k VC R8 100 GAIN = 1 Q1 NPN_CASCODE Q5 NPN_CASCODE pj110_input GAIN = 1 Q2 Q4 R4 IOS 250 0.3E-12 NPN_CASCODE R12 1e10 26 G3 + G Vmid GAIN = 181.819E-6 1k EOS Vc +- + E Vmid C2 4e-12 D3 DBREAK 13 D7 R11 23 D2 DBREAK 12 1 DX D1 1.18 DX 17 R2 5e11 R1 Vin+ PNP_MIRROR Q6 8 1 0 110 buffer2 +- + E + - buffer1 + + - E 0.4 V1 20 11 PNP_MIRROR Q7 Vin- G1 + R9 G 22 GAIN = 33 V4 C1 4e-12 DX R6 5.5k R5 5.5k D5 D9 DX 0.7Vdc I1 240E-6 10 DX V3 + - 0.7Vdc V++ V++ V++ V2 ISL28110, ISL28210 * source ISL28110_210_presubckt_0 * Revision A, LaFontaine Nov 4th 2010 * Model for Noise 200nV/[email protected] *11nV/rtHz base band, supply current 2.5mA, *CMRR 120dB fcm=281kHz ,AVOL 125dB *fd=7Hz * SR = 20V/us, GBWP 12.6MHz, Output *voltage clamp *Copyright 2010 by Intersil Corporation *Refer to data sheet “LICENSE STATEMENT” *Use of this model indicates your acceptance *with the terms and provisions in the License *Statement. * Connections: * +input * | -input * | | +Vsupply * | | | -Vsupply * | | | | output * | | | | | .subckt ISL28110subckt Vin+ Vin- V+ V- VOUT * source ISL28110_210_PRESUBCKT_0 * *Voltage Noise * E_En VIN+ 4 2 0 1 V_V1 1 0 0.4 D_D1 1 2 DN R_R1 2 0 110 * *Input Stage * R_R2 VIN- 3 5e11 R_R3 3 4 5e11 C_CinDif 4 VIN- 5.87E-40 C_Cin1 V-- VIN- 7.27e-40 C_Cin2 V-- 4 7.27e-40 I_IOS 4 VIN- DC 0.3E-12 R_R4 5 VIN- 250 J_J1 7 5 6 pj110_input J_J2 15 16 14 pj110_input J_J3 V-- 14 15 PJ110_CASCODE J_J4 V-- 6 7 PJ110_CASCODE Q_Q1 19 13 14 NPN_CASCODE Q_Q2 12 13 6 NPN_CASCODE Q_Q4 8 13 6 NPN_CASCODE Q_Q5 12 13 14 NPN_CASCODE Q_Q6 19 11 20 PNP_MIRROR Q_Q7 8 11 9 PNP_MIRROR V_V2 V++ 10 0.7Vdc V_V3 V++ 21 0.7Vdc R_R5 9 10 5.5k R_R6 20 21 5.5k E_buffer1 11 V++ 8 V++ 1 E_buffer2 13 V-- 12 V-- 1 D_D2 8 19 DBREAK D_D3 19 8 DBREAK I_I1 V++ 12 DC 240E-6 C_C1 19 V++ 4e-12 C_C2 V-- 19 4e-12 R_R7 16 17 250 E_EOS 17 4 VC VMID 1 * *1st Gain Stage * R_R8 18 V++ 100 D_D4 V-- 18 DBREAK D_D5 22 V++ DX D_D6 V-- 24 DX V_V4 22 23 1.18 V_V5 23 24 1.18 G_G1 V++ 23 19 8 33 G_G2 V-- 23 19 8 33 R_R9 23 V++ 1 R_R10 V-- 23 1 R_R11 25 23 1k D_D7 25 VMID DX D_D8 VMID 25 DX R_R12 25 VMID 1e10 G_G3 V++ VG 25 VMID 181.819E-6 G_G4 V-- VG 25 VMID 181.819E-6 D_D9 26 V++ DX D_D10 V-- 27 DX V_V6 26 VG 1.18 V_V7 VG 27 1.18 R_R13 VG V++ 200k R_R14 V-- VG 200k C_C3 8 VG 6e-12 C_C4 VG V++ 2.5e-12 C_C5 V-- VG 2.5e-12 * * Mid Supply Reference * E_E2 VMID V-- V++ V-- 0.5 E_E3 V++ 0 V+ 0 1 E_E4 V-- 0 V- 0 1 I_ISY V+ V- DC 2.5E-3 * *Common Mode Gain Stage 40dB/dec * G_G5 V++ 29 3 VMID 1 G_G6 V-- 29 3 VMID 1 G_G7 V++ VC 29 VMID 1 G_G8 V-- VC 29 VMID 1 L_L1 28 V++ 5.30532e-11 L_L2 30 V-- 5.30532e-11 L_L3 31 V++ 5.30532e-11 L_L4 32 V-- 5.30532e-11 R_R15 29 28 0.001 R_R16 30 29 0.001 R_R17 VC 31 0.001 R_R18 32 VC 0.001 * *Second Pole Stage 40dB/dec * G_G9 V++ 33 VG VMID 0.0031415 G_G10 V-- 33 VG VMID 0.0031415 G_G11 V++ 34 33 VMID 0.0031415 G_G12 V-- 34 33 VMID 0.0031415 R_R19 33 V++ 318.319274232055 R_R20 V-- 33 318.319274232055 R_R21 34 V++ 318.319274232055 R_R22 V-- 34 318.319274232055 C_C6 33 V++ 10e-12 C_C7 V-- 33 10e-12 C_C8 34 V++ 10e-12 C_C9 V-- 34 10e-12 * * Output Stage * D_D11 34 35 DX D_D12 36 34 DX D_D13 V-- 37 DY D_D14 V++ 37 DX D_D15 V++ 38 DX D_D16 V-- 38 DY G_G13 37 V-- VOUT 34 1.11e-2 G_G14 38 V-- 34 VOUT 1.11e-2 G_G15 VOUT V++ V++ 34 20e-3 G_G16 V-- VOUT 34 V-- 20e-3 V_V8 35 VOUT -.384 V_V9 VOUT 36 -.384 R_R23 VOUT V++ 50 R_R24 V-- VOUT 50 * * .model pj110_input pjf + vto=-1.4 + beta=0.0025 + lambda=0.03 + is=2.68e-015 + pb=0.73 + cgd=8.6e-012 + cgs=9.05e-012 + fc=0.5 kf=0 + af=1 + tnom=35 * .model NPN_CASCODE npn + is=5.02e-016 + bf=150 + va=300 + ik=0.017 + rb=0.01 + re=0.011 + rc=900 + cje=2e-013 + cjc=1.6e-028 + kf=0 + af=1 * .model PJ110_CASCODE pjf + vto=-1.4 + beta=0.000617 + lambda=0.03 + is=3.96e-016 + pb=0.73 + cgd=2.2e-012 + cgs=3e-012 + fc=0.5 + kf=0 + af=1 + tnom=35 * .model DBREAK d + bv=43 + rs=1 * .model PNP_MIRROR pnp + is=4e-015 + bf=150 + va=50 + ik=0.138 + rb=0.01 + re=0.101 + rc=180 + cje=1.34e-012 + cjc=4.4e-013 + kf=0 + af=1 * .model DN D(KF=6.69e-12 AF=1) .MODEL DX D(IS=1E-12 Rs=0.1) .MODEL DY D(IS=1E-15 BV=50 Rs=1) .ends ISL28110subckt FIGURE 45. SPICE NET LIST 18 FN6639.1 December 8, 2010 ISL28110, ISL28210 Characterization vs Simulation Results 1000 VS = ±18V INPUT NOISE VOLTAGE 100 100 10 10 1 0.1 1 10 100 1k FREQUENCY (Hz) 1000 INPUT NOISE VOLTAGE (nV/√Hz) INPUT NOISE VOLTAGE (nV/√Hz) 1000 INPUT NOISE VOLTAGE 100 1 100k 10k FIGURE 46. CHARACTERIZED INPUT NOISE VOLTAGE 10 RF = 100kΩ, RG = 100Ω 20 10 0 60 RF = 100kΩ, RG = 1kΩ ACL = 100 10 100 1k FREQUENCY (Hz) VS = ±5V & ±15V CL = 4pF RL = OPEN VOUT = 100mVP-P ACL = 10 RF = 100kΩ, RG = 10kΩ 40 30 20 0 RF = 0, RG = ∞ 10k 100k 1M 10M VS = ±5V & ±15V CL = 4pF RL = OPEN VOUT = 100mVP-P ACL = 10 RF = 100kΩ, RG = 10kΩ ACL = 1 -10 1k 100M RF = 0, RG = ∞ 10k 100k 1M 10M 100M FREQUENCY (Hz) FIGURE 48. CHARACTERIZED CLOSED LOOP GAIN vs FREQUENCY FIGURE 49. SIMULATED CLOSED LOOP GAIN vs FREQUENCY 0.15 0.15 VS = ±15V 0.10 AV = 1 RL = 2k CL = 4pF 0.05 VS = ±15V AV = 1 RL = 2k CL = 4pF 0.10 VOUT (V) 0.05 VOUT (V) 100k RF = 100kΩ, RG = 1kΩ FREQUENCY (Hz) 0 0 -0.05 -0.05 -0.10 -0.10 -0.15 10k RF = 100kΩ, RG = 100Ω ACL = 100 10 ACL = 1 -10 1k ACL = 1000 50 GAIN (dB) GAIN (dB) 30 1 70 ACL = 1000 50 40 0.1 FIGURE 47. SIMULATED INPUT NOISE VOLTAGE 70 60 VS = ±18V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TIME (µs) FIGURE 50. CHARACTERIZED SMALL SIGNAL TRANSIENT RESPONSE vs RL, VS = ±0.9V, ±2.5V 19 -0.15 0 0.2 0.4 0.6 0.8 1.0 TIME (µs) FIGURE 51. SIMULATED SMALL SIGNAL TRANSIENT RESPONSE vs RL, VS = ±0.9V, ±2.5V FN6639.1 December 8, 2010 ISL28110, ISL28210 Characterization vs Simulation Results (Continued) 6 6 VS = ±15V AV = 1 RL = 2k CL = 4pF 4 2 VOUT (V) VOUT (V) 2 0 0 -2 -2 -4 -4 -6 0 1 2 VS = ±15V AV = 1 RL = 2k CL = 4pF 4 3 4 5 6 7 8 9 -6 10 0 2 4 TIME (µs) PHASE GAIN 100 1k 10k 100k 1M 10M 100M 1G 200 180 160 140 120 100 80 60 40 20 0 -20 -40 -60 VS = ±15V -80 RL=1MΩ -100 0.1 1 10 FREQUENCY (Hz) 1M 10M FIGURE 56. SIMULATED (DESIGN) CMRR 20 CMRR (dB) PHASE GAIN 100 1k 10k 100k 1M 10M 100M 1G FIGURE 55. SIMULATED (SPICE) OPEN-LOOP GAIN, PHASE vs FREQUENCY CMRR (dB) 100 1k 10k 100k FREQUENCY (Hz) 10 FREQUENCY (Hz) FIGURE 54. SIMULATED (DESIGN) OPEN-LOOP GAIN, PHASE vs FREQUENCY 130 120 110 100 90 80 70 60 50 40 30 20 VS = ±15V 10 SIMULATION 0 0.1 1 10 8 FIGURE 53. SIMULATED LARGE SIGNAL TRANSIENT RESPONSE vs RL, VS = ±0.9V, ±2.5V GAIN (dB) GAIN (dB) FIGURE 52. CHARACTERIZED LARGE SIGNAL TRANSIENT RESPONSE vs RL, VS = ±0.9V, ±2.5V 200 180 160 140 120 100 80 60 40 20 0 -20 -40 -60 VS = ±15V -80 RL=1MΩ -100 0.1 1 10 6 TIME (µs) 100M 130 120 110 100 90 80 70 60 50 40 30 20 VS = ±15V 10 SIMULATION 0 0.1 1 10 100 1k 10k 100k FREQUENCY (Hz) 1M 10M 100M FIGURE 57. SIMULATED (SPICE) CMRR FN6639.1 December 8, 2010 ISL28110, ISL28210 Characterization vs Simulation Results (Continued) 15V OUTPUT VOLTAGE SWING (V) 5.0 10V 5V 0V 0 -5V -10V VS = ±5V -15V -5.0 0 0.2 0.4 0.6 0.8 1.0 TIME (m s) FIGURE 58. SIMULATED OUTPUT VOLTAGE SWING ±5V 21 0 0.2 0.4 0.6 0.8 1.0 TIME (m s) FIGURE 59. SIMULATED OUTPUT VOLTAGE SWING ±15V FN6639.1 December 8, 2010 ISL28110, ISL28210 Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you have the latest Rev. DATE REVISION 11/29/10 FN6639.1 11/23/10 CHANGE Removed label on right side of characterization curve, Figure 46 (Input Noise Current). Page 1 Updated Trademark statement Page 3 Ordering Information: Removed "coming soon" from ISL28110FBZ Page 4 Electrical Specifications: Added ISL28110 IB and IOS specs @ VS=±5V. Page 5 Electrical Specifications: Changed AVOL limits fro V/mV to dB Page 5 Electrical Specifications, Dynamic Performance, Slew Rate: Added "4V Step" to conditions; changed TYP limit from 23V/µs to 20V/µs Page 6 Electrical Specifications, Dynamic Performance, Slew Rate: Added "10V Step" to conditions; changed TYP limit from 23V/µs to 20V/µs Page 6 Electrical Specifications: Added ISL28110 IB and IOS specs @ VS= ±15V. Changed AVOL limits from V/mV to dB. Changed ts, settling time to 0.1% from 0.9µs to 1.3µs and changed ts, settling time to 0.01% from 1.2µs to 1.6µs. Page 7 Replaced Elect Spec table Notes 8 & 9 (Note 8 "Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested./Note 9 Limits established by characterization and are not production tested.)" With: "Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design." Page 8 Characteristic Curves: Added ISL28110 IB vs Temperature (Fig 4) Page 8 Characteristic Curves: Added ISL28110 IOS vs Temperature (Fig 6) Pages 17-21: Added PSPICE model section 9/13/10 FN6639.0 Initial Release. Products Intersil Corporation is a leader in the design and manufacture of high-performance analog semiconductors. The Company's products address some of the industry's fastest growing markets, such as, flat panel displays, cell phones, handheld products, and notebooks. Intersil's product families address power management and analog signal processing functions. Go to www.intersil.com/products for a complete list of Intersil product families. *For a complete listing of Applications, Related Documentation and Related Parts, please see the respective device information page on intersil.com: ISL28110, ISL28210 To report errors or suggestions for this datasheet, please go to www.intersil.com/askourstaff FITs are available from our website at http://rel.intersil.com/reports/search.php For additional products, see www.intersil.com/product_tree Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 22 FN6639.1 December 8, 2010 ISL28110, ISL28210 Package Outline Drawing L8.3x3A 8 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE Rev 4, 2/10 ( 2.30) 3.00 ( 1.95) A B 3.00 ( 8X 0.50) 6 PIN 1 INDEX AREA (4X) (1.50) ( 2.90 ) 0.15 PIN 1 TOP VIEW (6x 0.65) ( 8 X 0.30) TYPICAL RECOMMENDED LAND PATTERN SEE DETAIL "X" 2X 1.950 PIN #1 INDEX AREA 0.10 C 0.75 ±0.05 6X 0.65 C 0.08 C 1 SIDE VIEW 6 1.50 ±0.10 8 8X 0.30 ±0.05 8X 0.30 ± 0.10 2.30 ±0.10 C 4 0.10 M C A B 0 . 2 REF 5 0 . 02 NOM. 0 . 05 MAX. DETAIL "X" BOTTOM VIEW NOTES: 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to ASME Y14.5m-1994. 3. Unless otherwise specified, tolerance : Decimal ± 0.05 4. Dimension applies to the metallized terminal and is measured between 0.15mm and 0.20mm from the terminal tip. 5. Tiebar shown (if present) is a non-functional feature. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be 7. Compliant to JEDEC MO-229 WEEC-2 except for the foot length. either a mold or mark feature. 23 FN6639.1 December 8, 2010 ISL28110, ISL28210 Package Outline Drawing M8.118 8 LEAD MINI SMALL OUTLINE PLASTIC PACKAGE Rev 3, 3/10 5 3.0±0.05 A DETAIL "X" D 8 1.10 MAX SIDE VIEW 2 0.09 - 0.20 4.9±0.15 3.0±0.05 5 0.95 REF PIN# 1 ID 1 2 B 0.65 BSC GAUGE PLANE TOP VIEW 0.55 ± 0.15 0.25 3°±3° 0.85±010 H DETAIL "X" C SEATING PLANE 0.25 - 0.036 0.08 M C A-B D 0.10 ± 0.05 0.10 C SIDE VIEW 1 (5.80) NOTES: (4.40) (3.00) 1. Dimensions are in millimeters. (0.65) (0.40) (1.40) TYPICAL RECOMMENDED LAND PATTERN 24 2. Dimensioning and tolerancing conform to JEDEC MO-187-AA and AMSEY14.5m-1994. 3. Plastic or metal protrusions of 0.15mm max per side are not included. 4. Plastic interlead protrusions of 0.15mm max per side are not included. 5. Dimensions are measured at Datum Plane "H". 6. Dimensions in ( ) are for reference only. FN6639.1 December 8, 2010 ISL28110, ISL28210 Package Outline Drawing M8.15E 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE Rev 0, 08/09 4 4.90 ± 0.10 A DETAIL "A" 0.22 ± 0.03 B 6.0 ± 0.20 3.90 ± 0.10 4 PIN NO.1 ID MARK 5 (0.35) x 45° 4° ± 4° 0.43 ± 0.076 1.27 0.25 M C A B SIDE VIEW “B” TOP VIEW 1.75 MAX 1.45 ± 0.1 0.25 GAUGE PLANE C SEATING PLANE 0.10 C 0.175 ± 0.075 SIDE VIEW “A 0.63 ±0.23 DETAIL "A" (0.60) (1.27) NOTES: (1.50) (5.40) 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994. 3. Unless otherwise specified, tolerance : Decimal ± 0.05 4. Dimension does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25mm per side. 5. The pin #1 identifier may be either a mold or mark feature. 6. Reference to JEDEC MS-012. TYPICAL RECOMMENDED LAND PATTERN 25 FN6639.1 December 8, 2010