Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1982 Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● (1.45) 0.8 0.2 Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 (Ta=25˚C) +0.1 0.45–0.05 *1 Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO Peak collector current ICP Collector current Collector power dissipation Junction temperature Tj Storage temperature Tstg 5 V 100 mA IC 50 mA PC*1 1.0 W 150 ˚C –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 1 2.5±0.5 2 3 2.5±0.1 Symbol +0.1 2.5±0.5 Parameter 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. or more, and the board 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 1 µA Collector cutoff current ICBO VCB = 100V, IE = 0 Collector to emitter voltage VCEO IC = 0.1mA, IB = 0 150 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V *1 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) Noise voltage NV Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz *1h FE VCE = 5V, IC = 10mA 130 330 IC = 30mA, IB = 3mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 150 1 V 300 mV 160 MHz 5 pF Rank classification Rank R S hFE 130 ~ 220 185 ~ 330 1 2SC5346 Transistor IC — VCE 1.6 1.2 0.8 0.4 Ta=25˚C IB=10mA 150 Collector current IC (mA) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 9mA 8mA 7mA 6mA 5mA 4mA 3mA 120 90 2mA 1mA 60 30 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 Ta=75˚C 200 25˚C 150 –25˚C 100 50 0 Collector output capacitance Cob (pF) 6 VCE=5V 250 8 10 12 Cob — VCB 300 Forward current transfer ratio hFE 6 Collector to emitter voltage VCE (V) hFE — IC f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 1 3 10 30 100 300 Collector current IC (mA) 2 VCE(sat) — IC 180 1000 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 2.0 10 IC/IB=10 3 1 0.3 25˚C Ta=75˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 1 3 10 30 100 300 Collector current IC (mA) 1000