VO3150A Datasheet

VO3150A
Vishay Semiconductors
0.5 A Output Current IGBT and MOSFET Driver
FEATURES
• 0.5 A minimum peak output current
NC
1
8
VCC
• 25 kV/μs minimum common mode rejection
(CMR) at VCM = 1500 V
A
2
7
VO
• ICC = 2.5 mA maximum supply current
C
3
6
VO
• Under voltage
hysteresis
NC
4
5
VEE
• Wide operating VCC range: 15 V to 32 V
Shield
lock-out
(UVLO)
with
• 0.4 μs maximum propagation delay
20530_1
• Industrial temperature range: - 40 °C to 110 °C
V
D E
• 0.5 V maximum low level output voltage (VOL)
19813
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
APPLICATIONS
The VO3150A consists of a LED optically coupled to an
integrated circuit with a power output stage. This
optocoupler is ideally suited for driving power IGBTs and
MOSFETs used in motor control inverter applications. The
high operating voltage range of the output stage provides
the drive voltages required by gate controlled devices. The
voltage and current supplied by this optocoupler makes it
ideally suited for directly driving IGBTs with ratings up to 800
V/20 A. For IGBTs with higher ratings, the VO3150A can be
used to drive a discrete power stage which drives the IGBT
gate.
• Isolated IGBT/MOSFET gate driver
• AC and brushless DC motor drives
• Induction stove top
• Industrial inverters
• Switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
AGENCY APPROVALS
• UL - file no. E52744 system code H, double protection
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 (VDE0884) available with option 1
ORDERING INFORMATION
Option 7
DIP-8
V
O
3
1
5
0
A
-
X
PART NUMBER
0
0
7
PACKAGE OPTION
T
TAPE AND
REEL
7.62 mm
> 0.7 mm
PACKAGE
UL, cUL
DIP-8
VO3150A
-
VO3150A-X007T
VO3150A-X017T
SMD-8, option 7
UL, cUL, VDE
TRUTH TABLE
LED
Off
VCC - VEE
“POSITIVE GOING”
(TURN ON)
VCC - VEE
“NEGATIVE GOING”
(TURN OFF)
VO
0 V to 32 V
0 V to 32 V
Low
On
0 V to 11 V
0 V to 9.5 V
Low
On
11 V to 13.5 V
9.5 V to 12 V
Transition
On
13.5 V to 32 V
12 V to 32 V
High
Document Number: 81808
Rev. 1.1, 14-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
1
VO3150A
Vishay Semiconductors
0.5 A Output Current IGBT and
MOSFET Driver
ABSOLUTE MAXIMUM RATINGS
PARAMETER
(1)
(Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
VALUE
UNIT
IF
IF(TRAN)
VR
Pdiss
25
1
5
45
mA
A
V
mW
IOH(PEAK)
IOL(PEAK)
(VCC - VEE)
VO(PEAK)
Pdiss
0.5
0.5
0 to + 35
0 to + VCC
250
A
A
V
V
mW
VISO
5300
VRMS
TS
Tamb
Ptot
- 55 to + 125
- 40 to + 110
295
°C
°C
mW
Tsld
260
°C
INPUT
Input forward current
Peak transient input current
Reverse input voltage
Output power dissipation
< 1 μs pulse width, 300 pps
OUTPUT
High peak output current (2)
Low peak output current (2)
Supply voltage
Output voltage
Output power dissipation
OPTOCOUPLER
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)
t=1s
Storage temperature range
Ambient operating temperature range
Total power dissipation
Lead solder temperature (3)
for 10 s, 1.6 mm below seating plane
Notes
(1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
IO peak minimum = 0.5 A. See applications section for additional details on limiting IOH peak.
(3) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
RECOMMENDED OPERATING CONDITION
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
Power supply voltage
VCC - VEE
15
32
V
Input LED current (on)
IF
7
16
mA
Input voltage (off)
Operating temperature
www.vishay.com
2
VF(OFF)
-3
0.8
V
Tamb
- 40
+ 110
°C
For technical questions, contact: [email protected]
Document Number: 81808
Rev. 1.1, 14-Jan-10
VO3150A
0.5 A Output Current IGBT and
MOSFET Driver
Vishay Semiconductors
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
Pdiss
45
mW
Output power dissipation
Pdiss
250
mW
Total power dissipation
Ptot
285
mW
Maximum LED junction temperature
Tjmax.
125
°C
Maximum output die junction temperature
Tjmax.
125
°C
Thermal resistance, junction emitter to board
θJEB
169
°C/W
Thermal resistance, junction emitter to case
θJEC
192
°C/W
Thermal resistance, junction detector to board
θJDB
82
°C/W
Thermal resistance, junction detector to case
θJDC
80
°C/W
Thermal resistance, junction emitter to
junction detector
θJED
200
°C/W
TA
θCA
Package
TC
θEC
θDC
θDE
TJD
TJE
θDB
θEB
TB
θBA
19996
θCA
Thermal resistance, case to ambient
2645
TA
°C/W
Note
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal
Characteristics of Optocouplers application note.
ELECTRICAL CHARACTERISTICS
PARAMETER
(1)
TEST CONDITION
SYMBOL
MIN.
High level output current
IF = 16 mA, Rg = 10 Ω, Cg = 20 nF,
VCC = 15 V, VEE = 0 V
IOH (3)
0.5
A
Low level output current
IF = 0 mA, Rg = 10 Ω, Cg = 20 nF,
VCC = 15 V, VEE = 0 V
IOL (3)
0.5
A
High level output voltage
IO = - 100 mA
VOH (4)
VCC - 4
Low level output voltage
IO = 100 mA
VOL
High level supply current
Output open, IF = 7 mA to 16 mA
ICCH
Low level supply current
Output open, VF = - 3 V to + 0.8 V
ICCL
IO = 0 mA, VO > 5 V
IFLH
Threshold input current low to high
Threshold input voltage high to low
0.8
1
IF = 10 mA
VF
Temperature coefficient of forward
voltage
IF = 10 mA
ΔVF/ΔTA
Input reverse breakdown voltage
IR = 10 μA
BVΡ
Input capacitance
UVLO threshold
UVLO hysteresis
MAX.
VCC - 2.1
0.2
VFHL
Input forward voltage
TYP.
UNIT
V
0.5
V
2.5
mA
2.5
mA
2.1
5
mA
1.3
1.6
V
V
- 1.4
mV/°C
5
V
f = 1 MHz, VF = 0 V
CIN
VO ≥ 5 V
VUVLO+
11
12.6
13.5
V
IF = 10 mA
VUVLO-
9.5
10.7
12
V
60
UVLOHYS
1.9
pF
V
Notes
(1) Minimum and maximum values were tested over recommended operating conditions (T
amb = - 40 °C to 110 °C, IF(ON) = 7 mA to 16 mA,
VF(OFF) = - 3 V to 0.8 V, VCC = 15 V to 32 V, VEE = ground) unless otherwise specified. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at Tamb = 25 °C and with VCC - VEE = 32 V.
(2) Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %.
(3) Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with
IO peak minimum = 0.5 A.
(4) In this test V
OH is measured with a dc load current. When driving capacitive loads VOH will approach VCC as IOH approaches zero A. Maximum
pulse width = 1 ms, maximum duty cycle = 20 %.
Document Number: 81808
Rev. 1.1, 14-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
3
VO3150A
0.5 A Output Current IGBT and
MOSFET Driver
Vishay Semiconductors
TEST CIRCUITS
8
1
1
8
2
7
3
6
0.1 µF
0.1 µF
IF = 7 mA to
16 mA
2
7
3
6
+
100 mA
4V
+
+
VCC = 15 V
to 32 V
VOL
IOH
5
4
VCC = 15 V
to 32 V
4
20973_1
5
20974_1
Fig. 1 - IOH Test Circuit
Fig. 4 - VOL Test Circuit
8
1
0.1 µF
2
6
4
5
8
2
7
0.1 µF
IOL
7
3
1
+
2.5 V
VCC = 15 V
to 32 V
+
IF
VO > 5 V
+
3
6
4
5
VCC = 15 V
to 32 V
20976_1
20975_1
Fig. 2 - IOL Test Circuit
Fig. 5 - IFLH Test Circuit
8
1
8
1
0.1 µF
0.1 µF
2
VOH
7
2
IF = 7 mA
to 16 mA
+
3
VCC = 15 V
to 32 V
7
+
IF = 10 mA
VCC
VO > 5 V
6
3
6
4
5
100 mA
5
4
20978
20977_1
Fig. 3 - VOH Test Circuit
Fig. 6 - UVLO Test Circuit
SWITCHING CHARACTERISTICS
TEST CONDITION
SYMBOL
MIN.
Propagation delay time to logic
low output (1)
PARAMETER
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
duty cycle = 50 %
tPHL
Propagation delay time to logic
high output (1)
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
duty cycle = 50 %
tPLH
Pulse width distortion (2)
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
duty cycle = 50 %
PWD
Propagation delay difference
between any two parts (3)
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
duty cycle = 50 %
PDD (tPHL - tPLH)
Rise time
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
duty cycle = 50 %
tr
0.1
μs
Fall time
Rg = 47 Ω, Cg = 3 nF, f = 10 kHz,
duty cycle = 50 %
tf
0.1
μs
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4
TYP.
MAX.
UNIT
0.1
0.4
μs
0.1
0.4
μs
0.2
μs
0.35
μs
- 0.35
For technical questions, contact: [email protected]
Document Number: 81808
Rev. 1.1, 14-Jan-10
VO3150A
0.5 A Output Current IGBT and
MOSFET Driver
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
UVLO turn on delay
VO > 5 V, IF = 10 mA
TUVLO-ON
0.8
μs
UVLO turn off delay
VO > 5 V, IF = 10 mA
TUVLO-OFF
0.6
μs
Notes
(1) This load condition approximates the gate load of a 1200 V/25 A IGBT.
(2) Pulse width distortion (PWD) is defined as |t
PHL - tPLH| for any given device.
(3) The difference between t
PHL and tPLH between any two VO3150A parts under the same test condition.
8
1
0.1 µF
I F = 7 mA to 16 mA
+
2
500 Ω
IF
+
7
VCC = 15 V
to 32 V
tf
tr
VO
10 kHz
50 % duty
cycle
3
6
4
5
90 %
47 Ω
50 %
3 nF
10 %
OUT
t PHL
t PLH
20979_1
Fig. 7 - tPLH, tPHL, tr and tf Test Circuit and Waveforms
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
SYMBOL
MIN.
TYP.
Common mode transient immunity TA = 25 °C, IF = 10 mA to 16 mA,
at logic high output (1)(2)
VCM = 1500 V, VCC = 32 V
TEST CONDITION
|CMH|
25
35
kV/μs
Common mode transient immunity
at logic low output (1)(3)
|CML|
25
35
kV/μs
TA = 25 °C, VCM = 1500 V,
VCC = 32 V, VF = 0 V
MAX.
UNIT
Notes
(1) Pins 1 and 4 need to be connected to LED common.
(2) Common mode transient immunity in the high state is the maximum tolerable |dV
CM/dt| of the common mode pulse, VCM, to assure that the
output will remain in the high state (i.e., VO > 15 V).
(3) Common mode transient immunity in a low state is the maximum tolerable |dV
CM/dt| of the common mode pulse, VCM, to assure that the
output will remain in a low state (i.e., VO < 1 V).
5V
dt
0.1 µF
A
R
dV
8
1
IF
VO
3
6
4
5
VCM
Dt
0V
7
2
+
=
Dt
+
VCC = 32 V
VO
VOH
Switch at A: IF = 10 mA
VO
VOL
+
Switch at B: IF = 0 mA
20980-1
VCM = 1500 V
Fig. 8 - CMR Test Circuit and Waveforms
Document Number: 81808
Rev. 1.1, 14-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
5
VO3150A
0.5 A Output Current IGBT and
MOSFET Driver
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Climatic classification
(according to IEC 68 part 1)
MAX.
UNIT
40/110/21
Comparative tracking index
CTI
175
399
VIOTM
8000
V
VIORM
890
V
PSO
500
mW
ISI
300
mA
TSI
175
7
°C
Creepage distance
Standard DIP-8
mm
Clearance distance
Standard DIP-8
7
mm
Creepage distance
400 mil DIP-8
8
mm
Clearance distance
400 mil DIP-8
8
mm
Note
• As per IEC 60747-5-5, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of prodective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
- 0.5
- 1.0
0.35
VOL - Output Low Voltage (V)
VOH - VCC - High Output
Voltage Drop (V)
0.0
IF = 16 mA
IOUT = - 100 mA
VCC = 32 V
VEE = 0 V
- 1.5
- 2.0
- 2.5
- 3.0
- 40 - 20
0
20
40
60
IOL - Output Low Current (A)
IOH - High Output Current (A)
VF(OFF) = 0.8 V
IOUT = 100 mA
VCC = 32 V
VEE = 0 V
0.10
0.05
0
20
40
60
80 100 120
Temperature (°C)
2.5
IF = 16 mA
Rg = 10 Ω, Cg = 20 nF
VCC = 15 V
VEE = 0 V
1.5
1.0
0.5
0.0
- 40 - 20
0
20
40
60
80 100 120
Temperature (°C)
Fig. 10 - High Output Current vs. Temperature
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6
0.15
Fig. 11 - Output Low Voltage vs. Temperature
2.5
21759
0.20
21707-1
Fig. 9 - High Output Voltage Drop vs. Temperature
2.0
0.25
0.00
- 40 - 20
80 100 120
Temperature (°C)
21705-1
0.30
2.0
IF = 0 mA
Rg = 10 Ω, Cg = 20 nF
VCC = 15 V
VEE = 0 V
1.5
1.0
0.5
0.0
- 40 - 20
21760
0
20
40
60
80
100
Temperature (°C)
Fig. 12 - Output Low Current vs. Temperature
For technical questions, contact: [email protected]
Document Number: 81808
Rev. 1.1, 14-Jan-10
VO3150A
0.5 A Output Current IGBT and
MOSFET Driver
2.5
IF = 0 mA
VCC = 15 V
VEE = 0 V
1.5
25 °C
110 °C
1
- 40 °C
0.5
ICC - Supply Current (mA)
VOL - Output Low Voltage (V)
2
0.0
0.2
0.4
0.6
2.0
1.5
ICCH
1.0
ICCL
0.5
0.8
IOL - Output Low Current (A)
21761
15
20
25
30
35
VCC - Supply Voltage (V)
21711
Fig. 16 - Supply Current vs. Supply Voltage
Fig. 13 - Output Low Voltage vs. Output Low Current
-1
5.0
IF = 16 mA
VCC = 15 V
VEE = 0 V
- 1.5
-2
- 40 °C
- 2.5
25 °C
110 °C
0.2
0.4
0.6
Fig. 14 - Output High Voltage Dropvs. Output High Current
3.5
3.0
2.5
2.0
1.5
1.0
0.0
- 40 - 20
0.8
IOH - Output High Current (A)
4.0
0.5
-3
0
VCC = 32 V
VEE = 0 V
Output = open
4.5
IFLH - Low to High
Current Threshold (mA)
(VOH - VCC) Output High Voltage
Drop (V)
IF = 10 mA for ICCH
IF = 0 mA for ICCL
TA = 25 °C
VEE = 0 V
0.0
0
21762
Vishay Semiconductors
0
20
40
60
80 100 120
Temperature (°C)
21712-1
Fig. 17 - Low to High Current Threshold vs. Temperature
35
2.5
VO - Output Voltage (V)
ICC - Supply Current (mA)
TA = 25 °C
2.0
ICCH
1.5
ICCL
1.0
0.5
IF = 16 mA for ICCH
IF = 0 mA for ICCL
VCC = 32 V
VEE = 0 V
0.0
- 40 - 20
21710-1
30
25
20
15
10
5
0
0
20
40
60
Temperature (°C)
Fig. 15 - Supply Current vs. Temperature
Document Number: 81808
Rev. 1.1, 14-Jan-10
0
80 100 120
21752
1
2
3
4
5
IF - Forward LED Current (mA)
Fig. 18 - Transfer Characteristics
For technical questions, contact: [email protected]
www.vishay.com
7
VO3150A
0.5 A Output Current IGBT and
MOSFET Driver
Vishay Semiconductors
500
IF = 10 mA, TA = 25 °C
Rg = 47 Ω, Cg = 3 nF
Duty cycle = 50 %
f = 10 kHz
400
tp - Propagation Delay (ns)
tp - Propagation Delay (ns)
500
300
tPHL
200
tPLH
400
300
tPLH
200
tPHL
100
100
0
15
20
25
30
35
VCC - Supply Voltage (V)
21736
0
10
20
30
40
50
Rg - Series Load Resistance (Ω)
21739
Fig. 19 - Propagation Delay vs. Supply Voltage
Fig. 22 - Propagation Delay vs. Series Load Resistance
500
VCC = 32 V, VEE = 0 V
IF = 10 mA
Rg = 47 Ω, Cg = 3 nF
Duty cycle = 50 %
f = 10 kHz
400
tp - Propagation Delay (ns)
500
tp - Propagation Delay (ns)
VCC = 30 V, VEE = 0 V
IF = 10 mA, TA = 25 °C
Cg = 3 nF
Duty cycle = 50 %
f = 10 kHz
tPHL
300
200
tPLH
100
0
- 40
400
300
tPLH
200
tPHL
100
0
- 15
10
35
60
85
110
TA - Temperature (°C)
21737
VCC = 30 V, VEE = 0 V
IF = 10 mA, TA = 25 °C
Rg = 47 Ω
Duty cycle = 50 %
f = 10 kHz
0
21740
Fig. 20 - Propagation Delay vs. Temperature
20
40
60
80
100
Cg - Series Load Capacitance (nF)
Fig. 23 - Propagation Delay vs. Series Load Capacitance
tp - Propagation Delay (ns)
500
VCC = 30 V, VEE = 0 V
IF = 10 mA, TA = 25 °C
Rg = 47 Ω, Cg = 3 nF
Duty cycle = 50 %
f = 10 kHz
400
300
tPHL
200
tPLH
100
0
6
21738
8
10
12
14
16
IF - Forward LED Current (mA)
Fig. 21 - Propagation Delay vs. Forward LED Current
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8
For technical questions, contact: [email protected]
Document Number: 81808
Rev. 1.1, 14-Jan-10
VO3150A
0.5 A Output Current IGBT and
MOSFET Driver
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Pin one ID
4
3
2
1
5
6
7
8
6.48
6.81
ISO method A
9.63
9.91
0.76
1.14
7.62 typ.
0.79
4° typ.
3.30
3.81
1.27
0.46
0.56
10°
0.51
0.89
2.79
3.30
3° to 9°
5.84
6.35
0.2
0.3
2.54 typ.
i178006
Option 7
7.62 typ.
0.7
4.6
4.1
8 min.
8.4 min.
10.3 max.
18450-4
PACKAGE MARKING
VO3150A
V YWW H 68
21764-43
Note
• VDE logo is only marked on option 1 parts. Option information is not marked on the part.
Document Number: 81808
Rev. 1.1, 14-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
9
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000