VISHAY VO3053

VO3052/VO3053
Vishay Semiconductors
Optocoupler, Non Zero Crossing Phototriac, 1.5 kV/µs dV/dt, 600 V
Features
• 1500 V/µs dV/dT minimum,
2000 V/µs typical
• 600 V Blocking Voltage
• Low Input Trigger Current
• 6 pin DIP package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
thdip67
A 1
6 MT2
C 2
5 NC
NC 3
4 MT1
i179041
Agency Approvals
Description
• UL - File E52744 H/J System Code
• CUL - File No. E52744, equivalent to
CSA bulletin 5A
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
The VO3052/VO3053 triac driver family consists of a
GaAs infrared LED optically coupled to a monolithic
photosensitive non zero crossing triac detector chip.
The 600 V blocking voltage permits control of off-line
voltages up to 240 VAC, with a safety factor or more
than two, and is sufficient for as much as 380 V.
Applications
Order Information
•
•
•
•
•
•
Household Appliances
Triac Drive/AC Motor Drives
Solenoid/Valve Controls
Office Automation Equipment / Machine
Temperature (HVAC)/Lighting Controls
Switching Power Supply
Part
Remarks
VO3053
DIP-6, NZC, 600 V, Ift = 5 mA
VO3052
DIP-6, NZC, 600 V, Ift = 10 mA
VO3053-X006
DIP-6 400 mil (option 6), NZC, 600 V, Ift = 5 mA
VO3052-X006
DIP-6 400 mil (option 6), NZC, 600 V, Ift = 10 mA
VO3053-X007T SMD-6 (option 7), NZC, 600 V, Ift = 5 mA
VO3052-X007T SMD-6 (option 7), NZC, 600 V, Ift = 10 mA
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6.0
V
Forward current - continuous
IF
60
mA
Pdiss
100
mW
Power dissipation
Document Number 83749
Rev. 1.5, 07-Nov-06
Test condition
Unit
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VO3052/VO3053
Vishay Semiconductors
Output
Parameter
Test condition
Off state output terminal voltage
Peak repetitive surge current
Part
Symbol
Value
Unit
VO3052/3053
VDRM
600
V
ITSM
1.0
A
Pdiss
150
mW
PW = 100 ms, 120 pps
Power dissipation
Coupler
Parameter
Test condition
Symbol
Value
Unit
VISO
5300
VRMS
Total power dissipation
Ptot
250
mW
Operating temperature
Tamb
- 40 to + 100
°C
Storage temperature
Tstg
- 55 to + 150
°C
Tsld
260
°C
Isolation test voltage
1.0 sec
Soldering temperature
10 sec
110
IF = 5 mA
Load Current (mA)
100
90
IF = 20 mA
80
IF = 10 mA
70
60
50
- 40 - 20
20334
0
20
40
60
80
100
Temperature (°C)
Figure 1. On State Current vs. Temperature
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Document Number 83749
Rev. 1.5, 07-Nov-06
VO3052/VO3053
Vishay Semiconductors
Thermal Characteristics
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.
Test condition
Symbol
Value
Unit
LED Power dissipation
Parameter
at 25 °C
Pdiss
100
mW
Output Power dissipation
at 25 °C
Pdiss
500
mW
Total Power dissipation
at 25 °C
Ptot
600
mW
Maximum LED junction temperature
Tjmax
125
°C
Maximum output die junction temperature
Tjmax
125
°C
Thermal resistance, Junction Emitter to Board
θJEB
150
°C/W
Thermal resistance, Junction Emitter to Case
θJEC
139
°C/W
Thermal resistance, Junction Detector to Board
θJDB
78
°C/W
Thermal resistance, Junction Detector to Case
θJDC
109
°C/W
Thermal resistance, Junction Emitter to Junction Detector
θJED
496
°C/W
Thermal resistance, Case to Ambient
θCA
9563
°C/W
TA
θCA
Package
TC
θEC
θDC
θDE
TJD
TJE
θDB
θEB
TB
θBA
19996
TA
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Reverse current
VR = 6 V
IR
Forward voltage
IF = 30 mA
VF
Document Number 83749
Rev. 1.5, 07-Nov-06
Min
Typ.
1.2
Max
Unit
10
µA
1.5
V
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VO3052/VO3053
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
Leakage with LED off, either
direction
VDRM = 600 V
IDRM
Critical rate of rise of off-state
voltage
VD = 400 V
dV/dt
Min
1500
Typ.
Max
Unit
10
500
nA
2000
V/µs
Coupler
Parameter
Test condition
LED trigger current, current
required to latch output
Part
Symbol
VO3053
IFT
VO3052
Peak on-state voltage, either
direction
ITM = 100 mA Peak,
IF = Rated IFT
Holding current, either direction
Min
Typ.
Max
Unit
5
mA
10
mA
3
V
IFT
VTM
1.7
IH
200
µA
Saftey and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
safety ratings shall be ensured by means of protective circuits.
Parameter
Climatic classification
Test condition
Symbol
Min
IEC 68 part 1
Pollution degree
DIN VDE 0109
Tracking resistance
(Comparative tracking index)
Insulation group Illa
Typ
Max
Unit
40/100/21
2
CTI
175
Highest allowable overvoltage
Transient overvoltage
VIOTM
8000
Vpeak
Maximum working insulation
voltage
Recurring peak voltage
VIORM
890
Vpeak
Insulation resistance at 25 °C
VIO = 500 V
RIS
≥ 1012
Ω
Ω
Insulation resistance at TS
VIO = 500 V
RIS
≥ 10
Insulation resistance at 100 °C
VIO = 500 V
RIS
≥ 1012
Ω
Partial discharge test voltage
Method a, Vpd = VIORM x 1.875
Vpd
1669
Vpeak
175
250
500
°C
mA
mW
Safety limiting values Maximum values allowed in the
event of a failure:
Case temperature
Input current
Output power
TSI
ISI
PSO
12
Minimum external air gap
(Clearance)
Measured from input terminals
to output terminals, shortest
distance through air
≥7
mm
Minimum external tracking
(Creepage)
Measured from input terminals
to output terminals, shortest
distance path along body
≥7
mm
Minimum external air gap
(Clearance)
Measured from input terminals
to output terminals, shortest
distance through air
≥8
mm
Minimum external tracking
(Creepage)
Measured from input terminals
to output terminals, shortest
distance path along body
≥8
mm
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Document Number 83749
Rev. 1.5, 07-Nov-06
VO3052/VO3053
VISHAY
Vishay Semiconductors
1.4
1.5
- 40 °C
1.2
1.1
0.9
25 °C
1.0
Normalized IFT
Forward LED Voltage (V)
1.3
85 °C
0.8
0.6
0.4
0.7
0.2
0.0
0.5
1
20335
10
- 40
100
Forward LED Current (mA)
Figure 2. Forward Voltage vs. Forward Current
100
60
Figure 5. Normalized Trigger Current vs. Temperature
1000
Turn-on Time (µs)
100
IIkg (nA)
100
10
1
- 40 - 20
20337
10
1
0
20
40
60
80
5
100
Temperature (°C)
7
20341
9
11
13
15
LED Current (mA)
Figure 6. Turn-On Time vs. LED Current
Figure 3. Off-State Leakage Current vs. Temperature
100
2.0
80
1.8
60
1.6
40
Normalized Ih
On State Current ITM (mA)
10
Temperature (°C)
20340
20
0
- 20
- 40
1.4
1.2
1.0
0.8
- 60
0.6
- 80
- 100
0.4
- 2 - 1.5 - 1 - 0.5 0
0.5
1
1.5
On State Voltage_VTM (V)
20338
Figure 4. On State Current vs. VTM
Document Number 83749
Rev. 1.5, 07-Nov-06
- 40 - 20
2
20342
0
20
40
60
80
100
Temperature (°C)
Figure 7. Normalized Holding Current vs. Temperature
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5
VO3052/VO3053
VISHAY
25
5.0
20
4.8
15
4.6
IFT (mA)
Turn-On Time (µs)
Vishay Semiconductors
10
5
4.4
4.2
0
- 40 - 20
20339
4.0
0
20
40
60
80
100
30
Temperature (°C)
20343
Figure 8. Turn-On Time vs. Temperature
45
60
75
90
100
Pulse Width (µs)
Figure 9. Trigger Current vs. Pulse Width
Package Dimensions in Inches (mm)
Option 6
pin one ID
3
2
1
4
5
6
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.248 (6.30)
0.256 (6.50)
ISO Method A
0.335 (8.50)
20°
0.343 (8.70)
0.039
(1.00 )
Min .
typ .
0.130 (3.30)
0.150 (3.81)
Option 7
4°
typ .
18°
0.033 (0.84) typ.
0.018 (0.46)
0.020 (0.51)
i178014_1
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.300 (7.62)
0.048 (1.22)
0.052 (1.32)
0.033 (0.84) typ.
0.100 (2.54) typ.
3° - 9°
0.008 (0.20)
0.012 (0.30)
0.300 - 0.347
(7.62–8.81)
0.300 (7.62)
TYP.
0.130 (3.30)
0.150 (3.81)
0.028 (0.7)
MIN.
0.180 (4.6)
0.160 (4.1)
0.315 (8.0)
MIN.
0.331 (8.4)
MIN.
0.406 (10.3)
MAX.
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Document Number 83749
Rev. 1.5, 07-Nov-06
VO3052/VO3053
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83749
Rev. 1.5, 07-Nov-06
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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