MSFM Datasheet

MSFM
www.vishay.com
Vishay Electro-Films
Thin Film, Top-Contact Miniature Resistor
FEATURES
• Wire bondable
• Small size: 0.015" square
• Case: 0101
• Wide value range: 2.5  to 400 k
• DC power rating up to 125 mW
• Self passivating tantalum nitride film
Product may not be to scale
The MSFM series of single-value precision resistors chips
offer a small size, wide ohmic value range and high power
rating. The MSFM tantalum nitride resistor material offers
excellent resistance to high moisture environments. The
MSFMs are manufactured using Vishay Electro-Films (EFI)
sophisticated thin-film equipment and manufacturing
technology. The MSFMs are 100 % electrically tested and
visually inspected to MIL-STD-883, method 2032, class H
or K.
• Oxidized silicon substrate
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Vishay EFI MSFM top-contact 0.015" square resistor chips
are designed for hybrid (chip and wire) assemblies. They are
ideally suited for compact designs due to their ultra small
form factor.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES, AND TOLERANCES
PARAMETER
VALUE

± 0.1, ± 0.5, ± 1
%
± 25, ± 50, ± 100, ± 250
ppm/°C
Standard Tolerances
TCR
UNIT
2.5 to 400K
Total Resistance Range
Tightest Standard Available Tolerance and TCR
± 1 % ± 0.5 %
± 0.1 %
± 25 ppm/°C
± 50 ppm/°C
± 100 ppm/°C
± 250 ppm/°C
2.5 Ω 10 Ω
30 Ω
100 Ω
400 kΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
VALUE
UNIT
-35
-20
dB
Moisture Resistance, MIL-STD-202 Method 106
± 0.5 max. R/R
%
Stability, 1000 h, +70 °C, 125 mW
± 0.5 max. R/R
%
-55 to + 125
°C
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
± 0.2 max. R/R
%
High Temperature Exposure, +150 °C, 100 h
± 0.5 max. R/R
%
Noise, MIL-STD-202, Method 308
> 100  
< 100 
Operating Temperature Range
Dielectric Voltage Breakdown
200
V
Insulation Resistance
1012 min.

Operating Voltage
100 max.
V
0.125
W
± 0.25 max. R/R
%
DC Power Rating up to +70 °C 
(Linear de-erated to zero at +175 °C)
5x Rated Power Short-Time Overload, +25 °C, 5 s
Revision: 26-Jan-15
Document Number: 61096
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MSFM
www.vishay.com
Vishay Electro-Films
DIMENSIONS in inches
0.004
0.0015
MECHANICAL SPECIFICATIONS
PARAMETER
VALUE
Chip Size
0.015" x 0.015" ± 0.002" (0.381 mm x 0.381 mm ± 0.05 mm)
Chip Thickness
0.010" ± 0.002" (0.254 mm ± 0.05 mm)
Chip Substrate Material
Oxidized silicon, 10 kÅ minimum oxide
Resistor Material
Tantalum nitride, self-passivating
Bonding Pad Size
0.004" x 0.004" (0.1 mm x 0.1 mm)
Number of Pads
2
Pad Material
10 kÅ minimum aluminum (Au optional)
Backing
None, lapped silicon
POWER DERATING CURVE
140
(70, 125)
Power (mW)
120
100
80
60
40
20
0
- 100
- 50
0
50
100
Temperature (°C)
150
200
GLOBAL PART NUMBER INFORMATION
Global Part Number: MSFM10001FKANHWS
Global Part Number Description: MSFM 10K 1 %, 100 ppm/°C, Al, no back metal, class H, WS
M
S
F
MODEL
RESISTANCE
MSFM
First 4
digits are
significant
figures of
resistance
15 x 15
size
Ta2N on
silicon
Revision: 26-Jan-15
M
1
RESISTANCE
MULTIPLIER
CODE
C = 0.001
B = 0.01
A = 0.1
0=1
1 = 10
2 = 100
3 = 1000
0
0
0
TOLERANCE
CODE
(%)
B = 0.1
C = 0.25
D = 0.5
F = 1.0
G = 2.0
H = 2.5
J = 5.0
K = 10.0
1
TCR
(ppm/°C)
E = ± 25
C = ± 50
K = ± 100
M = ± 250
F
K
A
N
H
W
S
TERMINATION
BACK
METAL
VISUAL
CLASS
PACKAGING
CODE
G = Au
A = Al
G = Au
N = None
H = Class H
K = Class K
WS =
Waffle pack
100 min., 1 mult
Document Number: 61096
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000