TA 33 Datasheet

TA 33
www.vishay.com
Vishay Sfernice
Wirebondable Dual Value Thin Film Chip Resistor Networks,
Center Tap
FEATURES
• Center tap feature
• Resistor material: Self-passivating 
Tantalum nitride
• Silicon substrate for good power dissipation
• Wirebondable
Actual Size
These tantalum chips combine excellent stability 0.07 %
(2000 h, rated power at + 70 °C) with great power handling
capacity. Two bonding pads per termination allow greater
flexibility in hybrid layout design.
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
SCHEMATIC
RT
R1
R2
RT = R1 + R2 with R1 = R2 Standard
STANDARD ELECTRICAL SPECIFICATIONS
MODEL
SIZE
RESISTANCE
RANGE (1)

POWER RATING
P70 °C
W
ABSOLUTE
TOLERANCE
±%
RATIO
TOLERANCE
±%
ABSOLUTE
TCR (2)
± ppm/°C
RATIO
TCR
± ppm/°C
TA 33
0303
50 to 1M
0.125
0.5, 1, 2
0.1, 0.5
50, 100
5
Notes
(1) (R = R + R )
T
1
2
(2) ± 100 ppm/°C, ± 50 ppm/°C on request at - 55 °C to + 155 °C
PERFORMANCES
TEST
SPECIFICATIONS
Ohmic value: Ratio
Stability
± 0.07 % typical, ± 0.1 maximum
Limiting voltage
< - 35 dB typical
Thermal EMF
MIL-STD-202 method 308
0.01 μV/°C
100 ppm
CLIMATIC SPECIFICATIONS
- 55 °C to + 155 °C
- 55 °C to + 155 °C
1 year at + 25 °C
DERATING
Rated Power in %
Shelf life stability
Storage temperature range
2000 h at + 70 °C under Pn
50 VDC on RT
Noise
Operating temperature
range
CONDITIONS
1/1 standard (unequal values: please consult)
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Ambient Temperature in °C
Revision: 17-Aug-12
Document Number: 60066
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TA 33
www.vishay.com
Vishay Sfernice
DIMENSIONS
DIMENSION
B
Bonding Pad Area
D
A
INCHES
MILLIMETERS
A
0.033 ± 0.004
0.855 ± 0.10
B
0.033 ± 0.004
0.855 ± 0.10
C
0.01 to 0.015
0.25 to 0.40
D
0.006
0.15
E
0.004
0.10
F
0.006
0.15
E
C
F
MECHANICAL SPECIFICATIONS
Resistive element
Tantalum nitride
Substrate material
Silicon
Passivation
Selfpassivation
Bonding pads
Aluminum, gold on request
GLOBAL PART NUMBER INFORMATION
New Global Part Numbering: TA33-5K2F25KD0099 (preferred part number format)
T
A
GLOBAL MODEL
Revision: 17-Aug-12
3
3
-
5
K
2
F
2
5
K
D
0
0
9
9
R1 VALUE
ABS. TOLERANCE
R2 VALUE
RAT. TOLERANCE
OPTION
Decimal
R, K, or M
D = ± 0.5 %
F = ± 1.0 %
G = ± 2.0 %
Decimal
R, K, or M
B = ± 0.1 %
D = ± 0.5 %
Leave blank
if no option
Document Number: 60066
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000