VO615C Datasheet

VO615C
www.vishay.com
Vishay Semiconductors
Low Input Current Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
FEATURES
A
1
4
C
C
2
3
E
•
•
•
•
•
•
•
•
•
•
22647
DESCRIPTION
The 110 °C rated VO615C series feature a high current
transfer ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared diode emitter,
which
is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
Copper lead-frame
Operating temperature from -55 °C to +110 °C
Isolation test voltage, 5300 VRMS
High collector emitter voltage, VCEO = 80 V
Low saturation voltage
Fast switching times
Low CTR degradation
Low coupling capacitance
End stackable, 0.100" (2.54 mm) spacing
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
•
AC adapters
SMPS
PLC
Factory automation
Game consoles
AGENCY APPROVALS
The safety application model number covering all products
in this datasheet is VO615C. This model number should be
used when consulting safety agency documents.
• UL1577, file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884), available with option 1
• FIMKO EN60065 and EN60950-1, file no. FI 27409
• CQC GB8898-2001
ORDERING INFORMATION
V
O
6
1
5
C
-
#
PART NUMBER
X
CTR
BIN
0
#
#
DIP-4
Option 6
7.62 mm
10.16 mm
T
PACKAGE OPTION
TAPE
AND
REEL
Option 9
> 8 mm
CTR (%)
AGENCY CERTIFIED/PACKAGE
UL, cUL, FIMKO, CQC
DIP-4
VDE, UL, cUL, FIMKO, CQC (option 1)
DIP-4, 400 mil, option 6
SMD-4, option 9
10 mA
40 to 80
63 to 125
100 to 200
VO615C-1
-
-
160 to 320
-
40 to 80
63 to 125
100 to 200
160 to 320
-
VO615C-2X016
VO615C-3X016
VO615C-4X016
-
VO615C-2X019T,
VO615C-2X019T1 (1)
-
-
Notes
• Additional options may be available, please contact the sales office.
(1) T1 rotation in tape and reel packaging.
Rev. 1.3, 17-Sep-14
Document Number: 83500
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO615C
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
tp  10 μs
IFSM
1.5
A
at 25 °C
Pdiss
70
mW
Collector emitter voltage
VCEO
80
V
Emitter collector voltage
VECO
7
V
50
mA
Forward surge current
Power dissipation
OUTPUT
Collector current
tp  1 ms
IC
100
mA
Output power dissipation
at 25 °C
Pdiss
150
mW
t = 1 min
COUPLER
Isolation test voltage (RMS)
VISO
5300
VRMS
Total power dissipation
Ptot
200
mW
Operation temperature
Tamb
-55 to +110
°C
Storage temperature range
Tstg
-55 to +150
°C
Tj
125
°C
Tsld
260
°C
Junction temperature
Soldering temperature
2 mm from case,  10 s
(1)
450
400
350
Phototransistor
Psi (mW)
300
250
200
IR-diode
Isi (mA)
150
100
50
0
0
25
50
75
100
125
150
175
Tsi - Safety Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Safety Temperature
Rev. 1.3, 17-Sep-14
Ptot - Total Power Dissipation (mW)
Ptot - Total Power Dissipation (mW)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD), and wave profile for soldering conditions for through hole
devices (DIP), please go to “Assembly Instructions” (www.vishay.com/doc?80054).
250
Coupled device
200
150
100
Phototransistor
50
IR-diode
0
0
25
50
75
100
125
Tamb - Ambient Temperature (°C)
Fig. 2 - Total Power Dissipation vs. Ambient Temperature
Document Number: 83500
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO615C
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Forward voltage
IF = 60 mA
Reverse current
VR = 6 V
MIN.
TYP.
MAX.
UNIT
VF
1.35
1.6
V
IR
0.01
10
μA
VR = 0 V, f = 1 MHz
Cj
9
INPUT
Junction capacitance
pF
OUTPUT
Collector emitter leakage current
VCE = 10 V
ICEO
0.3
VCE = 5 V, f = 1 MHz
CCE
2.8
Collector emitter breakdown voltage
IC = 1 mA
BVCEO
80
V
Emitter collector breakdown voltage
IE = 100 μA
BVECO
7
V
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
f = 1 MHz
CC
0.4
pF
IF = 10 mA, VCC = 5 V, RL = 100 
fctr
110
kHz
Collector emitter capacitance
100
nA
pF
COUPLER
Collector emitter saturation voltage
Coupling capacitance
Cut-off frequency
0.4
V
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
IC/IF
TEST CONDITION
IF = 10 mA, VCE = 5 V
PART
SYMBOL
MIN.
MAX.
UNIT
VO615C-1
CTR
40
TYP.
80
%
VO615C-2
CTR
63
125
%
VO615C-3
CTR
100
200
%
VO615C-4
CTR
160
320
%
MAX.
UNIT
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
NON-SATURATED
Rise time
tr
3
μs
Fall time
tf
3
μs
ton
6
μs
toff
4
μs
IC = 2 mA, VCC = 5 V, RL = 100 
Turn-on time
Turn-off time
VCC = 5 V
Input
Input pulse
RL
VOUT
10 %
Output pulse
90 %
tr
t on
Fig. 3 - Test Circuit
Rev. 1.3, 17-Sep-14
tf
t off
Fig. 4 - Test Circuit and Waveforms
Document Number: 83500
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO615C
www.vishay.com
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Output safety power
PSO
700
mW
Input safety current
Isi
400
mW
Safety temperature
TS
175
°C
Comparative tracking index
CTI
175
MAXIMUM SAFETY RATINGS
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
VISO
5300
VRMS
VIOTM
8000
Vpeak
VIORM
565
Vpeak
VIORM (1)
1140
Vpeak
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Insulation resistance
Tamb = 25 °C, VDC = 500 V
RIO
 1012

Isolation resistance
Tamb = 100 °C, VDC = 500 V
RIO
 1011

Climatic classification (according to IEC 68 part 1)
55/110/21
Environment (pollution degree in accordance to DIN VDE 0109)
Internal and external creepage
Clearance
2
Standard DIP-4
7
mm
400 mil DIP-4
8
mm
Standard DIP-4
7
mm
400 mil DIP-4
8
mm
0.4
mm
Insulation thickness
Notes
• As per DIN EN 60747-5-5, 2, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of protective circuits.
(1) Only for option 6.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
60
IC - Collector Current (mA)
IF - Forward Current (mA)
Tamb = 25 °C
Tamb = 50 °C
10
Tamb = 75 °C
Tamb = 0 °C
Tamb = 110 °C
1
Tamb = -40 °C
IF = 35 mA
50
IF = 30 mA
IF = 25 mA
40
IF = 20 mA
30
IF = 15 mA
20
IF = 10 mA
10
IF = 5 mA
Tamb = -55 °C
0.1
IF = 1 mA
0
0.6
0.8
1.0
1.2
1.4
1.6
VF - Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
Rev. 1.3, 17-Sep-14
0
1
2
3
4
5
6
7
8
9
10
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Current vs. Collector Emitter Voltage (NS)
Document Number: 83500
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO615C
www.vishay.com
Vishay Semiconductors
1.2
ICE0 - Leakage Current (nA)
IF = 0 mA
1000
VCE = 40 V
100
10
1
VCE = 24 V
0.1
VCE = 12 V
0.01
NCTR - Normalized CTR (sat)
10 000
0.001
1.0
0.8
0.6
0.4
0.2
0.0
-60 -40 -20
0
20
40
60
80
IF = 10 mA
Normalized to CTR value:
IF = 10 mA, VCE = 5 V, Tamb = 25 °C
-60 -40 -20
100
Tamb - Ambient Temperature (°C)
IC - Collector Current (mA)
25
IF = 25 mA
20
15
IF = 10 mA
10
IF = 5 mA
5
IF = 2 mA
0
0
0.1
0.2
0.3
1.2
0.8
0.6
Tamb = 75 °C
0.4
Tamb = 110 °C
0.2
I
0.0
Normalized to CTR value:
F = 10 mA, VCE = 5 V, Tamb = 25 °C
1
10
100
IF - Forward Current (mA)
Fig. 11 - Normalized CTR (non-saturated) vs. Forward Current
1.0
IF = 10 mA
1.0
0.8
0.6
0.4
Normalized to CTR value:
IF = 10 mA, VCE = 5 V, Tamb = 25 °C
-60 -40 -20
0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
Rev. 1.3, 17-Sep-14
NCTR - Normalized CTR (sat)
NCTR - Normalized CTR (non-sat)
80 100 120
Tamb = -55 °C
0.1
1.2
0.0
60
Tamb = 0 °C
VCEsat - Collector Emitter Saturation Voltage (V)
0.2
40
Tamb = 25 °C
1.0
0.4
Fig. 8 - Collector Current vs. Collector Emitter Voltage (saturated)
20
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
NCTR - Normalized CTR (non-sat)
Fig. 7 - Leakage Current vs. Ambient Temperature
0
Tamb - Ambient Temperature (°C)
Tamb = 0 °C
0.8
0.6
Tamb = -55 °C
Tamb = 25 °C
0.4
Tamb = 75 °C
0.2
Tamb = 110 °C
Normalized to CTR value:
IF = 10 mA, VCE = 5 V, Tamb = 25 °C
0.0
0.1
1
10
100
IF - Forward Current (mA)
Fig. 12 - Normalized CTR (saturated) vs. Forward Current
Document Number: 83500
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO615C
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Vishay Semiconductors
1000
VCE = 5 V
Phase Angle (deg)
-20
RL = 100 Ω
-40
-60
RL = 1 kΩ
-80
-100
-120
-140
ton, toff - Switching Time (μs)
0
VCE = 5 V, IF = 10 mA
100
toff
10
1
0.1
-160
1
10
100
0
1000
f - Frequency (kHz)
100
10
1
10
IC - Collector Current (mA)
Fig. 14 - Frequency vs. Collector Current
Rev. 1.3, 17-Sep-14
100
VCEsat - Collector Emitter Voltage (V)
VCC = 5 V
1
10
15
20
Fig. 15 - Switching Time vs. Load Resistance
1000
0.1
5
RL - Load Resistance (kΩ)
Fig. 13 - Phase Angle vs. Frequency
F-3dB - Cut-Off Frequency (kHz)
ton
0.20
IF = 10 mA
0.18
0.16
0.14
0.12
0.10
0.08
0.06
-60 -40 -20
0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 16 - Collector Emitter Voltage vs. Ambient Temperature
(saturated)
Document Number: 83500
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO615C
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PACKAGE DIMENSIONS in millimeters
6.5 ± 0.5
Anode
7.62 ± 0.3
4.6 ± 0.5
3.5 ± 0.5
0.5 typ.
0.26
3.3 ± 0.5
2.8 ± 0.5
0.5 ± 0.1
2.54 ± 0.25
7.62 to 9.98
Option 6
Option 9
7.62 typ.
7.62 typ.
3.5 ± 0.3
3.5 ± 0.3
0.1 ± 0.1
0.1 min.
0.6 min.
2.7 min.
8.16 ± 0.8
0.76
10.16 ± 0.3
10.16 typ.
1.78
2.54
R 0.25
1.52
8 min.
11.05
PACKAGE MARKING (Example of VO615C-3X016)
VO615C-3
V YWW 25
Note
• Option information is not marked.
Rev. 1.3, 17-Sep-14
Document Number: 83500
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VO615C
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Vishay Semiconductors
PACKING INFORMATION
DEVICE PER TUBE
TYPE
UNITS/TUBE
TUBES/BOX
UNITS/BOX
DIP-4
100
40
4000
Regular, special,
or bar code label
Tape slot in core
13"
17999-1
Fig. 17 - Tape and Reel Shipping Medium
Ø 1.55 ± 0.05
12 ± 0.1
2 ± 0.1
4 ± 0.1
1.75 ± 0.1
7.5 ± 0.1
16 ± 0.3
0.3 ± 0.05
22713
Fig. 18 - Tape Packing for Option 7 and 9, T1 rotation (2000 units per reel)
Rev. 1.3, 17-Sep-14
Document Number: 83500
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000