SFH655A www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output C FEATURES E • High isolation test voltage 5300 VRMS • Standard plastic DIP-4 package • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC AGENCY APPROVALS • UL - file no. E52744 system code H, double protection i179060 • DIN EN 60747-5-2 (VDE 0884), IEC 60747-5-5 • DIN EN 60747-5-5 (VDE 0884) pending DESCRIPTION • BSI IEC 60950; IEC 60065 The SFH655A is optically coupled isolators with a gallium arsenide infrared LED and a silicon photodarlington detector. Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. This optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. ORDERING INFORMATION S F H 6 # # A - # PART NUMBER # # # PACKAGE OPTION AGENCY CERTIFIED/PACKAGE DIP 7.62 mm Option 9 > 0.1 mm CTR (%) cUL, VDE > 600 DIP-4 SFH655A SMD-4, option 9 SFH655A-X009 Note • For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VRM 6 V IF 60 mA INPUT Peak reverse voltage Forward continuous current Surge forward current tp 10μs IFSM 2.5 A 1.33 mW/°C Pdiss 100 mW Collector emitter breakdown voltage BVCEO 55 V Emitter collector breakdown voltage BVECO 6 V IC 125 mA 2 mW/°C 150 mW Derate linearly from 25 °C Power dissipation OUTPUT Collector (load) current Derate linearly from 25 °C Power dissipation Rev. 1.6, 08-Aug-11 Pdiss 1 Document Number: 83667 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH655A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT 3.33 mW/°C Ptot 250 mW VIORM 890 VP VISO 5300 VRMS Creepage distance 7 mm Clearance distance 7 mm COUPLER Derate linearly from 25 °C Total power dissipation Isolation voltage Isolation test voltage between input and output, climate acc. to IEC 60068 - 1:1988 Comparative tracking index acc. to DIN IEC 112/VDE 0303, part 1:06-84 175 VIO = 500 V, Tamb = 25 °C Isolation resistance RIO 1012 RIO 1011 Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Tamb - 55 to + 100 °C Tsld 260 °C VIO = 500 V, Tamb = 100 °C max. 10 s, dip soldering distance to seating plane 1.5 mm Soldering temperature (1) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). 160 140 Photodarlington IF (mA) Pdiss (mW) 120 100 80 IR-Diode 60 40 20 0 0 22375 20 40 60 80 100 120 Ambient Temperature (°C) Fig. 1 - Power Dissipation vs. Ambient Temperature Rev. 1.6, 08-Aug-11 2 Document Number: 83667 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH655A www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.15 1.5 V Reverse current VR = 6 V IR 0.02 10 μA VR = 0 V, f = 1 MHz CO 50 Collector emitter breakdown voltage ICE = 100 μA BVCEO 55 V Emitter collector breakdown voltage IEC = 10 μA BVECO 6 V Collector emitter dark current VCE = 40 V ICEO 12 Collector emitter capacitance VCE = 0 V, f = 1 MHz CCE 13.5 Capacitance pF OUTPUT 400 nA pF COUPLER Collector emitter saturation voltage IF = 20 mA, IC = 5 mA Coupling capacitance VI-O = 0 V, f = 1 MHz SFH655A VCEsat 1 CC 0.45 V pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. Current transfer ratio IF = 1 mA, VCE = 2 V SFH655A CTR 600 TYP. MAX. UNIT % SAFETY AND INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.669 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see fig. 2) Vpd 1.424 kV Insulation resistance TYP. MAX. UNIT VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 VIO = 500 V, Tamb 150 °C (construction test only) RIO 109 Climatic classification (according to IEC 68 part 1) 55/100/21 Comparative tracking index CTI 175 399 Creepage distance standard DIP-4 7 mm Clearance distance standard DIP-4 7 mm per IEC 60950 2.10.5.1 0.4 mm Insulation thickness, reinforced rated Forward current Isi 275 mA Power dissipation Pso 400 mW Safety temperature Tsi 175 °C Note • According to DIN EN 60747-5-2 (VDE 0884) (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Rev. 1.6, 08-Aug-11 3 Document Number: 83667 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH655A www.vishay.com Vishay Semiconductors VIOTM 450 t1, t2 t3 , t4 ttest tstres 400 Photodarlington Pso (mW) 350 300 = 1 s to 10 s =1s = 10 s = 12 s Vpd 250 VIOWM VIORM 200 IR-Diode Isi (mA) 150 100 50 0 0 0 22376-1 50 100 150 200 13930 Ambient Temperature (°C) t3 ttest t4 tTr = 60 s t1 t2 t stres t Fig. 2 - Derating Diagram Fig. 3 - Test Pulse Diagram for Sample Test according to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5 SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION PART SYMBOL Turn-on time (fig. 10, test circuit 1) PARAMETER MIN. TYP. MAX. UNIT VCC = 10 V, IC = 2 mA, RL = 100 SFH612A ton 16 μs Turn-off time (fig. 10, test circuit 1) VCC = 10 V, IC = 2 mA, RL = 100 SFH612A toff 15 μs Rise time (fig. 10, test circuit 1) VCC = 10 V, IC = 2 mA, RL = 100 SFH612A tr 14 μs Fall time (fig. 10, test circuit 1) VCC = 10 V, IC = 2 mA, RL = 100 SFH612A tf 14 μs Turn-on time (fig. 11, test circuit 2) VCC = 2 V, IC = 10 mA, RL = 100 SFH655A ton 31 μs Turn-off time (fig. 11, test circuit 2) VCC = 2 V, IC = 10 mA, RL = 100 SFH655A toff 55 μs Rise time (fig. 11, test circuit 2) VCC = 2 V, IC = 10 mA, RL = 100 SFH655A tr 27 250 μs Fall time (fig. 11, test circuit 2) VCC = 2 V, IC = 10 mA, RL = 100 SFH655A tf 56 200 μs TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.00 1.5 IF = 20 A, IC = 5.0 mA 0.90 1.3 1.2 - 40 °C VCEsat (V) Forward Voltage (V) 1.4 0 °C 1.1 1.0 0.80 0.70 0.9 0.60 25 °C 75 °C 0.8 0.7 0.01 isfh612a_01 0.1 1 10 0.50 - 40 100 IF - Forward Current (mA) isfh612a_02 Fig. 4 - Forward Voltage vs. Forward Current Rev. 1.6, 08-Aug-11 - 20 0 20 40 60 80 100 TA - Temperature (°C) Fig. 5 - Collector Emitter Saturation Voltage vs. Temperature 4 Document Number: 83667 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH655A www.vishay.com Vishay Semiconductors 120 IF = 10 mA 1.2 100 IF = 1.0 mA, VCE = 2.0 V IC (mA) Normalized CTR 80 1.0 60 IF = 5 mA 40 IF = 1 mA IF = 0.5 mA 0.8 20 0 0.5 0.6 0.6 - 40 - 20 20 0 40 60 80 100 0.8 0.9 1.0 1.1 1.2 VCEsat (V) TA - Temperature (°C) isfh612a_03 Fig. 6 - Normalized CTR vs. Temperature Fig. 9 - Collector Current vs. Collector Emitter Saturation Voltage 10 4 1.8 1.6 100 °C 10 3 IF = 1.0 mA, VCE = 2.0 V ICEO (nA) 1.4 Normalized CTR 0.7 isfh612a_06 1.2 1.0 10 2 75 °C 50 °C 10 25 °C 0 °C 1.0 - 25 °C - 25 °C 0.8 0.6 0.4 0.1 0.2 0 10 20 0.0 0.01 0.1 1 10 100 40 50 60 isfh612a_07 IF - Forward Current (mA) isfh612a_04 Fig. 7 - Normalized CTR vs. Forward Current Fig. 10 - Collector Emitter Dark Current vs. Collector Emitter Voltage over Temperature 10 3 1000 IC = 2.0 mA, VCC = 10 V (SFH612A) IF = 10 mA Time Switching (µs) IF = 5 mA 100 IF = 1.5 mA IF = 2 mA IC (mA) 30 VCE (V) 10 IF = 1 mA IF = 0.5 mA 1 10 2 ton toff trise tfall 0.1 0 isfh612a_05 1 2 3 4 5 6 VCE (V) 7 8 9 10 10 2 10 isfh612a_08 10 4 RL - Load Resistance (W) Fig. 11 - Switching Time vs. Load Resistor Fig. 8 - Collector Current vs. Collector Emitter Voltage Rev. 1.6, 08-Aug-11 10 3 5 Document Number: 83667 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH655A www.vishay.com Time Switching (µs) 10 3 Vishay Semiconductors IC = 2.0 mA, VCC = 10 V (SFH612A) tfall t off 10 2 trise t on 10 10 2 isfh612a_09 10 3 10 4 RL - Load Resistance (W) Fig. 12 - Switching Time vs. Load Resistor VCC IF IF 90 % VO VOUT 10 % tR RE t ON tF t OFF Waveform 1 Circuit 1 isfh612a_10 Fig. 13 - Switching Time Test Circuit and Waveforms VCC Input pulse RL IF VCE 10 % Output pulse 90 % tR t ON Circuit 2 tF tOFF Waveform 2 isfh612a_11 Fig. 14 - Switching Time Test Circuit and Waveforms Rev. 1.6, 08-Aug-11 6 Document Number: 83667 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SFH655A www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2 1 Pin one ID 6.48 6.81 ISO method A 3 4 4.55 4.83 7.62 typ. 0.79 typ. 0.76 1.14 1.27 typ. 3.30 3.81 i178027 5.84 6.35 10° 4° typ. 2.79 3.30 0.508 0.89 0.46 0.56 0° to 15° 0.2 0.3 1.27 2.54 Option 9 9.53 10.03 7.62 ref. 0.102 0.249 0.30 typ. 0.51 1.02 15° max. 8 min. 18449 PACKAGE MARKING SFH655A V YWW 24 Note • VDE logo is only printed on option 1 parts. Option information is not marked on the part. Rev. 1.6, 08-Aug-11 7 Document Number: 83667 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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