T1110P6 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip A • Package form: single chip • Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 21591 DESCRIPTION APPLICATIONS T1110P6 is a high speed and high sensitive PIN photodiode chip with 7.5 mm2 sensitive area detecting visible and near infrared radiation. Anode is the bond pad on top. • High speed photo detector GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY Ira (μA) ϕ (deg) λ0.1 (nm) 55 ± 60 430 to 1100 PACKAGING REMARKS PACKAGE FORM Wafer sawn on foil with disco frame MOQ: 8000 pcs Chip COMPONENT T1110P6 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE T1110P6-SD-F Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage VR 60 V Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg1 -40 to +100 °C Storage temperature range on foil Tstg2 -40 to +50 °C Rev. 1.5, 21-May-14 TEST CONDITION UNIT Document Number: 81122 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T1110P6 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Breakdown voltage Forward voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of VOC Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time TEST CONDITION IR = 100 μA, E = 0 IF = 50 mA VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm SYMBOL V(BR) VF Iro CD CD VOC TKVOC Ik TKIk Ira ϕ λp λ0.1 NEP tr tf MIN. TYP. 60 1 2 70 25 350 - 2.6 50 0.1 55 ± 60 940 430 to 1100 4 x 10-14 100 100 MAX. UNIT V V nA pF pF mV mV/K μA %/K μA deg nm nm W/√Hz ns ns 1.3 5 Note • The measurements are based on samples of die which are mounted on a TO-header without resin coating BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Ira - Reverse Light Current (µA) Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 100 10 0.1 0.01 1 20 40 60 80 100 1 10 (mW/cm2) Fig. 3 - Reverse Light Current vs. Irradiance 100 1.4 Ira - Reverse Light Current (µA) I ra rel - Relative Reverse Light Current Fig. 1 - Reverse Dark Current vs. Ambient Temperature 0.1 Ee - Irradiance 12787 Tamb - Ambient Temperature (°C) 94 8403 VR = 5 V λ = 950 nm 1 VR = 5 V λ = 950 nm 1.2 1.0 0.8 1 mW/cm 2 0.5 mW/cm 2 0.2 mW/cm 2 10 0.1 mW/cm 2 0.05 mW/cm 2 λ = 950 nm 1 0.6 0 94 8409 20 40 60 80 Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.5, 21-May-14 0.1 100 Tamb - Ambient Temperature (°C) 12788 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Document Number: 81122 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 T1110P6 www.vishay.com Vishay Semiconductors S(λ)rel - Relative Spectral Sensitivity CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0.8 0.6 0.4 0.2 0 0 0.1 948407 1.0 1 10 350 100 VR - Reverse Voltage (V) 550 Fig. 5 - Diode Capacitance vs. Reverse Voltage 750 950 1150 λ - Wavelength (nm) 94 8420 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 2.97 mm Length of chip edge (y-direction) Ly 2.97 mm Sensitive area AS 2.74 x 2.74 mm2 Die height Bond pad anode H 0.28 mm axb 0.2 x 0.2 mm2 ADDITIONAL INFORMATION Frontside metallization, anode Aluminum Backside metallization, cathode NiV-Ag Dicing Sawing Die bonding technology Epoxy bonding Note • All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Rev. 1.5, 21-May-14 Document Number: 81122 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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