Single N-channel MOSFET ELM32D606A-S ■General description ■Features ELM32D606A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=24A Rds(on) < 18mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±20 24 15 V 60 12.7 8.1 A A mJ Continuous drain current Pulsed drain current Avalanche current Avalanche energy Ta=25°C Ta=100°C L=0.1mH Tc=25°C Tc=100°C Junction and storage temperature range Id Idm Ias Eas Power dissipation A 19.5 7.8 -55 to 150 Pd Tj, Tstg 3 W °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. 6.4 Unit °C/W 62.5 °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 2 3 GATE DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32D606A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=20V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Vgs=10V, Id=7A Rds(on) Vgs=4.5V, Id=6A Vds=5V, Id=7A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is If=7A, Vgs=0V Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Rg Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V 1 Gfs Gate-drain charge Turn-on delay time 30 Vds=24V, Vgs=0V Forward transconductance Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.30 μA ±100 nA 1.75 13.5 2.30 18.0 V 20.0 27.0 33 1.1 17 mΩ 1 S 1 V A 1 Vgs=0V, Vds=15V, f=1MHz 328 64 42 pF pF pF Vgs=0V, Vds=0V, f=1MHz 3 Ω Vgs=10V, Vds=15V, Id=7A 7.6 1.1 nC nC 2 2 Qgd 2.5 nC 2 td(on) 19 ns 2 tr Vgs=10V, Vds=15V, Id=7A td(off) Rgen=6Ω 18 39 ns ns 2 2 20 ns 2 8.4 2.2 ns nC Qg Qgs tf trr Qrr If=7A, dIf/dt=100A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4-2 Single N-channel MOSFET PD606BA ELM32D606A-S N-Channel Enhancement Mode Effect Transistor ■Typical electrical and thermalField characteristics NIKO-SEM TO-252 Halogen-Free & Lead-Free Output Characteristics 20 Transfer Characteristics 20 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VGS=3.5V 16 VGS=10V VGS=9V VGS=8V VGS=7V VGS=6V VGS=5V VGS=4.5V 12 8 VGS=3V 4 0 0 2 4 6 8 On-Resistance VS Gate-To-Source 0.08 0.06 0.04 0.02 ID=7A 2 6 8 VGS, Gate-To-Source Voltage(V) 25℃ -20℃ 125℃ 4 0 1 2 3 4 5 6 VGS, Gate-To-Source Voltage(V) On-Resistance VS Drain Current 0.04 0.03 VGS=4.5V 0.02 VGS=10V 0.01 0 10 On-Resistance VS Temperature 2.0 0 3 6 9 12 15 ID , Drain-To-Source Current(A) Capacitance Characteristic 100 1.8 1.6 C , Capacitance(pF) Normalized Drain to Source ON-Resistance 4 8 0.05 RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) 0.1 0 12 0 10 VDS, Drain-To-Source Voltage(V) 16 1.4 1.2 1.0 0.8 150℃ 1 25℃ VGS=10V ID=7A 0.6 0.4 10 -50 -25 0 25 50 75 100 125 0.1 150 TJ , Junction Temperature(˚C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VDS, Drain-To-Source Voltage(V) 1.4 E-23-4 REV 1.1 3 4-3 Single N-channel MOSFET NIKO-SEM TO-252 Halogen-Free & Lead-Free Gate charge Characteristics 400 350 VDS=15V ID=7A 8 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) Source-Drain Diode Forward Voltage Characteristics 10 PD606BA N-Channel Enhancement Mode ELM32D606A-S Field Effect Transistor 6 4 2 CISS 300 250 200 150 100 COSS 50 0 0 2 4 6 8 0 10 Qg , Total Gate Charge(nC) Safe Operating Area CRSS 0 5 10 15 20 50 Operation in This Area is Limited by RDS(ON) ↓ 10 1ms 10ms 1 DC 1 10 Transient Thermal Resistance 20 10 0 0.001 100 VDS, Drain-To-Source Voltage(V) 0.01 0.1 1 Single Pulse Time(s) 10 100 Transient Thermal Response Curve 10 r(t) , Normalized Effective 30 100ms NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 6.4˚C/W 4.Single Pulse 0.1 Single Pulse RθJC = 6.4 ˚C/W TC=25˚C 40 Power(W) ID , Drain Current(A) 30 Single Pulse Maximum Power Dissipation 100 0.1 25 VSD, Source-To-Drain Voltage(V) Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 1 Notes single pulse 0.1 1.Duty cycle, D= t1 / t2 2.RthJC = 6.4℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 0.01 0.0001 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration[sec] E-23-4 REV 1.1 4 4-4