elm32d606a

Single N-channel MOSFET
ELM32D606A-S
■General description
■Features
ELM32D606A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=24A
Rds(on) < 18mΩ (Vgs=10V)
Rds(on) < 27mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±20
24
15
V
60
12.7
8.1
A
A
mJ
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Ta=25°C
Ta=100°C
L=0.1mH
Tc=25°C
Tc=100°C
Junction and storage temperature range
Id
Idm
Ias
Eas
Power dissipation
A
19.5
7.8
-55 to 150
Pd
Tj, Tstg
3
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Symbol
Rθjc
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
6.4
Unit
°C/W
62.5
°C/W
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
Pin name
1
2
3
GATE
DRAIN
SOURCE
3
4-1
G
S
Single N-channel MOSFET
ELM32D606A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=20V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
Vgs=10V, Id=7A
Rds(on)
Vgs=4.5V, Id=6A
Vds=5V, Id=7A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
If=7A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Rg
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
1
Gfs
Gate-drain charge
Turn-on delay time
30
Vds=24V, Vgs=0V
Forward transconductance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.30
μA
±100
nA
1.75
13.5
2.30
18.0
V
20.0
27.0
33
1.1
17
mΩ
1
S
1
V
A
1
Vgs=0V, Vds=15V, f=1MHz
328
64
42
pF
pF
pF
Vgs=0V, Vds=0V, f=1MHz
3
Ω
Vgs=10V, Vds=15V, Id=7A
7.6
1.1
nC
nC
2
2
Qgd
2.5
nC
2
td(on)
19
ns
2
tr
Vgs=10V, Vds=15V, Id=7A
td(off) Rgen=6Ω
18
39
ns
ns
2
2
20
ns
2
8.4
2.2
ns
nC
Qg
Qgs
tf
trr
Qrr
If=7A, dIf/dt=100A/μs
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4-2
Single N-channel MOSFET
PD606BA
ELM32D606A-S
N-Channel
Enhancement Mode
Effect Transistor
■Typical electrical and thermalField
characteristics
NIKO-SEM
TO-252
Halogen-Free & Lead-Free
Output Characteristics
20
Transfer Characteristics
20
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
VGS=3.5V
16
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
12
8
VGS=3V
4
0
0
2
4
6
8
On-Resistance VS Gate-To-Source
0.08
0.06
0.04
0.02
ID=7A
2
6
8
VGS, Gate-To-Source Voltage(V)
25℃
-20℃
125℃
4
0
1
2
3
4
5
6
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Drain Current
0.04
0.03
VGS=4.5V
0.02
VGS=10V
0.01
0
10
On-Resistance VS Temperature
2.0
0
3
6
9
12
15
ID , Drain-To-Source Current(A)
Capacitance Characteristic
100
1.8
1.6
C , Capacitance(pF)
Normalized Drain to Source
ON-Resistance
4
8
0.05
RDS(ON)ON-Resistance(OHM)
RDS(ON)ON-Resistance(OHM)
0.1
0
12
0
10
VDS, Drain-To-Source Voltage(V)
16
1.4
1.2
1.0
0.8
150℃
1
25℃
VGS=10V
ID=7A
0.6
0.4
10
-50
-25
0
25
50
75
100
125
0.1
150
TJ , Junction Temperature(˚C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VDS, Drain-To-Source Voltage(V)
1.4
E-23-4
REV 1.1
3
4-3
Single N-channel MOSFET
NIKO-SEM
TO-252
Halogen-Free & Lead-Free
Gate charge Characteristics
400
350
VDS=15V
ID=7A
8
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
Characteristics
10
PD606BA
N-Channel
Enhancement Mode
ELM32D606A-S
Field Effect Transistor
6
4
2
CISS
300
250
200
150
100
COSS
50
0
0
2
4
6
8
0
10
Qg , Total Gate Charge(nC)
Safe Operating Area
CRSS
0
5
10
15
20
50
Operation in This Area
is Limited by RDS(ON)
↓
10
1ms
10ms
1
DC
1
10
Transient Thermal Resistance
20
10
0
0.001
100
VDS, Drain-To-Source Voltage(V)
0.01
0.1
1
Single Pulse Time(s)
10
100
Transient Thermal Response Curve
10
r(t) , Normalized Effective
30
100ms
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 6.4˚C/W
4.Single Pulse
0.1
Single Pulse
RθJC = 6.4 ˚C/W
TC=25˚C
40
Power(W)
ID , Drain Current(A)
30
Single Pulse Maximum Power Dissipation
100
0.1
25
VSD, Source-To-Drain Voltage(V)
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
Notes
single pulse
0.1
1.Duty cycle, D= t1 / t2
2.RthJC = 6.4℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
E-23-4
REV 1.1
4
4-4