Single P-channel MOSFET

Single P-channel MOSFET
ELM13401CA-S
■General description
■Features
ELM13401CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-30V
Id=-4.2A (Vgs=-10V)
Rds(on) < 50mΩ (Vgs=-10V)
Rds(on) < 65mΩ (Vgs=-4.5V)
Rds(on) < 120mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Continuous drain current
-4.2
Id
Ta=70°C
Pulsed drain current
-3.5
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
-30
1.4
1.0
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
65
85
43
90
125
60
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
SOT-23(TOP VIEW)
3
Note
D
Pin No.
Pin name
1
2
GATE
SOURCE
3
DRAIN
G
S
4- 1
Single P-channel MOSFET
ELM13401CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Rds(on)
Vgs=-10V
Id=-4.2A
-0.7
-25
Vds=-5V, Id=-5A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=-1A, Vgs=0V
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Rg
-1
-5
μA
±100
nA
-1.0
-1.3
V
A
42
50
53
80
75
65
120
Ta=125°C
Vgs=-4.5V, Id=-4A
Vgs=-2.5V, Id=-1A
Gfs
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Forward transconductance
7
11
-0.75
mΩ
mΩ
mΩ
S
-1.00
-2.2
V
A
954
pF
115
77
6
pF
pF
Ω
9.4
2.0
nC
nC
3.0
6.3
nC
ns
Vgs=-10V, Vds=-15V
3.2
ns
td(off) RL=3.6Ω, Rgen=6Ω
tf
trr
If=-4A, dIf/dt=100A/μs
38.2
12.0
20.2
ns
ns
ns
11.2
nC
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-30
Qrr
Vgs=0V, Vds=-15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-15V
Id=-4A
If=-4A, dIf/dt=100A/μs
NOTE :
1.The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2.Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4- 2
Single P-channel MOSFET
ELM13401CA-S
■Typical electrical and thermal characteristics
10
25.00
-10V
Vds=-5V
-4.5V
20.00
8
15.00
-Id (A)
-Id (A)
-3V
-2.5V
10.00
Vgs=-2V
5.00
0.00
0.00
6
125°C
4
25°C
2
0
1.00
2.00
3.00
4.00
5.00
0
0.5
120
2
2.5
3
Normalized On-Resistance
1.8
100
Rds(on) (m� )
1.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
80
Vgs=-2.5V
Vgs=-4.5V
60
40
Vgs=-10V
20
0.00
Id=-3.5A, Vgs=-4.5V
1.6
Id=-3.5A, Vgs=-10V
1.4
Vgs=-2.5V
1.2
Id=-1A
1
0.8
2.00
4.00
6.00
8.00
10.00
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
190
170
1.0E+00
150
Id=-2A
1.0E-01
130
-Is (A)
Rds(on) (m� )
1
110
90
125°C
70
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
50
25°C
1.0E-05
30
1.0E-06
10
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4- 3
1.2
Single P-channel MOSFET
ELM13401CA-S
5
1200
Capacitance (pF)
4
-Vgs (Volts)
1400
Vds=-15V
Id=-4A
3
2
1
1000
Ciss
800
600
400
0
0
2
4
6
8
10
0
12
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Tj(max)=150°C
Ta=25°C
10ms
1.0
20
25
30
Tj(max)=150°C
Ta=25°C
30
100�s
0.1s
20
10
1s
10s
DC
0.1
1
-Vds (Volts)
10
0
0.001
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
15
10�s
1ms
10
10
40
Rds(on)
10.0 limited
0.1
5
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100.0
Crss
Coss
200
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4- 4
100
1000