Single P-channel MOSFET ELM13401CA-S ■General description ■Features ELM13401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-30V Id=-4.2A (Vgs=-10V) Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 65mΩ (Vgs=-4.5V) Rds(on) < 120mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±12 V Symbol Vds Vgs Ta=25°C Continuous drain current -4.2 Id Ta=70°C Pulsed drain current -3.5 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg -30 1.4 1.0 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 65 85 43 90 125 60 °C/W °C/W °C/W 1 2 1 3 ■Circuit SOT-23(TOP VIEW) 3 Note D Pin No. Pin name 1 2 GATE SOURCE 3 DRAIN G S 4- 1 Single P-channel MOSFET ELM13401CA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance Rds(on) Vgs=-10V Id=-4.2A -0.7 -25 Vds=-5V, Id=-5A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=-1A, Vgs=0V Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Coss Crss Rg -1 -5 μA ±100 nA -1.0 -1.3 V A 42 50 53 80 75 65 120 Ta=125°C Vgs=-4.5V, Id=-4A Vgs=-2.5V, Id=-1A Gfs V Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Forward transconductance 7 11 -0.75 mΩ mΩ mΩ S -1.00 -2.2 V A 954 pF 115 77 6 pF pF Ω 9.4 2.0 nC nC 3.0 6.3 nC ns Vgs=-10V, Vds=-15V 3.2 ns td(off) RL=3.6Ω, Rgen=6Ω tf trr If=-4A, dIf/dt=100A/μs 38.2 12.0 20.2 ns ns ns 11.2 nC Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -30 Qrr Vgs=0V, Vds=-15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-15V Id=-4A If=-4A, dIf/dt=100A/μs NOTE : 1.The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2.Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4- 2 Single P-channel MOSFET ELM13401CA-S ■Typical electrical and thermal characteristics 10 25.00 -10V Vds=-5V -4.5V 20.00 8 15.00 -Id (A) -Id (A) -3V -2.5V 10.00 Vgs=-2V 5.00 0.00 0.00 6 125°C 4 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 120 2 2.5 3 Normalized On-Resistance 1.8 100 Rds(on) (m� ) 1.5 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics 80 Vgs=-2.5V Vgs=-4.5V 60 40 Vgs=-10V 20 0.00 Id=-3.5A, Vgs=-4.5V 1.6 Id=-3.5A, Vgs=-10V 1.4 Vgs=-2.5V 1.2 Id=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 Id=-2A 1.0E-01 130 -Is (A) Rds(on) (m� ) 1 110 90 125°C 70 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4- 3 1.2 Single P-channel MOSFET ELM13401CA-S 5 1200 Capacitance (pF) 4 -Vgs (Volts) 1400 Vds=-15V Id=-4A 3 2 1 1000 Ciss 800 600 400 0 0 2 4 6 8 10 0 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Tj(max)=150°C Ta=25°C 10ms 1.0 20 25 30 Tj(max)=150°C Ta=25°C 30 100�s 0.1s 20 10 1s 10s DC 0.1 1 -Vds (Volts) 10 0 0.001 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 15 10�s 1ms 10 10 40 Rds(on) 10.0 limited 0.1 5 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100.0 Crss Coss 200 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4- 4 100 1000