2907

NTE2907
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
Features:
D Low Drain−Source ON Resistance
D High Forward Transfer Admittance
D Low Leakage Current
Applications:
D High Current, High Speed Switching Applications
D Chopper Regulator
D DC−DC Converter
D Motor Drive
D
G
S
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Drain−Gate Voltage (RGS = 20k+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
Continuous Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Drain Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Single Pulse Avalanche Energy (Note 1), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.785C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W
Note 1. VDD = 90V, Starting Tch = +255C, L = 6.36mH, RG = 25+ , IAR = 10A.
Note 2. Repetitive Rating: Pulse Width limited by Max. Junction Temperature.
Rev. 12−13
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Gate Leakage Current
Gate−Source Breakdown Voltage
Drain Cut−Off Current
Drain−Source Breakdown Voltage
Symbol
IGSS
Test Conditions
VDS = 0V, VGS = +25V
V(BR)GSS VDS = 0V, IG = +103A
IDSS
VDS = 600, VGS = 0V
V(BR)DSS VGS = 0V, ID = 10mA
Min
Typ
Max
Unit
−
−
+10
3A
+30
−
−
V
−
−
100
3A
600
−
−
V
2.0
−
4.0
V
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 1mA
Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 5A
−
0.54
0.75
+
Forward Transfer Admittance
|Yfs|
VDS = 10V, ID = 5A
3.0
9.0
−
S
Input Capacitance
Ciss
VDS = 10V, VGS = 0V, f = 1MHz
−
2040
−
pF
Output Capacitance
Coss
−
590
−
pF
Reverse Transfer Capacitance
Crss
−
230
−
pF
Turn−On Time
td(on)
−
58
−
ns
−
22
−
ns
−
190
−
ns
−
36
−
ns
−
45
−
nC
Rise Time
tr
Turn−Off Time
td(off)
Fall Time
VDD = 200V, VGS = 10V, ID = 5A,
RL = 40+ , VIN: tr, tf < 5ns, Duty 3 1%,
tw = 103s
tf
Total Gate Charge
Qg
VDD = 400V, VGS = 10V, ID = 10A
Gate−Source Charge
Qgs
−
25
−
nC
Gate−Drain (“Miller”) Charge
Qgd
−
20
−
nC
Continuous Drain Reverse Current
IDR
−
−
10
A
Pulse Drain Reverse Current
IDRP
−
−
40
A
Diode Forward Voltage
VDSF
IDR = 10A, VGS = 0V
−
−
1.7
V
Reverse Recovery Time
trr
IDR = 10A, VGS = 0V, dIDR/dt = 100A/3s
−
1300
−
ns
Reverse Recovery Charge
Qrr
16
.177 (4.5) .126 (3.2) Dia Max
.106 (2.7)
.405 (10.3)
Max
.272
(6.9)
.622
(15.0)
G
D
S
.220
(5.6)
Max
.512
(13.0)
Min
.102 (2.6)
.100 (2.54)
3C