NTE2907 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Low Drain−Source ON Resistance D High Forward Transfer Admittance D Low Leakage Current Applications: D High Current, High Speed Switching Applications D Chopper Regulator D DC−DC Converter D Motor Drive D G S Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain−Gate Voltage (RGS = 20k+ ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Continuous Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Drain Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Single Pulse Avalanche Energy (Note 1), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 363mJ Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mJ Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.785C/W Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W Note 1. VDD = 90V, Starting Tch = +255C, L = 6.36mH, RG = 25+ , IAR = 10A. Note 2. Repetitive Rating: Pulse Width limited by Max. Junction Temperature. Rev. 12−13 Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Gate Leakage Current Gate−Source Breakdown Voltage Drain Cut−Off Current Drain−Source Breakdown Voltage Symbol IGSS Test Conditions VDS = 0V, VGS = +25V V(BR)GSS VDS = 0V, IG = +103A IDSS VDS = 600, VGS = 0V V(BR)DSS VGS = 0V, ID = 10mA Min Typ Max Unit − − +10 3A +30 − − V − − 100 3A 600 − − V 2.0 − 4.0 V Gate Threshold Voltage VGS(th) VDS = 10V, ID = 1mA Drain−Source ON Resistance RDS(on) VGS = 10V, ID = 5A − 0.54 0.75 + Forward Transfer Admittance |Yfs| VDS = 10V, ID = 5A 3.0 9.0 − S Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz − 2040 − pF Output Capacitance Coss − 590 − pF Reverse Transfer Capacitance Crss − 230 − pF Turn−On Time td(on) − 58 − ns − 22 − ns − 190 − ns − 36 − ns − 45 − nC Rise Time tr Turn−Off Time td(off) Fall Time VDD = 200V, VGS = 10V, ID = 5A, RL = 40+ , VIN: tr, tf < 5ns, Duty 3 1%, tw = 103s tf Total Gate Charge Qg VDD = 400V, VGS = 10V, ID = 10A Gate−Source Charge Qgs − 25 − nC Gate−Drain (“Miller”) Charge Qgd − 20 − nC Continuous Drain Reverse Current IDR − − 10 A Pulse Drain Reverse Current IDRP − − 40 A Diode Forward Voltage VDSF IDR = 10A, VGS = 0V − − 1.7 V Reverse Recovery Time trr IDR = 10A, VGS = 0V, dIDR/dt = 100A/3s − 1300 − ns Reverse Recovery Charge Qrr 16 .177 (4.5) .126 (3.2) Dia Max .106 (2.7) .405 (10.3) Max .272 (6.9) .622 (15.0) G D S .220 (5.6) Max .512 (13.0) Min .102 (2.6) .100 (2.54) 3C