ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23 3 D G S 1 2 1.Gate 2.Source -30V/-4.0A, RDS(ON) = 54mΩ (Typ.) @VGS = -10V -30V/-3.2A, RDS(ON) = 72mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain PART MARKING SOT-23 3 A7YA 1 Y: Year Code 2 A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3407SRG 2006. V1 ST3407SRG P Channel Enhancement Mode MOSFET -3.6A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V ID -3.6 -3.0 A IDM -15 A Continuous Source Current (Diode Conduction) IS -1.0 A TA=25℃ TA=70℃ PD 1.20 0.8 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3407SRG 2006. V1 ST3407SRG P Channel Enhancement Mode MOSFET -3.6A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -30 VGS(th) VDS=VGS,ID=-250uA -1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V -3.0 V VDS=0V,VGS=±20V ±100 Na VDS=-24V,VGS=0V -1 VDS=-24V,VGS=0V TJ=55℃ -9.5 UA Drain-source On-Resistance RDS(on) VGS=-10.0V,ID=-4.0A VGS=-4.5V,ID=-3.2A 54 72 mΩ Forward Transconductance gfs VDS=-5.0V,ID=-4.0A 10 S Diode Forward Voltage VSD IS=-1.0A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time 14 21 VDS=-15V VGS=-10V ID≡-4.0A 1.9 Ciss Coss Crss VDS=-15V VGS=0V F=1MHz 540 131 105 td(on) VDD=-15V RL=15Ω ID=-1.0A VGEN=-10V RG=6Ω 10 16 16 25 32 50 21 32 tr td(off) tf nC 3.7 pF nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3407SRG 2006. V1 ST3407SRG P Channel Enhancement Mode MOSFET -3.6A TYPICAL CHARACTERICTICS (25℃ unless otherwise noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3407SRG 2006. V1 ST3407SRG P Channel Enhancement Mode MOSFET -3.6A TYPICAL CHARACTERICTICS (25℃ unless otherwise noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3407SRG 2006. V1 ST3407SRG P Channel Enhancement Mode MOSFET -3.6A SOT-23 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3407SRG 2006. V1