Single N-channel MOSFET ELM17408GA-S ■General description ■Features ELM17408GA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V. • • • • • Vds=20V Id=2.2A (Vgs=4.5V) Rds(on) < 82mΩ (Vgs=4.5V) Rds(on) < 95mΩ (Vgs=2.5V) Rds(on) < 120mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 20 V Gate-source voltage Vgs ±8 V Ta=25°C Continuous drain current 2.20 Id Ta=70°C Pulsed drain current 1.75 10 0.625 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg 0.400 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Symbol Typ. Max. Unit Note Maximum junction-to-ambient Maximum junction-to-ambient t≤10s Steady-state Rθja 160 180 200 220 °C/W °C/W 1 Maximum junction-to-lead Steady-state Rθjl 130 160 °C/W 3 ■Pin configuration ■Circuit D SC-70-6(TOP VIEW) 6 1 5 2 4 3 Pin No. Pin name 1 2 3 DRAIN DRAIN GATE 4 5 6 SOURCE DRAIN DRAIN 4-1 G S Single N-channel MOSFET ELM17408GA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V 100 nA 0.6 0.8 V A 67 82 99 125 Vgs=2.5V, Id=2A Vgs=1.8V, Id=1A 78 96 95 120 mΩ mΩ Vds=5V, Id=1.6A Is=1A, Vgs=0V 6.7 0.69 1.00 S V 0.91 A Vds=16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±8V Vgs=4.5V, Id=2.2A Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Gfs Vsd Ciss mΩ 499 pF 65 56 3 pF pF Ω 6.02 nC 0.41 1.35 nC nC td(on) 6.5 ns tr Vgs=5V, Vds=10V td(off) RL=4.5Ω, Rgen=6Ω 8.0 61.0 ns ns 16.0 23.2 8.6 ns ns nC Coss Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge Ta=125°C 0.4 10 Is Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Rds(on) V μA Idss Static drain-source on-resistance 20 1 5 Zero gate voltage drain current Gate threshold voltage On state drain current Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=0V, Vds=10V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg tf trr Qrr Vgs=4.5V, Vds=10V, Id=2.2A If=2.2A, dlf/dt=100A/μs If=2.2A, dlf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM17408GA-S ■Typical electrical and thermal characteristics 16 10 8V Vds=5V 4.5V 8 25°C 3V 2.5V 8 6 4 4 Vgs=1.5V 2 0 0 0 1 2 3 4 5 0 0.5 140 1.5 1.8 Normalized On-Resistance Rds(on) (m� ) 1 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics 120 Vgs=1.8V 100 Vgs=2.5V 80 Vgs=4.5V 60 Vgs=2.5V Id=2.0A Vgs=1.8V 1.6 Id=1.0A 1.4 Vgs=4.5V Id=2.2A 1.2 1 0.8 0 2 4 6 8 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 180 1E+00 160 125°C Id=2.2A 1E-01 140 120 Is (A) Rds(on) (m� ) 125°C 2V Id(A) Id (A) 12 125°C 1E-02 25°C 1E-03 100 25°C 80 1E-04 1E-05 60 1 2 3 4 5 6 7 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.4 Single N-channel MOSFET ELM17408GA-S 1000 5 Vds=10V Id=2.2A 800 Capacitance (pF) Vgs (Volts) 4 3 2 Ciss 600 400 Coss 200 1 0 0 0 1 2 3 4 5 6 0 7 10.0 Tj(max)=150°C Ta=25°C 15 20 Tj(max)=150°C Ta=25°C 12 Rds(on) limited 10�s 10ms 1ms 0.1s 1.0 8 4 1s 0.1 0.1 10s DC 1 10 0 0.001 100 10 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=360°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 10 16 100�s Power (W) 100.0 5 Vds (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics Id (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 P Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000