UNISONIC TECHNOLOGIES CO., LTD UT2035Z Power MOSFET -3.6A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET 3 DESCRIPTION The UTC UT2035Z is a P-channel enhancement mode MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge, etc. 2 1 SOT-23 (EIAJ SC-59) FEATURES *RDS(ON)<42mΩ @VGS=-4.5V, ID=-4.0A RDS(ON)<65mΩ @VGS=-2.5V, ID=-4.0A RDS(ON)<82mΩ @VGS=-1.8V, ID=-2.0A * High switching speed * Low gate charge * Low gate threshold voltage * Low input capacitance * Low input/output leakage SYMBOL OR DERING INFORMATION Ordering Number Note: UT2035ZG-AE3-R Pin Assignment: S: Source G: Gate UT2035ZG-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel D: Drain (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 (3)Green Package (3) G: Halogen Free and Lead Free MARKING 3 235ZG 2 1 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-937.D UT2035Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -20 V ±8 V Steady, TA=25°C -3.6 A Continuous (Note 2) ID Drain Current State, TA=70°C -2.9 A -24 A Pulsed (Note 3) IDM Power Dissipation (Note 2) PD 0.81 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t≤10s. 3. Repetitive rating, pulse width limited by junction temperature. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL θJA Junction to Ambient RATINGS 153.5 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Forward Leakage Current Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=-250µA, VGS=0V VDS=-20V, VGS=0V VGS=+8V, VDS=0V VGS=-8V, VDS=0V -20 -1.0 +10 -10 V µA µA µA VDS=VGS, ID=-250µA VGS=-4.5V, ID=-4.0A VGS=-2.5V, ID=-4.0A VGS=-1.8V, ID=-2.0A VDS=-5V, ID=-4A VGS=0V, IS=-1A -0.4 -0.7 -1.0 30 42 50 65 61 82 14 -0.7 -1.0 V mΩ mΩ mΩ S V 1610 157 145 pF pF pF 15.4 2.5 3.3 9.45 16.8 12.4 94.1 42.4 nC nC nC Ω ns ns ns ns Forward Transfer Admittance |YFS| Diode Forward Voltage VSD DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-10V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=-4.5V, VDS=-10V, ID=-4A Gate to Source Charge QGS Gate to Drain Charge QGD Gate Resistance RG VDS=0V, VGS=0V, f=1MHz Turn-ON Delay Time tD(ON) VDS=-10V, VGS=-4.5V,ID=-1A, Rise Time tR RG=6.0Ω, RL=10Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF Note: Short duration pulse test used to minimize self-heating effect. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 2 of 4 QW-R502-937.D UT2035Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, -ID (µA) 300 Drain Current vs. Gate Threshold Voltage 300 Drain Current, -ID (µA) 250 200 150 100 50 200 150 100 50 0 0 0 0 5 15 20 25 10 Drain-Source Breakdown Voltage, -BVDSS (V) Drain-Source On-State Resistance Characteristics 7.0 1.4 6.0 1.2 5.0 VGS=-4.5V, ID=-4A 4.0 3.0 VGS=-2.5V, ID=-4A 2.0 VGS=-1.8V, ID=-2A 1.0 1.0 0.8 0.6 0.4 0.2 0 0 0 0 50 100 150 200 250 Drain to Source Voltage, -VDS (mV) Li m it 300μs R D S( O N ) 10 1ms 1 10ms 100ms 0.1 TA=25 0.01 0.01 1 0.1 10 Drain-Source Voltage,VDS (V) 1s DC 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Normalized Transient Thermal Resistance Safe Operation Area 50 Drain Current,ID (A) 0.2 0.4 0.6 0.8 1.0 1.2 Gate Threshold Voltage, -VTH (V) Drain Current vs. Source to Drain Voltage Drain Current, -ID (A) Drain Current, -ID (A) 250 2 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, -VSD (V) Thermal Transient Impedance 1 Duty=0.5 0.1 0.01 0.2 0.1 0.05 0.02 0.01 Single Pulse Mounted on 1in 2 pad RθJA: 150 /W 1E-3 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) 3 of 4 QW-R502-937.D UT2035Z Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Drain Current, -ID (A) Drain Current, -ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-937.D