AO6415 20V P-Channel MOSFET General Description Product Summary The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. VDS -20V ID (at VGS=-10V) -3.3A RDS(ON) (at VGS= -10V) < 82mΩ RDS(ON) (at VGS= -4.5V) < 100mΩ RDS(ON) (at VGS= -2.5V) < 140mΩ Typical ESD protection HBM Class 2 TSOP6 Top View D Bottom View Top View D 1 6 D 2 5 D G 3 4 S D G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Jul 2011 Steady-State Steady-State A 1.25 W 0.8 TJ, TSTG Symbol t ≤ 10s V -17 PD TA=70°C ±12 -2.7 IDM TA=25°C Power Dissipation B Units V -3.3 ID TA=70°C Maximum -20 RθJA RθJL www.aosmd.com -55 to 150 Typ 82 111 56 °C Max 100 140 70 Units °C/W °C/W °C/W Page 1 of 5 AO6415 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 ±10 µA V 68 82 95 115 VGS=-4.5V, ID=-2A 80 100 mΩ VGS=-2.5V, ID=-1A 107 140 mΩ 8.6 VDS=VGS, ID=-250µΑ -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -17 VGS=-10V, ID=-3.3A TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-3.3A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr µA -1.2 VDS=0V, VGS= ±12V Gate Threshold Voltage Crss Units -0.85 Gate-Body leakage current VGS(th) Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IGSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-2A A -0.76 mΩ S -1 V -1.5 A 250 325 400 pF 40 63 85 pF 22 37 52 pF 11.2 17 Ω 3.2 4.5 nC 0.6 nC 0.9 nC 11 ns VGS=-4.5V, VDS=-10V, RL=5Ω, RGEN=3Ω 5.5 ns 22 ns 8 ns IF=-2A, dI/dt=100A/µs 6.1 Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs 1.4 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Jul 2011 www.aosmd.com Page 2 of 5 AO6415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 30 -10V 25 9 -3.5V -ID(A) 20 -ID (A) VDS=-5V -4.5V 15 6 -2.5V 10 3 VGS=-2.0V 125°C 5 25°C 0 0 0 1 2 3 4 0 5 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 170 Normalized On-Resistance 1.80 VGS=-2.5V 140 RDS(ON) (mΩ Ω) 1 110 VGS=-4.5V 80 VGS=-10V 50 ID=-3.3A, VGS=-10V 1.60 ID=-2A, VGS=-4.5V 1.40 ID=-1A, VGS=-2.5V 1.20 1.00 0.80 20 0 0 2 6 8 -I4D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 180 ID=-3.3A 1.0E+00 150 125°C -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 120 125°C 25°C 1.0E-02 90 1.0E-03 25°C 60 1.0E-04 1.0E-05 30 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Jul 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO6415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-10V ID=-2A 450 Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 300 150 Coss 1 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 100µs Power (W) 10.0 -ID (Amps) 20 1ms 1.0 10ms 10 100ms DC 0.1 100 10s TJ(Max)=150°C TA=25°C 1 0.0 0.00001 0.01 0.1 1 -VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=140°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Jul 2011 www.aosmd.com Page 4 of 5 AO6415 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig Rev 2: Jul 2011 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.aosmd.com Page 5 of 5