Single N-channel MOSFET ELM34406AA-N ■General description ■Features ELM34406AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=40V Id=7.5A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=100°C Continuous drain current Pulsed drain current Ta=25°C Ta=100°C Junction and storage temperature range Power dissipation Symbol Vds Vgs Limit 40 ±20 Unit V V Id 7.5 6.5 A Idm 20 A Pd Tj, Tstg 2.5 1.3 -55 to 150 Note 3 W °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Steady-state Rθja ■Pin configuration Typ. Max. Unit 50 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4- 1 D G S Single N-channel MOSFET ELM34406AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=32V, Vgs=0V Vds=30V, Vgs=0V, Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Static drain-source on-resistance Rds(on) Min. Ta=25°C Typ. Max. Unit Note 40 1.0 20 V 1.5 1 10 μA ±250 nA 2.5 V A Vgs=10V, Id=7.5A 21 28 mΩ 30 19 42 mΩ S 1 1 Forward transconductance Gfs Vgs=4.5V, Id=6.5A Vds=10V, Id=7.5A Diode forward voltage Vsd If=Is, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=10V, f=1MHz 790 175 pF pF Crss 65 pF Qg 16.0 nC 2 2 2 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 1 1 V 1 1.3 2.6 A A 3 Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=10V, Vds=20V, Id=7.5A Qgd td(on) 2.5 2.1 2.2 4.4 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=20V, Id≈1A td(off) Rgen=6Ω 7.5 11.8 15.0 21.3 ns ns 2 2 3.7 15.5 7.9 7.4 ns ns nC 2 Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge tf trr Qrr If=5A, dl/dt=100A/μs If=5A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 NIKO-SEM N-Channel Logic Level Enhancement P2804BVG SingleMode N-channel MOSFET Field Effect Transistor SOP-8 Lead-Free ELM34406AA-N ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 -55° C 0.1 0.01 0.001 4- 3 25° C 1 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement Mode Field Effect Transistor ELM34406AA-N 4- 4 P2804BVG SOP-8 Lead-Free