Single N-channel MOSFET ELM322806A-S ■General description ■Features ELM322806A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=60V Id=30A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 38mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Continuous drain current Ta=25°C Ta=100°C Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Tc=100°C Junction and storage temperature range Power dissipation 60 ±20 30 Id V V A 19 Idm 100 A Ias Eas 30 43 A mJ Pd Tj, Tstg 50 20 - 55 to 150 3 W °C ■Thermal characteristics Parameter Maximum junction-to-case Steady-state Symbol Rθjc Maximum junction-to-ambient Steady-state Rθja ■Pin configuration Typ. Max. 2.5 Unit °C/W 40.0 °C/W Note ■Circuit TO-252-3(TOP VIEW) D TAB 1 2 3 Pin No. 1 2 Pin name GATE DRAIN 3 SOURCE 4-1 G S Single N-channel MOSFET ELM322806A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=40V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Gfs Vsd 60 Vds=48V, Vgs=0V Gate threshold voltage On-state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 1.0 100 1.5 ±250 nA 3.0 V A 1 mΩ 1 1.3 S V 1 1 30 A Vgs=10V, Id=20A 22.3 28.0 Vgs=4.5V, Id=12A 28.0 38.0 Vds=5V, Id=20A If=20A, Vgs=0V 25 Is μA Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=25V, f=1MHz 1500 168 pF pF Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Vgs=0V, Vds=0V, f=1MHz 106 1.3 pF Ω Gate-source charge Qg Qgs 27.4 6.1 nC nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 5.8 8 nC ns 2 2 Turn-on rise time Turn-off delay time tr 6 ns 2 29 ns 2 6 41 ns ns 2 46 nC Turn-off fall time Reverse recovery time Reverse recovery charge Vgs=10V, Vds=30V, Id=20A Vgs=10V, Vds=30V td(off) Id=20A, Rgen=6Ω tf trr Qrr If=20A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4-2 Single N-channel MOSFET ELM322806A-S ■Typical electrical and thermal characteristics � � � � � � � � � � � � � � � 4-3 Single N-channel MOSFET ELM322806A-S � �� �� �� �� 4-4