elm322806a

Single N-channel MOSFET
ELM322806A-S
■General description
■Features
ELM322806A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=60V
Id=30A
Rds(on) < 28mΩ (Vgs=10V)
Rds(on) < 38mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Tc=100°C
Junction and storage temperature range
Power dissipation
60
±20
30
Id
V
V
A
19
Idm
100
A
Ias
Eas
30
43
A
mJ
Pd
Tj, Tstg
50
20
- 55 to 150
3
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Steady-state
Symbol
Rθjc
Maximum junction-to-ambient
Steady-state
Rθja
■Pin configuration
Typ.
Max.
2.5
Unit
°C/W
40.0
°C/W
Note
■Circuit
TO-252-3(TOP VIEW)
D
TAB
1
2
3
Pin No.
1
2
Pin name
GATE
DRAIN
3
SOURCE
4-1
G
S
Single N-channel MOSFET
ELM322806A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=40V, Vgs=0V, Ta=125°C
10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=10V
Gfs
Vsd
60
Vds=48V, Vgs=0V
Gate threshold voltage
On-state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
1.0
100
1.5
±250
nA
3.0
V
A
1
mΩ
1
1.3
S
V
1
1
30
A
Vgs=10V, Id=20A
22.3
28.0
Vgs=4.5V, Id=12A
28.0
38.0
Vds=5V, Id=20A
If=20A, Vgs=0V
25
Is
μA
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=25V, f=1MHz
1500
168
pF
pF
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Crss
Rg Vgs=0V, Vds=0V, f=1MHz
106
1.3
pF
Ω
Gate-source charge
Qg
Qgs
27.4
6.1
nC
nC
2
2
Gate-drain charge
Turn-on delay time
Qgd
td(on)
5.8
8
nC
ns
2
2
Turn-on rise time
Turn-off delay time
tr
6
ns
2
29
ns
2
6
41
ns
ns
2
46
nC
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Vgs=10V, Vds=30V, Id=20A
Vgs=10V, Vds=30V
td(off) Id=20A, Rgen=6Ω
tf
trr
Qrr
If=20A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4-2
Single N-channel MOSFET


ELM322806A-S
 
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■Typical
electrical and thermal characteristics
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4-3

Single N-channel MOSFET

ELM322806A-S
 
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4-4

 
