Dual N-channel MOSFET ELM34806AA-N ■General description ■Features ELM34806AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=40V Id=7A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Symbol Vds Vgs Limit 40 ±20 Unit V V Id 7 6 A Idm 40 A Pd Junction and storage temperature range Tj, Tstg 2.0 1.3 -55 to 150 Note 3 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. Max. 62.5 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) Pin No. Pin name 1 8 1 2 SOURCE1 GATE1 2 7 3 SOURCE2 3 6 4 5 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4- 1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM34806AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=32V, Vgs=0V Vds=30V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) 40 1.0 20 V 1.5 1 10 μA ±100 nA 3.0 V A Vgs=10V, Id=7A 21 28 mΩ 30 24 42 mΩ S Forward transconductance Gfs Vgs=4.5V, Id=6A Vds=10V, Id=5A Diode forward voltage Vsd If=Is, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Min. Ta=25°C Typ. Max. Unit Note 1 1 1 1 V 1 1.3 2.6 A A 3 790 175 pF pF Crss 65 pF Qg 16.0 nC 2 2 2 2 Vgs=0V, Vds=10V, f=1MHz Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=5V, Vds=20V, Id=7A Qgd td(on) 2.5 2.1 2.2 4.4 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=20V, Id≈1A td(off) Rgen=6Ω 7.5 11.8 15.0 21.3 ns ns 2 2 11.0 15.5 7.9 20.0 ns ns nC 2 Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge tf trr Qrr If=5A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 NIKO-SEM P2804HVG Dual N-Channel Enhancement Mode Dual MOSFET FieldN-channel Effect Transistor SOP-8 Lead-Free ELM34806AA-N ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 -55° C 0.1 0.01 0.001 4- 3 25° C 1 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 NIKO-SEM Dual N-Channel Enhancement Mode Dual N-channel MOSFET Field Effect Transistor ELM34806AA-N 4- 4 P2804HVG SOP-8 Lead-Free