Single P-channel MOSFET ELM34405AA-N ■General description ■Features ELM34405AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-40V Id=-5.5A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Symbol Limit Unit Vds Vgs -40 ±20 V V -5.5 -4.5 -20 Id Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Pd Tj, Tstg Note A A 2.5 1.3 -55 to 150 3 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Steady-state Symbol Rθja ■Pin configuration Typ. Max. 50 Unit °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4- 1 D G S Single P-channel MOSFET ELM34405AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -40 Zero gate voltage drain current Idss Vds=-32V, Vgs=0V Vds=-30V,Vgs=0V,Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) ±250 nA -2.5 V A mΩ 65 11 94 mΩ S Diode forward voltage Vsd Is=If, Vgs=0V Max. body-diode continuous current Pulsed body-diode current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-10V, f=1MHz Crss Vgs=-10V, Vds=-20V Id=-5.5A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-20V td(off) Id≈-1A, Rgen=6Ω tf trr Qrr μA 55 Gfs Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -1.5 -1 -10 38 Forward transconductance Qg V Vgs=-10V, Id=-5.5A Vgs=-4.5V, Id=-4.5A Vds=-10V, Id=-5.5A Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge -1.0 -20 Ta=25°C Typ. Max. Unit Note If=-5A, dl/dt=100A/μs If=-5A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 1 1 1 -1 V 1 -1.3 -2.6 A A 3 690 310 pF pF 75 pF 14.0 nC 2 2.2 1.9 6.7 13.4 nC nC ns 2 2 2 9.7 19.8 19.4 35.6 ns ns 2 2 12.3 15.5 7.9 22.2 ns ns nC 2 NIKO-SEM P-Channel Logic Level Enhancement Single P-channel MOSFET P5504EVG Mode Field Effect Transistor ELM34405AA-N SOP-8 Lead-Free ■Typical electrical and thermal characteristics -Is - Reverse Drain Current(A) 100 V GS = 0V 10 1 0.1 25° C -55° C 0.01 0.001 0 4- 3 T A = 125° C 0.8 1.0 1.2 0.2 0.6 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 NIKO-SEM P-Channel Logic Level Enhancement Single P-channel MOSFET Mode Field Effect Transistor ELM34405AA-N 4- 4 P5504EVG SOP-8 Lead-Free