Single N-channel MOSFET ELM32428LA-S ■General description ■Features ELM32428LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=25V Id=75A Rds(on) < 7mΩ (Vgs=10V) Rds(on) < 10mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Gate-source voltage Vgs Continuous drain current Ta=25°C Ta=100°C Repetitive avalanche energy V Idm 170 A Iar 60 A Eas Ear 140 5.6 mJ mJ Id Pulsed drain current Avalanche current Avalanche energy ±20 75 50 L=0.1mH L=0.05mH Tc=25°C Tc=100°C Junction and storage temperature range Power dissipation Pd Tj, Tstg A 60.00 32.75 -55 to 150 3 4 W °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Maximum case-to-heatsink Steady-state Steady-state Symbol Rθjc Rθja Rθcs ■Pin configuration Typ. Max. 2.3 Unit °C/W 62.5 °C/W °C/W 0.6 Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 2 GATE DRAIN 3 SOURCE 3 4-1 G S Single N-channel MOSFET ELM32428LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=20V, Vgs=0V, Ta=125°C 250 Vds=0V, Vgs=±20V ±250 nA 3.0 V A Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 1.0 70 1.5 μA Vgs=10V, Id=30A 5.0 7.0 mΩ Vgs=4.5V, Id=24A 6.6 10.0 mΩ Vds=15V, Id=30A If=Is, Vgs=0V 55 1.3 S V Is 75 A Ism 170 A Gfs Vsd Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time V 25 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Max. body-diode continuous current 25 Vds=20V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 2700 Vgs=0V, Vds=15V, f=1MHz Vgs=4.5V, Vds=15V, Id=25A Vgs=10V, Vds=15V, Id=30A td(off) Rgen=2.5Ω tf trr Peak reverse recovery current Irm(rec) If=Is, dIf/dt=100A/μs Body diode reverse recovery charge Qrr NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1 1 1 1 3 pF 500 200 1100 pF pF 19.0 7.0 25.0 9.0 nC nC 2 2 7.5 11.0 17.0 nC ns 2 2 26.0 ns 2 32.0 48.0 ns 2 7.5 37 11.0 ns ns 2 11.5 17.0 200 0.043 A μC NIKO-SEM N-Channel Level Enhancement Single Logic N-channel MOSFET Mode Field Effect Transistor ELM32428LA-S P75N02LDG TO-252 (DPAK) Lead-Free ■Typical electrical and thermal characteristics 4-3 3 Jun-11-2005 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement ELM32428LA-S Mode Field Effect Transistor P75N02LDG TO-252 (DPAK) Lead-Free 4-4 Jun-11-2005