Single P-channel MOSFET ELM34409AA-N ■General description ■Features ELM34409AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-9A Rds(on) < 20mΩ (Vgs=-10V) Rds(on) < 35mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy L=0.1mH Ta=25°C Power dissipation Ta=70°C Junction and storage temperature range Symbol Vds Limit -30 Unit V Vgs ±25 V Id -9 -7 A Idm Ias -50 -26 A A Eas 34 mJ Pd Tj, Tstg 2.5 Note 3 W 1.6 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Symbol Rθjc Rθja ■Pin configuration Typ. Max. 25 50 Unit °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 4 SOURCE SOURCE GATE 5 6 7 DRAIN DRAIN DRAIN 8 DRAIN 4- 1 D G S Single P-channel MOSFET ELM34409AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Vds=-20V,Vgs=0V, Tj=125°C Gate-body leakage current Igss Vds=0V, Vgs=±25V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) If=-1A, Vgs=0V Is Qg -3.0 V A 1 mΩ 1 S 1 -1.2 V 1 -2.1 A Vgs=0V, Vds=-15V, f=1MHz 1610 410 200 pF pF pF Vgs=15mV, Vds=0V, f=1MHz 3.7 Ω 31.4 nC 2 4.5 8.2 5.7 nC nC ns 2 2 2 10.0 18.0 ns ns 2 2 5.0 ns 2 Vgs=-10V, Vds=-15V Id=-9A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-15V td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω Turn-off fall time nA 35 Vsd Rg ±100 25 24 Diode forward voltage Ciss Coss Crss μA 20 Gfs Gate resistance SWITCHING PARAMETERS Total gate charge -1.5 -1 -10 15 Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance V Vgs=-10V, Id=-9A Vgs=-4.5V, Id=-7A Vds=-10V, Id=-9A Max. body-diode continuous current DYNAMIC PARAMETERS -1.0 9 Ta=25°C Typ. Max. Unit Note tf NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4- 2 NIKO-SEM Single P-channel MOSFET P-Channel ELM34409AA-N Logic Level Enhancement P2003EVG Mode Field Effect Transistor SOP-8 ■Typical electrical and thermal characteristics Halogen-Free & Lead-Free Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V -Is - Reverse Drain Current(A) 10 T A = 125° C 1 25° C 0.1 -55° C 0.01 0.001 0.0001 0 0.6 0.2 0.4 0.8 -VSD - Body Diode Forward Voltage(V) 1.0 1.2 4- 3 REV 0.9 3 Feb-05-2009 NIKO-SEM Single P-channel MOSFET P-Channel Logic Level Enhancement ModeELM34409AA-N Field Effect Transistor P2003EVG SOP-8 Halogen-Free & Lead-Free 4- 4 Feb-05-2009