ELM-TECH ELM34409AA-N

Single P-channel MOSFET
ELM34409AA-N
■General description
■Features
ELM34409AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-9A
Rds(on) < 20mΩ (Vgs=-10V)
Rds(on) < 35mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Ta=25°C
Power dissipation
Ta=70°C
Junction and storage temperature range
Symbol
Vds
Limit
-30
Unit
V
Vgs
±25
V
Id
-9
-7
A
Idm
Ias
-50
-26
A
A
Eas
34
mJ
Pd
Tj, Tstg
2.5
Note
3
W
1.6
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Rθjc
Rθja
■Pin configuration
Typ.
Max.
25
50
Unit
°C/W
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
Pin name
SOURCE
2
3
4
SOURCE
SOURCE
GATE
5
6
7
DRAIN
DRAIN
DRAIN
8
DRAIN
4- 1
D
G
S
Single P-channel MOSFET
ELM34409AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
Min.
BVdss Id=-250μA, Vgs=0V
-30
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Vds=-20V,Vgs=0V, Tj=125°C
Gate-body leakage current
Igss
Vds=0V, Vgs=±25V
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Static drain-source on-resistance
Rds(on)
If=-1A, Vgs=0V
Is
Qg
-3.0
V
A
1
mΩ
1
S
1
-1.2
V
1
-2.1
A
Vgs=0V, Vds=-15V, f=1MHz
1610
410
200
pF
pF
pF
Vgs=15mV, Vds=0V, f=1MHz
3.7
Ω
31.4
nC
2
4.5
8.2
5.7
nC
nC
ns
2
2
2
10.0
18.0
ns
ns
2
2
5.0
ns
2
Vgs=-10V, Vds=-15V
Id=-9A
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Vgs=-10V, Vds=-15V
td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω
Turn-off fall time
nA
35
Vsd
Rg
±100
25
24
Diode forward voltage
Ciss
Coss
Crss
μA
20
Gfs
Gate resistance
SWITCHING PARAMETERS
Total gate charge
-1.5
-1
-10
15
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
V
Vgs=-10V, Id=-9A
Vgs=-4.5V, Id=-7A
Vds=-10V, Id=-9A
Max. body-diode continuous current
DYNAMIC PARAMETERS
-1.0
9
Ta=25°C
Typ. Max. Unit Note
tf
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4- 2
NIKO-SEM
Single P-channel MOSFET
P-Channel ELM34409AA-N
Logic Level Enhancement
P2003EVG
Mode Field Effect Transistor
SOP-8
■Typical electrical and thermal characteristics
Halogen-Free & Lead-Free
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
-Is - Reverse Drain Current(A)
10
T A = 125° C
1
25° C
0.1
-55° C
0.01
0.001
0.0001
0
0.6
0.2
0.4
0.8
-VSD - Body Diode Forward Voltage(V)
1.0
1.2
4- 3
REV 0.9
3
Feb-05-2009
NIKO-SEM
Single P-channel
MOSFET
P-Channel
Logic Level
Enhancement
ModeELM34409AA-N
Field Effect Transistor
P2003EVG
SOP-8
Halogen-Free & Lead-Free
4- 4
Feb-05-2009