Single N-channel MOSFET ELM34418AA-N ■General description ■Features ELM34418AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=22A Rds(on) < 4.0mΩ (Vgs=10V) Rds(on) < 5.0mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±20 22 17 V 100 49 119 A A mJ Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy Id Idm Las Eas L=0.1mH Tc=25°C Tc=70°C Operating junction and storage temperature range Power dissipation Pd Tj, Tstg A 2.7 1.7 -55 to 150 3 W °C ■Thermal characteristics Parameter Maximum junction-to-case Steady-state Symbol Rθjc Maximum junction-to-ambient Steady-state Rθja ■Pin configuration Typ. Max. 25 Unit Note °C/W 45 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. Pin name 1 2 SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single N-channel MOSFET ELM34418AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=20V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V Gfs Vds=5V, Id=20A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is If=20A, Vgs=0V Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Vgs=0V, Vds=15V, f=1MHz Crss Total gate charge(Vgs=4.5V) Gate-source charge Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Vgs=0V, Vds=0V, f=1MHz Qg Qgs Vds=15V, Id=20A Vgs=20V, Vds=15V td(off) Id=20A, Rgen=6Ω tf trr Qrr V 1 Vgs(th) Vds=Vgs, Id=250μA Vgs=10V, Id=20A Rds(on) Vgs=4.5V, Id=16A Rg 30 Vds=24V, Vgs=0V Forward transconductance Gate resistance SWITCHING PARAMETERS Total gate charge(Vgs=10V) Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note If=20A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 1.0 μA ±100 nA 1.5 3.2 3.0 4.0 V 3.7 5.0 100 1 22 mΩ 1 S 1 V A 1 2700 392 302 pF pF pF 0.9 Ω 60 31 9 nC nC nC 2 2 2 14 25 nC ns 2 2 12 ns 2 56 ns 2 10 27 ns ns 2 15 nC Single N-channel MOSFET ELM34418AA-N PV510BA N-Channel Enhancement Mode NIKO-SEM SOP-8 ■Typical electrical and thermalField characteristics Effect Transistor Halogen-Free & Lead-Free Output Characteristics Transfer Characteristics 30 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3.5V 24 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) 30 18 VGS=3V 12 VGS=2.5V 6 24 18 12 25� 6 125� 0 0 0 1 2 3 4 0 1 VDS, Drain-To-Source Voltage(V) 4 3500 3000 C , Capacitance(pF) 1.6 1.4 1.2 1.0 VGS=10V ID=20A 0.8 -50 -25 0 25 50 75 100 125 CISS 2500 2000 1500 1000 500 0 150 COSS CRSS 0 5 TJ , Junction Temperature(C) 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) Gate charge Characteristics Source-Drain Diode Forward Voltage 100 10 VDS=15V ID=20A 8 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) 3 Capacitance Characteristic 1.8 Normalized Drain to Source ON-Resistance 2 VGS, Gate-To-Source Voltage(V) On-Resistance VS Temperature 0.6 -20� 6 4 10 150� 1 25� 2 0 0 10 20 30 40 50 0.1 60 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-To-Drain Voltage(V) Qg , Total Gate Charge(nC) REV 0.9 0.0 3 4-3 C-44-1 Single N-channel MOSFET Safe Operating Area Single Pulse Maximum Power Dissipation 500 Operation in This Area is Limited by RDS(ON) 100 450 � Single Pulse R�JA = 45C/W TA=25C 400 350 Power(W) 100uS 10 ID , Drain Current(A) PV510BA ELM34418AA-N N-Channel Enhancement Mode SOP-8 Field Effect Transistor Halogen-Free & Lead-Free NIKO-SEM 1ms 10ms 1 300 250 200 100ms 0.01 150 NOTE : 1.VGS= 10V 2.TA=25C 3.R�JA = 45C/W 4.Single Pulse 0.1 0.1 100 DC 50 1 10 0 0.0001 100 VDS, Drain-To-Source Voltage(V) 0.001 0.01 0.1 1 Single Pulse Time(s) 10 100 Transient Thermal Response Curve Transient Thermal Resistance r(t) , Normalized Effective 10 1 Duty cycle=0.5 0.2 0.1 0.1 Notes 0.05 0.02 0.01 0.01 1.Duty cycle, D= t1 / t2 2.RthJA = 45 �/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA single pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration[sec] REV 0.9 4 4-4 C-44-1