elm342004a

Single P-channel MOSFET
ELM342004A-N
■General description
■Features
ELM342004A-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-40V
Id=-8.7A
Rds(on) < 20mΩ (Vgs=-10V)
Rds(on) < 32mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-40
V
Gate-source voltage
Vgs
±20
-8.7
V
Ta=25°C
Continuous drain current
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Id
A
Idm
-7.0
-45
Ias
-45
A
Eas
103
2.5
mJ
Pd
Tj, Tstg
A
3
4
W
1.6
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Symbol
Rθjc
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
25
Unit
Note
°C/W
50
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM342004A-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
V
-1
Vds=-30V, Vgs=0V, Ta=55°C
-10
Vds=0V, Vgs=±20V
μA
±100
nA
-3.0
V
A
1
mΩ
1
-1.3
S
V
1
1
Is
-1.9
A
Ism
-45
A
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vds=-5V, Vgs=-10V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
-40
Vds=-32V, Vgs=0V
Gate threshold voltage
On-state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Gfs
Vsd
-1.5
-45
-1.9
Vgs=-10V, Id=-8A
15
20
Vgs=-4.5V, Id=-6A
23
32
Vds=-5V, Id=-8A
If=-8A, Vgs=0V
30
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Ciss
2670
pF
Output capacitance
Reverse transfer capacitance
Coss Vgs=0V, Vds=-30V, f=1MHz
Crss
392
280
pF
pF
4.65
Ω
50
nC
2
10
13
nC
nC
2
2
10
ns
2
20
ns
2
55
30
ns
ns
2
2
26
17
ns
nC
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Qg
Gate-source charge
Gate-drain charge
Qgs
Qgd
Turn-on delay time
Turn-on rise time
td(on)
Turn-off delay time
Turn-off fall time
td(off) RL=1Ω, Id=-8A, Rgen=6Ω
tf
Reverse recovery time
Reverse recovery charge
Rg
tr
trr
Qrr
Vgs=0V, Vds=0V, f=1MHz
Vgs=-10V, Vds=-20V
Id=-8A
Vgs=-10V, Vds=-30V
If=-8A, dIf/dt=100A/μs
NOTE :
1. Pulsed test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Vdd=-20V. Starting Tj=25°C.
4-2
3
Single P-channel MOSFET
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ELM342004A-N
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■Typical
electrical
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
Single
P-channel MOSFET

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



ELM342004A-N


 









  
 


 













4-4
