elm323506a

Single P-channel MOSFET
ELM323506A-S
■General description
■Features
ELM323506A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-60V
Id=-26A
Rds(on) < 35mΩ (Vgs=-10V)
Rds(on) < 55mΩ (Vgs=-7V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Continuous drain current
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Tc=100°C
Junction and storage temperature range
Power dissipation
-60
±20
-26
Id
V
V
A
-16
Idm
-100
A
3
Ias
Eas
-39
77
A
mJ
5
Pd
Tj, Tstg
42
17
-55 to 150
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Symbol
Rθjc
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
3
Unit
°C/W
50
°C/W
Note
■Circuit
TO-252-3(TOP VIEW)
D
TAB
1
2
3
Pin No.
1
2
Pin name
GATE
DRAIN
3
SOURCE
4-1
G
S
Single P-channel MOSFET
ELM323506A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=-40V, Vgs=0V, Ta=55°C
-10
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
V
-1
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vds=-5V, Vgs=-10V
Gfs
Vsd
-60
Vds=-48V, Vgs=0V
Gate threshold voltage
On-state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-2.0
-100
-2.7
±100
nA
-4.0
V
A
1
mΩ
1
-1.3
S
V
1
1
-26
A
Vgs=-10V, Id=-25A
29
35
Vgs=-7V, Id=-20A
32
55
Vds=-5V, Id=-25A
If=-25A, Vgs=0V
15
Is
μA
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=-30V, f=1MHz
2550
241
pF
pF
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Crss
Rg Vgs=0V, Vds=0V, f=1MHz
140
4.85
pF
Ω
39
13
nC
nC
2
2
8
30
nC
ns
2
2
90
ns
2
70
ns
2
15
30
ns
ns
2
100
nC
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Vgs=-10V, Vds=-30V
Id=-25A
Vgs=-10V, Vds=-30V, RL=1Ω
td(off) Id=-20A, Rgen=6Ω
tf
trr
Qrr
If=-25A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
5. Vdd=-30V, Starting Tj=25°C.
4-2
Single P-channel MOSFET
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  
ELM323506A-S

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electrical
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Single P-channel MOSFET   

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ELM323506A-S
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













   
 

















4-4
