Single P-channel MOSFET ELM323506A-S ■General description ■Features ELM323506A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-60V Id=-26A Rds(on) < 35mΩ (Vgs=-10V) Rds(on) < 55mΩ (Vgs=-7V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Continuous drain current Ta=25°C Ta=100°C Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Tc=100°C Junction and storage temperature range Power dissipation -60 ±20 -26 Id V V A -16 Idm -100 A 3 Ias Eas -39 77 A mJ 5 Pd Tj, Tstg 42 17 -55 to 150 W °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. 3 Unit °C/W 50 °C/W Note ■Circuit TO-252-3(TOP VIEW) D TAB 1 2 3 Pin No. 1 2 Pin name GATE DRAIN 3 SOURCE 4-1 G S Single P-channel MOSFET ELM323506A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-40V, Vgs=0V, Ta=55°C -10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vds=-5V, Vgs=-10V Gfs Vsd -60 Vds=-48V, Vgs=0V Gate threshold voltage On-state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -2.0 -100 -2.7 ±100 nA -4.0 V A 1 mΩ 1 -1.3 S V 1 1 -26 A Vgs=-10V, Id=-25A 29 35 Vgs=-7V, Id=-20A 32 55 Vds=-5V, Id=-25A If=-25A, Vgs=0V 15 Is μA Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-30V, f=1MHz 2550 241 pF pF Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Vgs=0V, Vds=0V, f=1MHz 140 4.85 pF Ω 39 13 nC nC 2 2 8 30 nC ns 2 2 90 ns 2 70 ns 2 15 30 ns ns 2 100 nC Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Reverse recovery time Reverse recovery charge Vgs=-10V, Vds=-30V Id=-25A Vgs=-10V, Vds=-30V, RL=1Ω td(off) Id=-20A, Rgen=6Ω tf trr Qrr If=-25A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 5. Vdd=-30V, Starting Tj=25°C. 4-2 Single P-channel MOSFET ELM323506A-S ■Typical electrical and thermal characteristics � � � � � � � � � 4-3 Single P-channel MOSFET ELM323506A-S � � �� �� �� �� �� � � � � � � � � � 4-4