Complementary MOSFET ELM544539A-N ■General Description ■Features ELM544539A-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • N-channel Vds=30V, Id=5.0A, Rds(on)=36mΩ(Vgs=10V) Vds=30V, Id=4.7A, Rds(on)=46mΩ(Vgs=4.5V) • P-channel Vds=-30V, Id=-5.4A, Rds(on)=62mΩ(Vgs=-10V) Vds=-30V, Id=-4.2A, Rds(on)=90mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Vds Vgs 30 ±20 -30 ±20 5.4 4.0 20 -5.4 -4.2 -30 Pd 2.8 1.8 2.8 1.8 W Tj,Tstg -55 to 150 -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit V V A A ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol Device Rθja Rθja N-ch P-ch Steady-state Steady-state ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. Unit 62.5 62.5 °C/W °C/W ■Circuit Pin No. 1 2 Pin name SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 DRAIN2 DRAIN1 8 DRAIN1 8-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM544539A-N ■Electrical Characteristics (N-ch) Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current BVdss Id=250μA, Vgs=0V Idss Vds=24V, Vgs=0V 30 1 Ta=85°C 30 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA 1.3 On state drain current Id(on) Vgs=4.5V, Vds=5V 10 Static drain-source on-resistance Forward transconductance Diode forward voltage Max.body-diode continuous current DYNAMIC PARAMETERS 30 40 Gfs Vsd Vds=15V, Id=5.2A Is=1.6A, Vgs=0V 13 0.8 Is Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Coss Crss Qg Qgs Qgd Vgs=0V, Vds=20V, f=1MHz μA nA V A Vgs=10V, Id=5.0A Vgs=4.5V, Id=4.7A Ciss Turn-on rise time Turn-off delay time Turn-off fall time ±100 2.1 Rds(on) Input capacitance Gate-source charge Gate-drain charge Turn-on delay time V 36 46 mΩ 1.3 S V 1.5 A 700 pF 75 45 pF pF 12.0 Vgs=4.5V, Vds=20V, Id=5.2A 8.0 1.6 2.4 nC nC nC td(on) tr Vgs=10V, Vds=15V, Id=1.0A td(off) RL=15Ω, Rgen=6Ω 8 12 28 12 18 40 ns ns ns 10 18 ns tf 8-2 AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET Complementary MOSFET ELM544539A-N Typical Characteristics ( N-Channel ) ■Typical Electrical and Thermal Characteristics (N-ch) ©Alfa-MOS Technology Corp. Rev.A July 2010 www.alfa-mos.com Page 4 8-3 AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET Complementary MOSFET ELM544539A-N Typical Characteristics ( N-Channel ) ©Alfa-MOS Technology Corp. Rev.A July 2010 www.alfa-mos.com Page 5 8-4 Complementary MOSFET ELM544539A-N ■Electrical Characteristics (P-ch) Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current BVdss Id=-250μA, Vgs=0V Idss Vds=-24V, Vgs=0V -30 -1 Ta=85°C -30 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA -1.0 On state drain current Id(on) Vgs=-10V, Vds=-5V -25 Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS 52 70 Gfs Vsd Vds=-10V, Id=-4.9A Is=-1.7A, Vgs=0V 10 -0.8 Is Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Coss Crss Qg Qgs Qgd Vgs=0V, Vds=-15V, f=1MHz Vgs=-10V, Vds=-15V Id=-5.0A td(on) tr Vgs=-10V, Vds=-15V td(off) Id=-1.0A, RL=15Ω, Rgen=6Ω tf 8-5 μA nA V A Vgs=-10V, Id=-5.4A Vgs=-4.5V, Id=-4.2A Ciss Turn-on rise time Turn-off delay time Turn-off fall time ±100 -2.5 Rds(on) Input capacitance Gate-source charge Gate-drain charge Turn-on delay time V 62 90 mΩ -1.3 S V -1.7 A 500 pF 100 55 pF pF 10.0 1.6 3.0 18.0 nC nC nC 8 8 25 18 18 50 ns ns ns 25 35 ns AFC4539WS Alfa-MOS 30V N & P Pair Technology Complementary MOSFET Enhancement Mode MOSFET ELM544539A-N ■Typical Electrical and Thermal Characteristics (P-ch) Typical Characteristics ( P-Channel ) ©Alfa-MOS Technology Corp. Rev.A July 2010 www.alfa-mos.com Page 6 8-6 AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET Complementary MOSFET ELM544539A-N Typical Characteristics ( P-Channel ) ©Alfa-MOS Technology Corp. Rev.A July 2010 www.alfa-mos.com Page 7 8-7 AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET Complementary MOSFET ELM544539A-N ■Test circuit and waveform Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A July 2010 www.alfa-mos.com Page 8 8-8