SHENZHENFREESCALE AO3438

AO3438
20V N-Channel MOSFET
General Description
The AO3438 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
Features
VDS = 20V
ID = 3A
(VGS = 4.5V)
RDS(ON) < 62mΩ
(VGS = 4.5V)
RDS(ON) < 70mΩ
(VGS = 2.5V)
RDS(ON) < 85mΩ
(VGS = 1.8V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
TA=70°C
TA=25°C
Power Dissipation
Junction and Storage Temperature Range
Maximum Junction-to-Lead
1/4
C
±8
V
ID
2.5
IDM
16
W
0.9
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
1.4
PD
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Units
V
3
Pulsed Drain Current B
A
Maximum
20
RθJA
RθJL
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
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AO3438
20V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
ID=250µA, VGS=0V
Typ
V
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
16
TJ=55°C
VGS=4.5V, ID=3A
5
0.7
V
62
VGS=2.5V, ID=2.8A
58
70
mΩ
85
mΩ
VGS=1.8V, ID=2.5A
68
VDS=5V, ID=3A
11
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
1
85
Forward Transconductance
Rg
nA
51
gFS
Reverse Transfer Capacitance
100
68
TJ=125°C
Static Drain-Source On-Resistance
Output Capacitance
260
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=4.5V, VDS=10V, ID=3A
1
V
2
A
320
pF
48
pF
pF
3
4.5
Ω
2.9
3.8
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=3A, dI/dt=100A/µs
14
Qrr
Body Diode Reverse Recovery Charge IF=3A, dI/dt=100A/µs
3.8
VGS=5V, VDS=10V, RL=3.3Ω,
RGEN=6Ω
mΩ
S
27
Body Diode Reverse Recovery Time
µA
A
RDS(ON)
Crss
Units
20
VDS=20V, VGS=0V
IDSS
Coss
Max
0.4
nC
0.6
nC
2.5
ns
3.2
ns
21
ns
3
ns
19
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev2: Nov. 2010
2
FR-4 board with 2oz. Copper, in a still12
air environment with T A=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO3438
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
16
VDS=5V
4.5V
12
ID(A)
ID (A)
2V
2.5V
12
8
8
VGS=1.5V
4
4
125°C
25°C
0
0
0
1
2
3
4
5
0
0.5
VDS (Volts)
Figure 1: On-Region Characteristics
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
1.6
Normalized On-Resistance
120
100
RDS(ON) (mΩ )
1
VGS=1.8V
80
VGS=2.5V
60
VGS=1.8V
ID=2A
1.4
VGS=2.5V
ID=2.8A
VGS=4.5V
ID=3A
1.2
1
VGS=4.5V
40
0.8
0
3
6
9
12
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
120
1E+01
ID=3A
1E+00
12
125°C
1E-01
80
IS (A)
RDS(ON) (mΩ )
100
125°C
1E-02
25°C
1E-03
60
1E-04
25°C
40
1E-05
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO3438
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
400
VDS=10V
ID=3A
3
2
Ciss
300
Capacitance (pF)
VGS (Volts)
4
200
Coss
100
1
0
Crss
0
0
0.5
1
1.5
2
2.5
3
0
3.5
5
10
1000
100.00
20
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
10.00
Power (W)
100µ
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1m
s
10ms
1.00
RDS(ON)
limited
100
0.1s
0.10
DC
1s
1
0.00001
0.01
0.1
1
10
10
100
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
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