Complementary MOSFET ELM544599A-N ■General Description ■Features ELM544599A-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V) • P-channel Vds=-40V, Id=-7.2A, Rds(on)=42mΩ(Vgs=-10V) Vds=-40V, Id=-6.2A, Rds(on)=60mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Vds Vgs 40 ±20 -40 ±20 8.0 6.0 25 -7.2 -6.2 -25 Pd 2.8 1.8 2.8 1.8 W Tj,Tstg -55 to 150 -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit V V A A ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol Device Rθja Rθja N-ch P-ch Steady-state Steady-state ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. Unit 62.5 62.5 °C/W °C/W ■Circuit Pin No. 1 2 Pin name SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 DRAIN2 DRAIN1 8 DRAIN1 8-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM544599A-N ■Electrical Characteristics (N-ch) Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current BVdss Id=250μA, Vgs=0V Idss Vds=32V, Vgs=0V 40 1 Ta=85°C 10 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA 1.0 On state drain current Id(on) Vgs=10V, Vds=5V 20 Static drain-source on-resistance Forward transconductance Diode forward voltage Max.body-diode continuous current DYNAMIC PARAMETERS 16 20 Gfs Vsd Vds=15V, Id=5.0A Is=2A, Vgs=0V 25 0.85 Is Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Coss Crss Qg Qgs Qgd Vgs=0V, Vds=20V, f=1MHz Vgs=4.5V, Vds=20V, Id=5A td(on) tr Vgs=10V, Vds=20V, Id=5.0A td(off) RL=4Ω, Rgen=1Ω tf 8-2 μA nA V A Vgs=10V, Id=8.0A Vgs=4.5V, Id=6.0A Ciss Turn-on rise time Turn-off delay time Turn-off fall time ±100 3.0 Rds(on) Input capacitance Gate-source charge Gate-drain charge Turn-on delay time V 22 28 mΩ 1.20 S V 1.5 A 850 pF 110 75 pF pF 10.0 2.8 3.2 14.0 nC nC nC 6 10 20 12 20 36 ns ns ns 6 12 ns AFP4599W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET Complementary MOSFET ELM544599A-N Typical Characteristics N-Channel ■Typical Electrical (and Thermal) Characteristics (N-ch) ©Alfa-MOS Technology Corp. Rev.A Apr. 2012 www.alfa-mos.com Page 4 8-3 AFP4599W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET Complementary MOSFET ELM544599A-N Typical Characteristics ( N-Channel ) ©Alfa-MOS Technology Corp. Rev.A Apr. 2012 www.alfa-mos.com Page 5 8-4 Complementary MOSFET ELM544599A-N ■Electrical Characteristics (P-ch) Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current BVdss Id=-250μA, Vgs=0V Idss Vds=-32V, Vgs=0V -40 -1 Ta=85°C -20 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA -1.0 On state drain current Id(on) Vgs=-10V, Vds=-5V -20 Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Rds(on) Gfs Vsd Ciss Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Coss Crss Turn-on rise time Turn-off delay time Turn-off fall time ±100 -3.0 Vgs=-10V, Id=-7.2A Vgs=-4.5V, Id=-6.2A 34 50 Vds=-15V, Id=-5A Is=-2A, Vgs=0V 20 -0.8 Qg Qgs Qgd Vgs=0V, Vds=-20V, f=1MHz Vgs=-4.5V, Vds=-20V Id=-5A td(on) tr Vgs=-4.5V, Vds=-20V td(off) Id=-5A, RL=4Ω, Rgen=1Ω tf 8-5 μA nA V A Is Input capacitance Gate-source charge Gate-drain charge Turn-on delay time V 42 60 mΩ -1.2 S V -1.7 A pF 1100 145 115 pF pF 13.0 4.5 6.5 20.0 nC nC nC 40 55 30 80 100 60 ns ns ns 12 20 ns AFP4599W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET Complementary MOSFET ELM544599A-N ■Typical Electrical and Thermal )Characteristics (P-ch) Typical Characteristics ( P-Channel ©Alfa-MOS Technology Corp. Rev.A Apr. 2012 www.alfa-mos.com Page 6 8-6 AFP4599W Alfa-MOS 40V N & P Pair Enhancement Mode MOSFET Complementary MOSFET Technology ELM544599A-N Typical Characteristics ( P-Channel ) ©Alfa-MOS Technology Corp. Rev.A Apr. 2012 www.alfa-mos.com Page 7 8-7 AFP4599W Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET Complementary MOSFET ELM544599A-N Typical Characteristics ■Test circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Apr. 2012 www.alfa-mos.com Page 8 8-8