VISHAY TLHGY420

TLHG / O / P / R / Y420.
VISHAY
Vishay Semiconductors
High Efficiency LED, ∅ 3 mm Tinted Undiffused Package
Description
The TLH.42.. series was developed for standard
applications like general indicating and lighting purposes.
It is housed in a 3 mm tinted clear plastic package.
The wide viewing angle of these devices provides a
high on-off contrast.
Several selection types with different luminous intensities are offered. All LEDs are categorized in luminous intensity groups. The green and yellow LEDs
are categorized additionally in wavelength groups.
That allows users to assemble LEDs with uniform
appearance.
Features
•
•
•
•
•
•
•
•
Choice of five bright colors
Standard T-1 package
Small mechanical tolerances
Suitable for DC and high peak current
Wide viewing angle
Luminous intensity categorized
Yellow and green color categorized
Lead-free device
19220
e3 Pb
Pb-free
Applications
Status lights
OFF / ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
Parts Table
Part
Color, Luminous Intensity
Angle of Half Intensity (±ϕ)
Technology
TLHR4200
Red, IV > 4 mcd
22 °
GaAsP on GaP
TLHR4201
Red, IV > 6.3 mcd
22 °
GaAsP on GaP
TLHR4205
Red, IV > 10 mcd
22 °
GaAsP on GaP
TLHO4200
Soft orange, IV > 4 mcd
22 °
GaAsP on GaP
TLHO4201
Soft orange, IV > 10 mcd
22 °
GaAsP on GaP
TLHY4200
Yellow, IV > 4 mcd
22 °
GaAsP on GaP
TLHY4201
Yellow, IV > 6.3 mcd
22 °
GaAsP on GaP
TLHY4205
Yellow, IV > 10 mcd
22 °
GaAsP on GaP
TLHG4200
Green, IV > 6.3 mcd
22 °
GaP on GaP
TLHG4201
Green, IV > 10 mcd
22 °
GaP on GaP
TLHG4205
Green, IV > 16 mcd
22 °
GaP on GaP
TLHP4200
Pure green, IV > 2.5 mcd
22 °
GaP on GaP
TLHP4201
Pure green, IV > 6.3 mcd
22 °
GaP on GaP
Document Number 83005
Rev. 1.3, 31-Aug-04
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TLHG / O / P / R / Y420.
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLHR42.. ,TLHO42.. , TLHY42.. , TLHG42.. , TLHP42..
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
6
V
DC Forward current
IF
30
mA
Surge forward current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 60 °C
Unit
IFSM
1
A
PV
100
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 100
°C
Tsd
260
°C
RthJA
400
K/W
Junction temperature
Soldering temperature
t ≤ 5 s, 2 mm from body
Thermal resistance junction/
ambient
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLHR42..
Parameter
Luminous intensity
1)
Test condition
IF = 10 mA
Part
Symbol
Min
Typ.
TLHR4200
IV
4
8
mcd
TLHR4201
IV
6.3
10
mcd
TLHR4205
IV
10
15
mcd
612
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
635
625
Angle of half intensity
IF = 10 mA
ϕ
± 22
Forward voltage
IF = 20 mA
VF
2
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
6
Max
Unit
nm
nm
deg
3
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Soft Orange
TLHO42..
Parameter
Luminous intensity
1)
Test condition
IF = 10 mA
Part
Symbol
Min
Typ.
TLHO4200
IV
4
10
18
Max
Unit
mcd
IV
10
Dominant wavelength
IF = 10 mA
λd
598
Peak wavelength
IF = 10 mA
λp
605
nm
Angle of half intensity
IF = 10 mA
ϕ
± 22
deg
Forward voltage
IF = 20 mA
VF
2.4
TLHO4201
Reverse current
VR = 6 V
IR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
50
nm
3
V
10
µA
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
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2
mcd
611
Document Number 83005
Rev. 1.3, 31-Aug-04
TLHG / O / P / R / Y420.
VISHAY
Vishay Semiconductors
Yellow
TLHY42..
Parameter
Luminous intensity
1)
Test condition
IF = 10 mA
Part
Symbol
Min
Typ.
TLHY4200
IV
4
10
Max
Unit
TLHY4201
IV
6.3
15
mcd
TLHY4205
IV
10
20
mcd
581
mcd
Dominant wavelength
IF = 10 mA
λd
Peak wavelength
IF = 10 mA
λp
585
nm
Angle of half intensity
IF = 10 mA
ϕ
± 22
deg
Forward voltage
IF = 20 mA
VF
2.4
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
6
594
3
nm
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Green
TLHG42..
Parameter
Luminous intensity 1)
Test condition
IF = 10 mA
Part
Symbol
Min
Typ.
TLHG4200
IV
6.3
10
mcd
TLHG4201
IV
10
15
mcd
20
IV
16
Dominant wavelength
IF = 10 mA
λd
562
Peak wavelength
IF = 10 mA
λp
565
TLHG4205
IF = 10 mA
ϕ
± 22
Forward voltage
IF = 20 mA
VF
2.4
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
Unit
mcd
575
Angle of half intensity
6
Max
nm
nm
deg
3
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Pure green
TLHP42..
Parameter
Test condition
Part
Symbol
Min
Typ.
TLHP4200
IV
2.5
7
Max
Unit
Luminous intensity 1)
IF = 10 mA
IV
6.3
20
mcd
Dominant wavelength
IF = 10 mA
λd
555
565
nm
Peak wavelength
IF = 10 mA
λp
555
nm
Angle of half intensity
IF = 10 mA
ϕ
± 22
deg
TLHP4201
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
1)
2.4
6
mcd
3
V
15
V
50
pF
in one Packing Unit IVmin/IVmax ≤ 0.5
Document Number 83005
Rev. 1.3, 31-Aug-04
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TLHG / O / P / R / Y420.
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
0°
IVrel - Relative Luminous Intensity
PV - Power Dissipation ( mW )
125
100
75
50
25
0
0
20
40
60
80
20 °
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
100
Tamb - Ambient Temperature ( °C )
95 10904
10 °
0.4
0.2
0
0.2
0.4
0.6
95 10041
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
1000
I F - Forward Current ( mA )
IF - Forward Current ( mA)
60
50
40
30
20
Red
100
1
10
0.1
0
0
20
40
60
80
0
100
Tamb - Ambient Temperature ( °C )
95 10905
IF - Forward Current ( mA )
Tamb ≤ı 65 ° C
t p /T= 0.01
0.02
0.05
100
1
10
0.5 0.2
1
0.01
0.1
0.1
1
10
6
8
10
Red
1.2
0.8
0.4
I F = 10 mA
0
100
Figure 3. Forward Current vs. Pulse Length
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1.6
0
t p - Pulse Length ( ms )
95 10047
4
V F - Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
I v rel - Relative Luminous Intensity
10000
1000
2
95 10026
Figure 2. Forward Current vs. Ambient Temperature for InGaN
4
t p /T = 0.001
t p = 10 µs
10
95 10027
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83005
Rev. 1.3, 31-Aug-04
TLHG / O / P / R / Y420.
VISHAY
Vishay Semiconductors
100
Soft Orange
Red
I F - Forward Current ( mA )
I V re l - Relative Luminous Intensity
2.4
2.0
1.6
1.2
0.8
10
1
0.4
0.1
0
0
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
95 10321
95 9990
4
5
2.0
10
Red
I v rel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
3
Figure 10. Forward Current vs. Forward Voltage
1
0.1
Soft Orange
1.6
1.2
0.8
0.4
0
0.01
1
10
0
100
I F - Forward Current ( mA )
95 10029
20
40
60
80
100
Tamb - Ambient Temperature (° C )
95 9994
Figure 8. Relative Luminous Intensity vs. Forward Current
Figure 11. Rel. Luminous Intensity vs. Ambient Temperature
1.2
2.4
Red
I V re l - Relative Luminous Intensity
I V re l - Relative Luminous Intensity
2
V F - Forward Voltage ( V )
tp /T
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
1.0
0.8
0.6
0.4
0.2
0
590
95 10040
1
Soft Orange
2.0
1.6
1.2
0.8
0.4
0
610
630
650
670
690
λ -ı Wavelength ( nm )
Figure 9. Relative Intensity vs. Wavelength
Document Number 83005
Rev. 1.3, 31-Aug-04
95 10259
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
tp /T
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
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TLHG / O / P / R / Y420.
VISHAY
10
I v rel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
Vishay Semiconductors
Soft Orange
1
0.1
1.6
1.2
0.8
0.4
0
0.01
1
10
100
I F - Forward Current ( mA )
95 9997
I v rel - Relative Luminous Intensity
IVrel - Relative Luminous Intensity
Soft Orange
1.0
0.8
0.6
0.4
0.2
610
630
650
t p /T = 0.001
t p = 10 µs
10
1
0.1
0
2
4
6
8
10
V F - Forward Voltage ( V )
95 10030
Figure 15. Forward Current vs. Forward Voltage
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6
80
100
1.6
1.2
0.8
0.4
10
20
50
100
200
500 I F (mA)
1
0.5
0.2
0.1
0.05
0.02
tp /T
Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
I v rel - Relative Luminous Intensity
I F - Forward Current ( mA )
Yellow
60
Yellow
2.0
0
1000
100
40
Tamb - Ambient Temperature ( °C )
95 10260
Figure 14. Relative Intensity vs. Wavelength
20
2.4
670
λ - Wavelength ( nm )
95 10324
0
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
1.2
590
I F = 10 mA
95 10031
Figure 13. Relative Luminous Intensity vs. Forward Current
0
570
Yellow
10
Yellow
1
0.1
0.01
1
95 10033
10
100
I F - Forward Current ( mA )
Figure 18. Relative Luminous Intensity vs. Forward Current
Document Number 83005
Rev. 1.3, 31-Aug-04
TLHG / O / P / R / Y420.
VISHAY
Vishay Semiconductors
2.4
Yellow
1.0
I v rel - Specific Luminous Intensity
IVrel - Relative Luminous Intensity
1.2
0.8
0.6
0.4
0.2
0
550
570
590
610
630
1.2
0.8
0.4
0
95 10263
Figure 19. Relative Intensity vs. Wavelength
I v rel - Relative Luminous Intensity
Green
100
t p /T = 0.001
t p = 10 µs
10
1
10
1
20
0.5
50
0.2
100
0.1
500 IF(mA)
0.02 tp/T
200
0.05
Figure 22. Specific Luminous Intensity vs. Forward Current
1000
I F - Forward Current ( mA )
1.6
650
λ - Wavelength
( nm )
95 10039
Green
2.0
10
Green
1
0.1
0.1
0
2
4
6
8
V F - Forward Voltage ( V )
95 10034
0.8
95 10035
I F = 10 mA
0
20
40
60
80
100
T amb - Ambient Temperature ( ° C )
Figure 21. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83005
Rev. 1.3, 31-Aug-04
Figure 23. Relative Luminous Intensity vs. Forward Current
IVrel - Relative Luminous Intensity
I v rel - Relative Luminous Intensity
1.2
0
100
1.2
Green
0.4
10
I F - Forward Current ( mA )
95 10037
Figure 20. Forward Current vs. Forward Voltage
1.6
1
10
Green
1.0
0.8
0.6
0.4
0.2
0
520
95 10038
540
560
580
600
620
λ - Wavelength
( nm )
Figure 24. Relative Intensity vs. Wavelength
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TLHG / O / P / R / Y420.
VISHAY
Vishay Semiconductors
10
I Vrel - Relative Luminous Intensity
100
I F – Forward Current ( mA )
Pure Green
10
1
0
1
2
3
4
0.1
1
5
V F – Forward Voltage ( V )
95 9988
10
100
I F - Forward Current ( mA )
95 9998
Figure 25. Forward Current vs. Forward Voltage
Figure 28. Relative Luminous Intensity vs. Forward Current
1.2
2.0
Pure Green
I Vrel - Relative Luminous Intensity
I Vrel - Relative Luminous Intensity
1
0.01
0.1
1.6
1.2
0.8
0.4
0
Pure Green
0
20
40
60
80
100
Tamb − Ambient Temperature ( °C )
95 9991
0.8
0.6
0.4
0.2
0
500
95 10325
Figure 26. Rel. Luminous Intensity vs. Ambient Temperature
Pure Green
1.0
520
540
560
580
600
λ - Wavelength ( nm )
Figure 29. Relative Intensity vs. Wavelength
2.4
I Spec - Specific Luninous Flux
Pure Green
2.0
1.6
1.2
0.8
0.4
0
10
95 10261
100
1000
I F - Forward Current ( mA )
Figure 27. Specific Luminous Intensity vs. Forward Current
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Document Number 83005
Rev. 1.3, 31-Aug-04
VISHAY
TLHG / O / P / R / Y420.
Vishay Semiconductors
Package Dimensions in mm
95 10913
Document Number 83005
Rev. 1.3, 31-Aug-04
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TLHG / O / P / R / Y420.
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83005
Rev. 1.3, 31-Aug-04