TLHG / O / P / R / Y420. VISHAY Vishay Semiconductors High Efficiency LED, ∅ 3 mm Tinted Undiffused Package Description The TLH.42.. series was developed for standard applications like general indicating and lighting purposes. It is housed in a 3 mm tinted clear plastic package. The wide viewing angle of these devices provides a high on-off contrast. Several selection types with different luminous intensities are offered. All LEDs are categorized in luminous intensity groups. The green and yellow LEDs are categorized additionally in wavelength groups. That allows users to assemble LEDs with uniform appearance. Features • • • • • • • • Choice of five bright colors Standard T-1 package Small mechanical tolerances Suitable for DC and high peak current Wide viewing angle Luminous intensity categorized Yellow and green color categorized Lead-free device 19220 e3 Pb Pb-free Applications Status lights OFF / ON indicator Background illumination Readout lights Maintenance lights Legend light Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLHR4200 Red, IV > 4 mcd 22 ° GaAsP on GaP TLHR4201 Red, IV > 6.3 mcd 22 ° GaAsP on GaP TLHR4205 Red, IV > 10 mcd 22 ° GaAsP on GaP TLHO4200 Soft orange, IV > 4 mcd 22 ° GaAsP on GaP TLHO4201 Soft orange, IV > 10 mcd 22 ° GaAsP on GaP TLHY4200 Yellow, IV > 4 mcd 22 ° GaAsP on GaP TLHY4201 Yellow, IV > 6.3 mcd 22 ° GaAsP on GaP TLHY4205 Yellow, IV > 10 mcd 22 ° GaAsP on GaP TLHG4200 Green, IV > 6.3 mcd 22 ° GaP on GaP TLHG4201 Green, IV > 10 mcd 22 ° GaP on GaP TLHG4205 Green, IV > 16 mcd 22 ° GaP on GaP TLHP4200 Pure green, IV > 2.5 mcd 22 ° GaP on GaP TLHP4201 Pure green, IV > 6.3 mcd 22 ° GaP on GaP Document Number 83005 Rev. 1.3, 31-Aug-04 www.vishay.com 1 TLHG / O / P / R / Y420. VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLHR42.. ,TLHO42.. , TLHY42.. , TLHG42.. , TLHP42.. Symbol Value Reverse voltage Parameter Test condition VR 6 V DC Forward current IF 30 mA Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60 °C Unit IFSM 1 A PV 100 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 100 °C Tsd 260 °C RthJA 400 K/W Junction temperature Soldering temperature t ≤ 5 s, 2 mm from body Thermal resistance junction/ ambient Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLHR42.. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLHR4200 IV 4 8 mcd TLHR4201 IV 6.3 10 mcd TLHR4205 IV 10 15 mcd 612 Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 635 625 Angle of half intensity IF = 10 mA ϕ ± 22 Forward voltage IF = 20 mA VF 2 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 6 Max Unit nm nm deg 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Soft Orange TLHO42.. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLHO4200 IV 4 10 18 Max Unit mcd IV 10 Dominant wavelength IF = 10 mA λd 598 Peak wavelength IF = 10 mA λp 605 nm Angle of half intensity IF = 10 mA ϕ ± 22 deg Forward voltage IF = 20 mA VF 2.4 TLHO4201 Reverse current VR = 6 V IR Junction capacitance VR = 0, f = 1 MHz Cj 1) 50 nm 3 V 10 µA pF in one Packing Unit IVmin/IVmax ≤ 0.5 www.vishay.com 2 mcd 611 Document Number 83005 Rev. 1.3, 31-Aug-04 TLHG / O / P / R / Y420. VISHAY Vishay Semiconductors Yellow TLHY42.. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLHY4200 IV 4 10 Max Unit TLHY4201 IV 6.3 15 mcd TLHY4205 IV 10 20 mcd 581 mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 585 nm Angle of half intensity IF = 10 mA ϕ ± 22 deg Forward voltage IF = 20 mA VF 2.4 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 6 594 3 nm V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Green TLHG42.. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLHG4200 IV 6.3 10 mcd TLHG4201 IV 10 15 mcd 20 IV 16 Dominant wavelength IF = 10 mA λd 562 Peak wavelength IF = 10 mA λp 565 TLHG4205 IF = 10 mA ϕ ± 22 Forward voltage IF = 20 mA VF 2.4 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) Unit mcd 575 Angle of half intensity 6 Max nm nm deg 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Pure green TLHP42.. Parameter Test condition Part Symbol Min Typ. TLHP4200 IV 2.5 7 Max Unit Luminous intensity 1) IF = 10 mA IV 6.3 20 mcd Dominant wavelength IF = 10 mA λd 555 565 nm Peak wavelength IF = 10 mA λp 555 nm Angle of half intensity IF = 10 mA ϕ ± 22 deg TLHP4201 Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 2.4 6 mcd 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Document Number 83005 Rev. 1.3, 31-Aug-04 www.vishay.com 3 TLHG / O / P / R / Y420. VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0° IVrel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 125 100 75 50 25 0 0 20 40 60 80 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 100 Tamb - Ambient Temperature ( °C ) 95 10904 10 ° 0.4 0.2 0 0.2 0.4 0.6 95 10041 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Rel. Luminous Intensity vs. Angular Displacement 1000 I F - Forward Current ( mA ) IF - Forward Current ( mA) 60 50 40 30 20 Red 100 1 10 0.1 0 0 20 40 60 80 0 100 Tamb - Ambient Temperature ( °C ) 95 10905 IF - Forward Current ( mA ) Tamb ≤ı 65 ° C t p /T= 0.01 0.02 0.05 100 1 10 0.5 0.2 1 0.01 0.1 0.1 1 10 6 8 10 Red 1.2 0.8 0.4 I F = 10 mA 0 100 Figure 3. Forward Current vs. Pulse Length www.vishay.com 1.6 0 t p - Pulse Length ( ms ) 95 10047 4 V F - Forward Voltage ( V ) Figure 5. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 10000 1000 2 95 10026 Figure 2. Forward Current vs. Ambient Temperature for InGaN 4 t p /T = 0.001 t p = 10 µs 10 95 10027 20 40 60 80 100 Tamb - Ambient Temperature ( °C ) Figure 6. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83005 Rev. 1.3, 31-Aug-04 TLHG / O / P / R / Y420. VISHAY Vishay Semiconductors 100 Soft Orange Red I F - Forward Current ( mA ) I V re l - Relative Luminous Intensity 2.4 2.0 1.6 1.2 0.8 10 1 0.4 0.1 0 0 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 95 10321 95 9990 4 5 2.0 10 Red I v rel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 3 Figure 10. Forward Current vs. Forward Voltage 1 0.1 Soft Orange 1.6 1.2 0.8 0.4 0 0.01 1 10 0 100 I F - Forward Current ( mA ) 95 10029 20 40 60 80 100 Tamb - Ambient Temperature (° C ) 95 9994 Figure 8. Relative Luminous Intensity vs. Forward Current Figure 11. Rel. Luminous Intensity vs. Ambient Temperature 1.2 2.4 Red I V re l - Relative Luminous Intensity I V re l - Relative Luminous Intensity 2 V F - Forward Voltage ( V ) tp /T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 1.0 0.8 0.6 0.4 0.2 0 590 95 10040 1 Soft Orange 2.0 1.6 1.2 0.8 0.4 0 610 630 650 670 690 λ -ı Wavelength ( nm ) Figure 9. Relative Intensity vs. Wavelength Document Number 83005 Rev. 1.3, 31-Aug-04 95 10259 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle www.vishay.com 5 TLHG / O / P / R / Y420. VISHAY 10 I v rel - Relative Luminous Intensity I v rel - Relative Luminous Intensity Vishay Semiconductors Soft Orange 1 0.1 1.6 1.2 0.8 0.4 0 0.01 1 10 100 I F - Forward Current ( mA ) 95 9997 I v rel - Relative Luminous Intensity IVrel - Relative Luminous Intensity Soft Orange 1.0 0.8 0.6 0.4 0.2 610 630 650 t p /T = 0.001 t p = 10 µs 10 1 0.1 0 2 4 6 8 10 V F - Forward Voltage ( V ) 95 10030 Figure 15. Forward Current vs. Forward Voltage www.vishay.com 6 80 100 1.6 1.2 0.8 0.4 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle I v rel - Relative Luminous Intensity I F - Forward Current ( mA ) Yellow 60 Yellow 2.0 0 1000 100 40 Tamb - Ambient Temperature ( °C ) 95 10260 Figure 14. Relative Intensity vs. Wavelength 20 2.4 670 λ - Wavelength ( nm ) 95 10324 0 Figure 16. Rel. Luminous Intensity vs. Ambient Temperature 1.2 590 I F = 10 mA 95 10031 Figure 13. Relative Luminous Intensity vs. Forward Current 0 570 Yellow 10 Yellow 1 0.1 0.01 1 95 10033 10 100 I F - Forward Current ( mA ) Figure 18. Relative Luminous Intensity vs. Forward Current Document Number 83005 Rev. 1.3, 31-Aug-04 TLHG / O / P / R / Y420. VISHAY Vishay Semiconductors 2.4 Yellow 1.0 I v rel - Specific Luminous Intensity IVrel - Relative Luminous Intensity 1.2 0.8 0.6 0.4 0.2 0 550 570 590 610 630 1.2 0.8 0.4 0 95 10263 Figure 19. Relative Intensity vs. Wavelength I v rel - Relative Luminous Intensity Green 100 t p /T = 0.001 t p = 10 µs 10 1 10 1 20 0.5 50 0.2 100 0.1 500 IF(mA) 0.02 tp/T 200 0.05 Figure 22. Specific Luminous Intensity vs. Forward Current 1000 I F - Forward Current ( mA ) 1.6 650 λ - Wavelength ( nm ) 95 10039 Green 2.0 10 Green 1 0.1 0.1 0 2 4 6 8 V F - Forward Voltage ( V ) 95 10034 0.8 95 10035 I F = 10 mA 0 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) Figure 21. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83005 Rev. 1.3, 31-Aug-04 Figure 23. Relative Luminous Intensity vs. Forward Current IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 1.2 0 100 1.2 Green 0.4 10 I F - Forward Current ( mA ) 95 10037 Figure 20. Forward Current vs. Forward Voltage 1.6 1 10 Green 1.0 0.8 0.6 0.4 0.2 0 520 95 10038 540 560 580 600 620 λ - Wavelength ( nm ) Figure 24. Relative Intensity vs. Wavelength www.vishay.com 7 TLHG / O / P / R / Y420. VISHAY Vishay Semiconductors 10 I Vrel - Relative Luminous Intensity 100 I F – Forward Current ( mA ) Pure Green 10 1 0 1 2 3 4 0.1 1 5 V F – Forward Voltage ( V ) 95 9988 10 100 I F - Forward Current ( mA ) 95 9998 Figure 25. Forward Current vs. Forward Voltage Figure 28. Relative Luminous Intensity vs. Forward Current 1.2 2.0 Pure Green I Vrel - Relative Luminous Intensity I Vrel - Relative Luminous Intensity 1 0.01 0.1 1.6 1.2 0.8 0.4 0 Pure Green 0 20 40 60 80 100 Tamb − Ambient Temperature ( °C ) 95 9991 0.8 0.6 0.4 0.2 0 500 95 10325 Figure 26. Rel. Luminous Intensity vs. Ambient Temperature Pure Green 1.0 520 540 560 580 600 λ - Wavelength ( nm ) Figure 29. Relative Intensity vs. Wavelength 2.4 I Spec - Specific Luninous Flux Pure Green 2.0 1.6 1.2 0.8 0.4 0 10 95 10261 100 1000 I F - Forward Current ( mA ) Figure 27. Specific Luminous Intensity vs. Forward Current www.vishay.com 8 Document Number 83005 Rev. 1.3, 31-Aug-04 VISHAY TLHG / O / P / R / Y420. Vishay Semiconductors Package Dimensions in mm 95 10913 Document Number 83005 Rev. 1.3, 31-Aug-04 www.vishay.com 9 TLHG / O / P / R / Y420. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83005 Rev. 1.3, 31-Aug-04