AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain • Integrated Temp Sense Diode 30V 20A ID (at VGS=10V) Application RDS(ON) (at VGS=10V) < 4.4mΩ RDS(ON) (at VGS=4.5V) < 6.5mΩ Typical ESD protection HBM Class 3A 100% UIS Tested 100% Rg Tested • Battery Management DFN5X6B Top View Bottom View T2 S2 S2 D1 G2 D2 D1/D2 S1 T1 G1 G1 G2 S1 S1 PIN1 S2 PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current G V A 80 20 IDSM TA=70°C ±20 20 IDM TA=25°C Units V 20 ID TC=100°C Maximum 30 A 20 Avalanche Current C IAS 40 A Avalanche energy L=0.05mH C EAS 40 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2.0: January 2016 4.1 Steady-State Steady-State RθJA RθJC W 2.6 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 -55 to 150 Typ 24 53 3 www.aosmd.com °C Max 30 64 4 Units °C/W °C/W °C/W Page 1 of 7 AON6810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 1 TJ=125°C µA 5 1.4 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A 1.8 ±10 µA 2.2 V 3.6 4.4 4.8 5.8 5.2 6.5 mΩ V gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V 0.68 1 IF=50µA 0.72 0.78 IF=50µA 0.72 0.78 VFD1 VFD2 IS Sense Diode Forward Voltage 83 Maximum Body-Diode Continuous Current G Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz mΩ S 20 DYNAMIC PARAMETERS Ciss Input Capacitance Units V VDS=30V, VGS=0V IDSS Max V A 1720 pF 746 pF 61 pF 5.2 7.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 24 34 nC Qg(4.5V) Total Gate Charge 11 20 Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 2.6 nC 5.9 nC Qgd Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 5.8 ns tr Turn-On Rise Time 3.5 ns tD(off) Turn-Off DelayTime 57.5 ns tf Turn-Off Fall Time 70 ns ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 30 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: January 2016 www.aosmd.com Page 2 of 7 AON6810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 4.5V 5V 80 4V 80 3.5V 10V 60 ID(A) ID (A) 60 125°C 40 40 20 20 25°C VGS=3V 0 0 0 1 2 3 4 0 5 7 2 3 4 5 6 Normalized On-Resistance 1.6 6 RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 5 4 3 VGS=10V VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 10 1.0E+02 ID=20A 1.0E+01 8 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 125°C 6 4 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.2.0: January 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON6810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=15V ID=20A 8 2000 Capacitance (pF) VGS (Volts) Ciss 6 4 2 1500 Coss 1000 500 Crss 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 10µs 100µs 1ms 10ms DC 1.0 TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 400 10µs RDS(ON) limited Power (W) ID (Amps) 15 500 100.0 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 5 300 200 100 0.1 1 10 100 0 0.0001 VDS (Volts) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: January 2016 www.aosmd.com Page 4 of 7 AON6810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1 1000 0.8 800 IF(µA) at 25℃ IF=50µA IF(µA) VF (V) 0.6 0.4 600 400 0.2 200 0 0 -50 -25 0 25 50 75 100 125 150 175 0 0.4 0.6 0.8 1 1.2 1.4 VF(V) Figure 13: Sense Diode Forward Voltage TJ - Junction Temperature(℃) Figure 12: Sense Diode Forward Voltage vs. Temperature 40 25 20 30 Current rating ID(A) Power Dissipation (W) 0.2 20 10 15 10 5 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 14: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 15: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 16: Single Pulse Power Rating Junction-to-Ambient (Note H) Rev.2.0: January 2016 www.aosmd.com Page 5 of 7 AON6810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=64°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: January 2016 www.aosmd.com Page 6 of 7 AON6810 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: January 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7