UNISONIC TECHNOLOGIES CO., LTD UD9930 Power MOSFET DUAL N & P-CHANNEL POWER MOSFET DESCRIPTION The UTC UD9930 is a dual N & P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed, low gate chare. The UTC UD9930 is suitable for DC/DC converters and LCD monitor inverter. FEATURES * N-channel: RDS(on) < 40 mΩ @ VGS=10V, ID=5A * P-channel: RDS(on) < 60 mΩ @ VGS=-10V, ID=-4A * High switching speed * Low gate chare SYMBOL ORDERING INFORMATION Ordering Number Package UD9930G-S08-R SOP-8 1 2 3 Pin Assignment 4 5 6 7 8 Packing N1G N1D/P1D N1S/N2S N2G P2G N2D/P2D P1S/P2S P1G Tape Reel www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R211-030.A UD9930 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R211-030.A UD9930 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RATINGS UNIT N-CHANNEL P-CHANNEL Drain to Source Voltage VDSS 30 -30 V Gate to Source Voltage VGSS ±25 ±25 TA=25°C 5.5 -4.1 ID Drain Current (Note 3) Continuous A TA=70°C 4.4 -3.3 Drain Current (Note 1) Pulsed IDM 20 -20 Total Power Dissipation @TA=25°C PD 1.38 W Linear Derating Factor 0.01 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 3) SYMBOL SYMBOL θJA RATINGS 90 UNIT °C/W N-CHANNEL ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250µA Breakdown Voltage Temperature ∆BVDSS/∆TJ Reference to 25°C, ID=1mA Coefficient Drain-Source Leakage Current IDSS VDS=30V, VGS=0 V, TJ=25°C Gate-Source Leakage Forward VGS=25V, VDS=0V IGSS Current Reverse VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-state Resistance VGS=10V, ID=5A RDS(ON) (Note 2) VGS=4.5V, ID=3A Forward Transconductance gFS VDS=10V, ID=5A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0 V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VDS=15V, VGS=4.5V, ID=5A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) VDS=15V, ID=1A,VGS=10V, Rise Time tR RG=6Ω, RD=15Ω, Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1.2A, VGS=0V (Note 2) Body Diode Reverse Recovery Time tRR IS=1.7A, VGS=0V, dIF/dt=100A/μs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 30 UNIT V 0.04 V/°C 1 +100 -100 µA nA nA 3.0 40 60 5.2 V mΩ mΩ S 540 185 95 pF pF pF 36 8 10 26 52 176 80 nC nC nC ns ns ns ns 1.0 1.2 450 500 V ns nC 3 of 5 QW-R211-030.A UD9930 Power MOSFET P-CHANNEL ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=-250µA -30 V Breakdown Voltage Temperature ∆BVDSS/∆TJ Reference to 25°C, ID=-1mA -0.04 V/°C Coefficient Drain-Source Leakage Current IDSS VDS=-30V, VGS=0 V, TJ=25°C -1 µA Gate-Source Leakage Forward VGS=25V, VDS=0V +100 nA IGSS Current VGS=-25V, VDS=0V Reverse -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA -1.0 -3.0 V Drain-Source On-state Resistance VGS=-10V, ID=-4A 60 mΩ RDS(ON) (Note 2) VGS=-4.5V, ID=-2A 100 mΩ Forward Transconductance gFS VDS=-10V, ID=-5A 4.8 S DYNAMIC PARAMETERS Input Capacitance CISS 750 pF VDS=-25V, VGS=0 V, f=1.0MHz Output Capacitance COSS 720 pF 360 pF Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG 37 nC VDS=-15V, VGS=-4.5V, ID=-5A Gate to Source Charge QGS 11 nC 12 nC Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) 36 ns Rise Time tR 75 ns VDS=-15V, ID=-1A,VGS=-10V, RG=6Ω, RD=15Ω, Turn-OFF Delay Time tD(OFF) 176 ns Fall-Time tF 88 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-1.2A, VGS=0V -1.2 V (Note 2) Body Diode Reverse Recovery Time tRR 255 ns IS=-1.7A, VGS=0V, Body Diode Reverse Recovery dIF/dt =-100A/μs QRR 280 nC Charge Notes: 1. Pulse width limited by Max. Junction temperature 2. Pulse width ≤300us, duty cycle ≤2% 3. Surface mounted on 1 in 2 copper pad of FR4 board, t ≤10sec; 186℃/W when mounted on Min. copper pad UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R211-030.A UD9930 Power MOSFET TEST CIRCUITS AND WAVEFORMS N-Channel P-Channel UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R211-030.A